HUASHUO-HSS3400A
| Part # | HUASHUO-HSS3400A |
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HSS3400A
Description
Product Summary
V
DS
30
26
5.5
V
The HSS3400A is the high cell density trenched N-
ch MOSFE
T
s
, which provides excellent RDSON
and efficiency for most of the small power switching
and load switch applications.
R
DS(ON),max
I
D
mΩ
A
The HSS3400A meet the RoHS and Green Product
requirement with full function reliability approved.
l
Green Device Available
l
Super Low Gate Charge
l
Excellent Cdv/dt effect decline
l
Advanced high cell density Trench
technology
SOT23 Pin Configuration
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
30
Units
V
Drain-Source Voltage
V
GS
±
12
V
Gate-Sou
r
ce Voltage
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 4.5V
1
Continuous Drain Current, V
GS
@ 4.5V
1
Pulsed Drain Current
2
5.5
4.5
A
A
22
A
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
3
1.0
W
℃
℃
Storage
T
e
mperature Range
-55 to 150
-55 to 150
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
R
θJA
Parameter
Typ.
—
Max.
100
80
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
R
θJC
—
1
V
e
r 2.0
HSS3400A
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
30
—
—
—
—
0.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=5.9A
V
GS
=4.5V , I
D
=5A
0.029
19
—
V/
℃
26
31
48
1.4
—
R
DS(ON)
Static Drain-Source On-Resistance
2
23
m
Ω
V
GS
=2.5V , I
D
=4A
38
V
GS(th)
Gate Threshold Voltage
0.9
-2.82
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=24V , V
GS
=0V , T
J
=25
℃
V
DS
=24V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
12V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=5V , I
D
=3A
19
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
1.5
3.74
0.62
1.82
6.5
2
3
Ω
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
V
DS
=15V , V
GS
=4.5V , I
D
=3A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
V
DD
=15V , V
GS
=4.5V , R
G
=3.3
Ω
—
I
D
=3A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
28.6
2.6
614
78
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
61
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
5.5
22
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,4
Pulsed Source Current
2,4
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
—
—
A
—
—
1.2
—
V
—
6.8
2.3
nS
nC
I
F
=3A , dI/dt=100A/µs , T
J
=25
℃
Q
rr
—
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
HSS3400A
Ordering Information
Part Number
Package code
Packaging
3000/Tape&Reel
HSS3400A
SO
T
–
23
5
V
e
r 2.0
