HUASHUO-HSU5N20
| Part # | HUASHUO-HSU5N20 |
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HSU5N20
N-Ch 200V Fast Switching MOSFETs
Description
Product Summary
The HSU5N20 is the high cell density
trenched N-ch MOSFE
T
s
, which provides
excellent RDSON and efficiency for most of
the small power switching and load switch
applications.
V
DS
200
0.5
5
V
Ω
A
R
DS(ON),typ
I
D
The HSU5N20 meets the RoHS and Green
Product requirement with full function
reliability approved.
TO-252 Pin Configuration
⚫
Green Device Available
⚫
Super Low Gate Charge
⚫
Excellent Cdv/dt effect decline
⚫
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
200
Units
V
Drain-Source Voltage
V
GS
±
20
V
Gate-Sou
r
ce Voltage
I
D
@T
C
=25
℃
I
D
@T
C
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
5
A
3
8
A
A
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
3
2.7
W
℃
℃
Storage
T
e
mperature Range
-55 to 150
-55 to 150
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
55
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
2
V
e
r 2.0
1
HSU5N20
N-Ch 200V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
200
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=10V , I
D
=1A
0.5
0.53
2
0.8
0.9
3
R
DS(ON)
V
GS(th)
I
DSS
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS
=4.5V , I
D
=1A
—
V
GS
=V
DS
, I
D
=250uA
1.2
—
V
V
DS
=200V , V
GS
=0V , T
J
=25
℃
V
DS
=200V , V
GS
=0V , T
J
=55
℃
—
1
Drain-Source Leakage Current
uA
—
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
—
±
100
—
nA
S
V
DS
=10V , I
D
=1A
—
10
Q
g
—
15
—
V
DS
=160V , V
GS
=10V , I
D
=1A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
2.9
5
—
—
—
—
22
—
V
DD
=100V , V
GS
=10V , R
G
=3
—
30
—
ns
I
D
=1A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
44
—
—
12
—
C
iss
C
oss
C
rss
Input Capacitance
—
900
125
4.5
—
V
DS
=25V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
5
Unit
A
I
S
V
SD
t
rr
Continuous Source Current
1,4
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
—
—
1
V
—
85
—
—
nS
nC
I
F
=1A , dI/dt=100A/µs , T
J
=25
℃
Q
rr
—
250
Note:
1. The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3. The power dissipation is limited by 150
℃
junction temperature
4. The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
V
e
r 2.0
2
HSU5N20
N-Ch 200V Fast Switching MOSFETs
Typical Characteristics
Fig.2 On-Resistance vs G-S Voltage
Fig.1 Typical Output Characteristics
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
Fig.5 V
GS(th)
vs T
J
Fig.6 Normalized R
DSON
vs T
J
V
e
r 2.0
3
HSU5N20
N-Ch 200V Fast Switching MOSFETs
Fig.7 Capacitance
Fig.8 Safe Operating Area
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
V
e
r 2.0
4
HSU5N20
N-Ch 200V Fast Switching MOSFETs
Ordering Information
Part Number
Package code
Packaging
HSU5N20
TO-252
2500/Tape&Reel
V
e
r 2.0
6
