HUASHUO-HSU150N03
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HSU150N03
N-Ch 30V Fast Switching MOSFETs
Product Summary
Description
The HSU150N03 is the high cell density trenched
N-ch MOSFE
T
s
, which provide excellent RDSON
and gate charge for most of the synchronous
buck converter applications.
V
DS
30
V
R
DS(ON),typ
2.4
150
m
Ω
A
I
D
The HSU150N03 meet the RoHS and Green
Product requirement, 100% EAS guaranteed with
full function reliability approved.
TO252 Pin Configuration
⚫
⚫
⚫
⚫
⚫
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
30
Units
V
Drain-Source Voltage
V
GS
±
20
V
Gate-Sou
r
ce Voltage
I
D
@T
C
=25
℃
Continuous Drain Current, V
GS
@ 10V
1,6
Continuous Drain Current, V
GS
@ 10V
1,6
Pulsed Drain Current
2
150
95
A
I
D
@T
C
=100
℃
A
I
DM
590
A
EAS
Single Pulse Avalanche Energy
3
Avalanche Current
226
mJ
A
I
AS
P
D
@T
C
=25
℃
T
STG
30
Total Power Dissipation
4
60
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
62
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
1.4
1
V
e
r 2.0
HSU150N03
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
30
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
BV
DSS
Drain-Source Breakdown Voltage
V
V
GS
=10V , I
D
=30A
2.4
4.4
—
3.2
6.5
2.5
1
R
DS(ON)
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
m
V
V
GS
=4.5V , I
D
=20A
V
GS(th)
I
DSS
V
GS
=V
DS
, I
D
=250uA
V
DS
=24V , V
GS
=0V , T
J
=25
℃
V
DS
=24V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
—
Drain-Source Leakage Current
uA
nA
—
5
I
GSS
Q
g
Gate-Source Leakage Current
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
±
100
—
39
V
DS
=15V , V
GS
=10V , I
D
=30A
nC
Q
gs
Q
gd
T
d(on)
T
r
10
—
12
—
20.1
23
—
V
DD
=15V , V
GS
=10V , R
G
=3.3
,
—
ns
I
D
=30A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
99
—
37
—
C
iss
C
oss
C
rss
Input Capacitance
3500
480
410
—
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
150
1.2
—
Unit
A
I
S
Continuous Source Current
1,6
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
SD
trr
—
—
V
—
44
ns
nC
If=20A,di/dt=100A/us
Qrr
—
37
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=15V,V
GS
=10V,L=0.5mH,I
AS
=30A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
6.The maximum current rating is package limited.
2
V
e
r 2.0
HSU150N03
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
12
10
8
V
DS
=15V
I
D
=15A
10
8
6
6
T
J
=150
℃
T
J
=25
℃
4
4
2
0
2
0
0
40
80
120
0.2
0.4
0.6
0.8
1
V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Source Drain Forward Characteristics
Fig.4 Gate-Charge Characteristics
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
3
V
e
r 2.0
HSU150N03
N-Ch 30V Fast Switching MOSFETs
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
T
ON
SINGLE
0.01
0.001
T
D =
T
ON
/T
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.11 Unclamped Inductive Switching
Fig.10 Switching Time Waveform
4
V
e
r 2.0
HSU150N03
N-Ch 30V Fast Switching MOSFETs
TO252 Package Outline Dimensions
MILLIMETERS
MILLIMETERS
SYMBOL
SYMBOL
MIN
2.20
0.00
0.97
0.72
5.23
0.47
6.00
NOM
2.30
MAX
MIN
9.90
1.40
NOM
MAX
A
A1
A2
b
2.38
0.10
1.17
0.85
5.46
0.58
6.20
H
L
10.10 10.30
—
1.50
2.90REF
0.51BSC
—
1.70
1.07
L1
L2
L3
L4
L5
Ɵ
0.78
b3
c
5.33
0.53
0.90
0.60
1.70
0°
1.25
1.00
1.90
8°
0.80
D
6.10
1.80
D1
E
5.30REF
6.60
—
6.50
4.70
6.70
4.92
Ɵ1
Ɵ2
K
5°
7°
9°
E1
e
4.83
5°
7°
9°
2.286BSC
0.40REF
5
V
e
r 2.0
