HUASHUO-HSS2319
| Part # | HUASHUO-HSS2319 |
Download  | HUASHUO-HSS2319 |
HSS2319
P-Ch 40V Fast Switching MOSFETs
Product Summary
Description
V
DS
-40
70
V
The HSS2319 is the high cell density trenched P-
ch MOSFE
T
s
, which provides excellent RDSON
and efficiency for most of the small power switching
and load switch applications.
R
DS(ON),max
m
Ω
A
I
D
-3.2
The HSS2919 meet the RoHS and Green Product
requirement with full function reliability approved.
SOT 23 Pin Configuration
⚫
⚫
⚫
⚫
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Rating
Symbol
Parameter
Units
10s
Steady State
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
-40
V
V
±
20
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ -4.5V
1
Continuous Drain Current, V
GS
@ -4.5V
1
Pulsed Drain Current
2
-3.7
-3.0
-3.2
-2.6
A
A
-16.1
A
P
D
@T
A
=25
℃
P
D
@T
A
=70
℃
T
STG
Total Power Dissipation
3
1.32
0.84
1
W
W
℃
℃
Total Power Dissipation
3
0.64
Storage
T
e
mperature Range
-55 to 150
T
J
Operating Junction Temperature Range
-55 to 150
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
Unit
℃
/W
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Ambient
1
(t
≤
10s)
Thermal Resistance Junction-Case
1
125
95
R
θ
JA
—
R
θ
JC
—
80
1
V
e
r 2.0
HSS2319
P-Ch 40V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-40
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-4.5V , I
D
=-3A
-0.018
—
—
V/
℃
—
70
100
-2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=-2.5V , I
D
=-2A
—
—
V
GS(th)
Gate Threshold Voltage
-1.0
—
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
2.5
—
mV/
℃
V
DS
=-24V , V
GS
=0V , T
J
=25
℃
V
DS
=-24V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
—
-1
I
DSS
Drain-Source Leakage Current
uA
—
—
-5
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
—
—
±
100
—
nA
S
V
DS
=-5V , I
D
=-3A
—
5.8
6.4
2.1
2.5
4.2
23
Q
g
—
—
V
DS
=-32V , V
GS
=-4.5V , I
D
=-3A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
—
Turn-On Delay Time
Rise Time
—
—
V
DD
=-20V , V
GS
=-4.5V ,
—
—
ns
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
R
G
=3.3
, I
D
=-3A
—
26.8
20.6
620
65
—
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
—
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
—
53
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
-3.2
-16.1
-1
Unit
A
I
S
Continuous Source Current
1,4
Pulsed Source Current
2,4
Diode Forward Voltage
2
I
SM
V
SD
—
—
A
—
—
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
HSS2319
P-Ch 40V Fast Switching MOSFETs
Typical Characteristics
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
Fig.4 Gate-Charge Characteristics
Fig.3 Forward Characteristics Of Reverse
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3
V
e
r 2.0
HSS2319
P-Ch 40V Fast Switching MOSFETs
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
0.1
DUTY=0.5
0.2
0.1
0.05
0.02
0.01
0.01
P
DM
T
ON
0.001 SINGLE
PULSE
T
D = T
ON
/T
T
Jpeak
= T
C
+
P
D
M
x R
θJC
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
V
e
r 2.0
HSS2319
P-Ch 40V Fast Switching MOSFETs
Ordering Information
Part Number
Package code
Packaging
HSS2319
SO
T
-23L
3000/Tape&Reel
5
V
e
r 2.0
