HUASHUO-HSU100P03
| Part # | HUASHUO-HSU100P03 |
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HSU100P03
P-Ch 30V Fast Switching MOSFETs
Product Summary
Description
V
DS
-30
4
V
The HSU100P03 is the high cell density trenched
P-ch MOSFE
T
s
, which provide excellent RDSON
and gate charge for most of the synchronous buck
converter applications.
R
DS(ON),typ
m
Ω
I
D
-100 A
The HSU100P03 meet the RoHS and Green
Product requirement, 100% EAS guaranteed with
full function reliability approved.
TO252 Pin Configuration
⚫
Super Low Gate Charge
100% EAS Guaranteed
Green Device Available
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
⚫
⚫
⚫
⚫
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
-30
Units
Drain-Source Voltage
V
V
V
GS
±
20
Gate-Sou
r
ce Voltage
I
D
@T
C
=25
℃
Continuous Drain Current, V
GS
@ -10V
1,6
Continuous Drain Current, V
GS
@ -10V
1,6
Pulsed Drain Current
2
-100
-65
A
I
D
@T
C
=100
℃
A
I
DM
-400
A
EAS
Single Pulse Avalanche Energy
3
Avalanche Current
210
mJ
A
I
AS
P
D
@T
C
=25
℃
T
STG
-30
Total Power Dissipation
4
105
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 175
-55 to 175
T
J
Thermal Data
Symbol
Parameter
Typ.
—
Max.
20
Unit
℃
/W
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
(t
≦
10S)
R
θ
JA
R
θ
JC
Thermal Resistance Junction-ambient
1
(Steady State)
Thermal Resistance Junction-case
1
—
50
—
1.45
1
V
e
r 2.0
HSU100P03
P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-30
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=-10V , I
D
=-20A
4
5.3
8.2
-2.5
-1
m
m
V
R
DS(ON)
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS
=-4.5V , I
D
=-15A
—
5.7
—
V
GS(th)
I
DSS
V
GS
=V
DS
, I
D
=-250uA
V
DS
=-24V , V
GS
=0V , T
J
=25
℃
V
DS
=-24V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
-1.0
—
—
Drain-Source Leakage Current
uA
nA
—
—
-5
I
GSS
Q
g
Gate-Source Leakage Current
Total Gate Charge (-10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
—
±
100
—
—
45
9
V
DS
=-15V , V
GS
=-10V , I
D
=-30A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
12
17
19
68
23
9300
989
700
—
—
—
V
DD
=-15V , V
GS
=-10V , R
G
=3.3
,
—
—
ns
I
D
=-30A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
—
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
-100
-1.2
Unit
A
I
S
Continuous Source Current
1,5
Diode Forward Voltage
2
V
SD
—
—
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-15V,V
GS
=-10V,L=0.5mH,Rg=25R,I
AS
=-30A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation
6.The maximum current rating is package limited.
2
V
e
r 2.0
HSU100P03
P-Ch 30V Fast Switching MOSFETs
Ordering Information
Part Number
Package code
Packaging
HSU100P03
TO252-2
2500/Tape&Reel
5
V
e
r 2.0
