HUASHUO-HSU6006
| Part # | HUASHUO-HSU6006 |
Download  | HUASHUO-HSU6006 |
HSU6006
N-Ch 60V Fast Switching MOSFETs
Description
Product Summary
V
DS
60
20
35
V
The HSU6006 is the high cell density trenched
N-ch MOSFE
T
s
, which provide excellent
RDSON and gate charge for most of the
synchronous buck converter applications.
The HSU6006 meet the RoHS and Green
Product requirement, 100% EAS guaranteed
with full function reliability approved.
R
DS(ON),max
m
Ω
A
I
D
⚫
Super Low Gate Charge
⚫
100% EAS Guaranteed
⚫
Excellent CdV/dt effect decline
⚫
Green Device Available
⚫
Advanced high cell density Trench
technology
TO252 Pin Configuration
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
60
Units
V
Drain-Source Voltage
Gate-Sou
r
ce Voltage
V
GS
±
20
V
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
35
A
22
A
7.4
A
6
A
80
39.2
A
EAS
Single Pulse Avalanche Energy
3
Avalanche Current
mJ
A
I
AS
28
P
D
@T
C
=25
℃
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
4
45
W
W
℃
℃
Total Power Dissipation
4
2
Storage
T
e
mperature Range
-55 to 150
-55 to 150
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
62
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
2.8
1
V
e
r 2.0
HSU6006
N-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
60
—
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=20A
0.057
—
—
V/
℃
20
24
2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
V
GS
=4.5V , I
D
=10A
—
V
GS(th)
Gate Threshold Voltage
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
-5.68
—
mV/
℃
V
DS
=48V , V
GS
=0V , T
J
=25
℃
V
DS
=48V , V
GS
=0V , T
J
=55
℃
V
GS
=
±
20V , V
DS
=0V
1
I
DSS
Drain-Source Leakage Current
uA
—
5
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=5V , I
D
=15A
45
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
1.7
19.3
7.1
7.6
7.2
50
—
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
V
DS
=48V , V
GS
=4.5V , I
D
=15A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
V
DD
=30V , V
GS
=10V , R
G
=3.3
,
—
I
D
=15A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
36.4
7.6
2423
145
97
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
35
80
1
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
—
—
A
V
GS
=0V , I
S
=A , T
J
=25
℃
I
F
=15A , dI/dt=100A/µs ,
T
J
=25
℃
—
—
V
—
16.3
11
—
nS
nC
Q
rr
—
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=28A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
HSU6006
N-Ch 60V Fast Switching MOSFETs
Typical Characteristics
20
19
18
17
16
15
I
D
=12A
4
6
8
10
V
GS
(V)
Fig.2 On-Resistance v.s Gate-Source
Fig.1 Typical Output Characteristics
12
10
8
6
T
J
=150
℃
T
J
=25
℃
4
2
0
0.2
0.4
0.6
0.8
1
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.0
1.5
1.5
1.0
0.5
1
0.5
0
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
v.s T
J
Fig.6 Normalized R
DSON
v.s T
J
3
V
e
r 2.0
HSU6006
N-Ch 60V Fast Switching MOSFETs
10000
1000
100
F=1.0MHz
Ciss
Coss
Crss
10
1
5
9
13
17
21
25
V
DS
Drain to Source Voltage(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.3
0.1
0.1
0.05
0.02
P
DM
T
ON
T
0.01
D = T
ON
/T
S
I
NGLE PULSE
T
J
peak = T
C
+ P
DM
x R
θJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.11 Unclamped Inductive Switching
Fig.10 Switching Time Waveform
4
V
e
r 2.0
HSU6006
N-Ch 60V Fast Switching MOSFETs
Ordering Information
Part Number
Package code
Packaging
HSU6006
TO252-2
2500/Tape&Reel
5
V
e
r 2.0
