HUASHUO-HSU0004
| Part # | HUASHUO-HSU0004 |
Download  | HUASHUO-HSU0004 |
HSU0004
N-Ch 100V Fast Switching MOSFETs
Description
Product Summary
V
DS
100
V
The HSU0004 is the highest performance trench
N-ch MOSFE
T
s
w
ith extreme high cell density,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
R
DS(ON),max
I
D
112 mΩ
12
A
The HSU0004 meet the RoHS and Green Product
requirement, 100% EAS guaranteed with full
function reliability approved.
TO252 Pin Configuration
l
l
l
l
Super Low Gate Charge
Green Device Available
Excellent Cdv/dt effect decline
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
100
Units
V
Drain-Source Voltage
V
GS
±
20
V
Gate-Sou
r
ce Voltage
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
12
A
7.7
A
3
A
2.4
24
A
A
EAS
Single Pulse Avalanche Energy
3
6.1
mJ
A
I
AS
Avalanche Current
11
P
D
@T
C
=25
℃
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
3
Total Power Dissipation
3
34.7
W
W
℃
℃
2
Storage
T
e
mperature Range
-55 to 150
-55 to 150
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
R
θJA
Parameter
Typ.
—
Max.
62
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
R
θJC
—
3.6
1
V
e
r 2.0
HSU0004
N-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
100
—
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=10A
0.098
—
—
V/
℃
m
Ω
m
Ω
V
112
120
2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=4.5V , I
D
=8A
—
V
GS(th)
Gate Threshold Voltage
—
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
-4.57
—
mV/
℃
V
DS
=80V , V
GS
=0V , T
J
=25
℃
V
DS
=80V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=5V , I
D
=10A
13
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
2
—
Ω
Q
g
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
26.2
4.6
5.1
4.2
8.2
35.6
9.6
1535
60
—
V
DS
=80V , V
GS
=10V , I
D
=10A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
V
DD
=50V , V
GS
=10V , R
G
=3.3
Ω
—
I
D
=10A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
37
—
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
12
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
—
—
24
A
V
GS
=0V , I
S
=1A , T
J
=25
℃
I
F
=10A , dI/dt=100A/µs ,
T
J
=25
℃
—
—
1.2
—
V
—
37
nS
nC
Q
rr
—
27.3
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=11A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
HSU0004
N-Ch 100V Fast Switching MOSFETs
Typical Characteristics
25
V
GS
=10V
V
GS
=7V
V
GS
=5V
20
15
10
5
V
GS
=4.5V
V
GS
=3V
0
0
2
4
6
V
DS
, Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
10
8
6
T
J
=150
℃
T
J
=25
℃
4
2
0
0.00
0.25
0.50
0.75
1.00
V
SD
, Source-to-Drain Voltage (V)
Fig.4 Gate-Charge Characteristics
Fig.3 Forward Characteristics Of Reverse
2.5
2.0
1.5
1.0
0.5
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T ,Junction
Temperature (
)
T ,
Junction Temperature (
)
℃
℃
J
J
Fig.6 Normalized R
DSON
vs. T
J
Fig.5 Normalized V
GS(th)
vs. T
J
3
V
e
r 2.0
HSU0004
N-Ch 100V Fast Switching MOSFETs
10000
1000
100
100.00
10.00
1.00
F=1.0MHz
Ciss
10us
100us
1ms
10ms
100ms
DC
Coss
Crss
21
0.10
T
C
=25
℃
Single Pulse
10
0.01
1
5
9
13
17
25
0.1
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
V
DS
(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
P
DM
T
ON
T
SINGLE
D =
T
ON
/T
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching
4
V
e
r 2.0
