HUASHUO-HSU0107
| Part # | HUASHUO-HSU0107 |
Download  | HUASHUO-HSU0107 |
HSU0107
P-Ch 100V Fast Switching MOSFETs
Product Summary
Description
The HSU0107 is the high cell density trenched P-
ch MOSFE
T
s
, which provides excellent RDSON
and efficiency for most of the small power
switching and load switch applications.
The HSU0107 meets the RoHS and Green
Product requirement with full function reliability
approved.
V
DS
-100 V
R
DS(ON),max
650
m
Ω
I
D
-4.1
A
TO252 Pin Configuration
⚫
Super Low Gate Charge
⚫
Excellent Cdv/dt effect decline
⚫
Green Device Available
⚫
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
-100
Units
V
Drain-Source Voltage
V
GS
±
20
V
Gate-Sou
r
ce Voltage
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Pulsed Drain Current
2
-4.1
A
-2.6
A
-8.2
A
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
3
2
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
Max.
62
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
—
—
R
θ
JC
6
V
e
r 2.0
1
HSU0107
P-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-100
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-1A
-0.0624
0.52
0.56
-1.5
4.5
—
—
V/
℃
—
0.65
0.7
-2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=-4.5V , I
D
=-0.5A
—
V
GS(th)
Gate Threshold Voltage
-1.0
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=-80V , V
GS
=0V , T
J
=25
℃
V
DS
=-80V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
—
10
I
DSS
Drain-Source Leakage Current
uA
—
—
100
±
100
—
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
—
nA
S
V
DS
=-5V , I
D
=-1A
—
3
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
—
16
32
Q
g
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
4.5
1.14
1.5
13.6
6.8
34
—
V
DS
=-15V , V
GS
=-4.5V , I
D
=-1A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
—
—
—
V
DD
=-50V , V
GS
=-10V , R
G
=3.3
—
—
I
D
=-1A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
—
3
—
C
iss
C
oss
C
rss
Input Capacitance
—
553
29
—
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
—
20
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
-4.1
-8.2
-1.2
Unit
A
I
S
Continuous Source Current
1,4
Pulsed Source Current
2,4
Diode Forward Voltage
2
I
SM
V
SD
—
—
A
—
—
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
V
e
r 2.0
2
HSU0107
P-Ch 100V Fast Switching MOSFETs
Typical Characteristics
550
540
530
520
510
500
1.2
I
D
=0.5A
V
GS
=-10V
0.9
0.6
0.3
0.0
V
GS
=-7V
V
GS
=-5V
V
GS
=-4.5V
V
GS
=-3V
2
4
6
8
10
0
0.25
0.5
0.75
1
-V
DS
,Drain-to-Source Voltage (V)
-V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. Gate-Source
1.5
10
7.5
5
V
DS
=-20V
I
D
=-0.5A
1
T
J
=150
℃
T
J
=25
℃
0.5
2.5
0
0
0.00
0.25
0.50
0.75
1.00
0
2.5
5
7.5
10
-V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
2.0
1.5
1.0
0.5
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
V
e
r 2.0
3
HSU0107
P-Ch 100V Fast Switching MOSFETs
1000
100
10
10.00
1.00
0.10
0.01
0.00
F=1.0MHz
Ciss
1ms
100ms
1s
10S
DC
Coss
T
A
=25
℃
Crss
Single Pulse
1
5
9
13
17
21
25
0.1
1
10
-V
DS
(V)
100
1000
-V
DS
,Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
P
DM
T
ON
0.001 SINGLE
PULSE
T
D = T
ON
/T
T
Jpeak
= T
C
+
P
D
M
x R
θJC
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
V
DS
90%
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
V
e
r 2.0
4
HSU0107
P-Ch 100V Fast Switching MOSFETs
Ordering Information
Part Number
Package code
Packaging
HSU0107
TO-252
2500/Tape&Reel
V
e
r 2.0
5
