HUASHUO-HSU15P15
| Part # | HUASHUO-HSU15P15 |
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HSU15P15
P-Ch 150V Fast Switching MOSFETs
Product Summary
Description
The HSU15P15 uses advanced trench MOSFET
technology to provide excellent R
DS(ON)
and gate
charge for use in a wide variety of other
applications.
V
DS
-150 V
R
DS(ON),Max
I
D
338
m
Ω
-15
A
The HSU15P15 meet the RoHS and Green Product
requirement, 100% EAS guaranteed with full
function reliability approved.
TO252 Pin Configuration
⚫
100% EAS Guaranteed
⚫
Green Device Available
⚫
Super Low Gate Charge
⚫
Excellent CdV/dt effect decline
⚫
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
-150
Units
V
Drain-Source Voltage
V
GS
±
20
V
Gate-Sou
r
ce Voltage
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Pulsed Drain Current
2
-15
-9
A
A
-43
A
EAS
Single Pulse Avalanche Energy
3
Total Power Dissipation
4
230
mJ
W
℃
℃
P
D
@T
C
=25
℃
T
STG
90
Storage
T
e
mperature Range
-55 to 150
-55 to 150
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
62
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
2.8
V
e
r 2.0
1
HSU15P15
P-Ch 150V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
I
DSS
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Total Gate Charge
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-150
—
Typ.
—
Max.
—
Unit
V
V
GS
=-10V , I
D
=-5A
270
-3
338
-4
m
V
V
GS
=V
DS
, I
D
=-250uA
V
DS
=-150V , V
GS
=0V , T
J
=25
℃
-2
—
—
-1
uA
nA
V
GS
=
±
20V , V
DS
=0V
I
GSS
—
—
±
100
—
Q
g
—
40
V
DS
=-75V , V
GS
=-10V , I
D
=-3A
nC
Q
gs
Gate-Source Charge
—
5.9
9.2
25
—
Q
gd
Gate-Drain Charge
—
—
T
d(on)
T
r
Turn-On Delay Time
—
—
V
DD
=-75V , V
GS
=-10V , R
G
=3.3
,
Rise Time
—
100
39
—
ns
I
D
=-3A
T
d(off)
T
f
Turn-Off Delay Time
—
—
Fall Time
—
40
—
C
iss
Input Capacitance
—
1990
38
—
V
DS
=-50V , V
GS
=0V , f=1MHz
pF
C
oss
C
rss
Output Capacitance
—
—
Reverse Transfer Capacitance
—
31.5
—
Diode Characteristics
Symbol
Parameter
Diode Forward Voltage
2
Conditions
Min.
Typ.
Max.
Unit
V
SD
V
GS
=0V , I
S
=-1A , T
J
=25
℃
—
—
-1.2
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
V
e
r 2.0
2
HSU15P15
P-Ch 150V Fast Switching MOSFETs
Ordering Information
Part Number
Package code
Packaging
HSU15P15
TO252-2
2500/Tape&Reel
V
e
r 2.0
5
