HUASHUO-HSU6901
| Part # | HUASHUO-HSU6901 |
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HSU6901
N-Ch and P-Ch Fast Switching MOSFETs
Product Summary
Description
The HSU6901 is the high performance
complementary N-ch and P-ch MOSFE
T
s
w
ith
high cell density, which provide excellent RDSON
and gate charge for most of the synchronous
buck converter applications .
BVDSS
60V
RDSON
32mΩ
ID
23A
-18A
-60V
70mΩ
The HSU6901 meet the RoHS and Green
Product requirement,100% EAS guaranteed with
full function reliability approved.
TO252-4 Pin Configuration
l
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
l
l
l
l
Absolute Maximum Ratings
Rating
Symbol
V
DS
Parameter
Units
V
N-Channel P-Channel
Drain-Source Voltage
Gate-Sou
r
ce Voltage
60
±
20
23
-60
±
20
-18
V
GS
V
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
A
15
-11
A
5.6
-4.3
A
4.5
-3.5
A
46
-36
A
EAS
Single Pulse Avalanche Energy
3
34.5
22.6
34.7
2
51.2
mJ
A
I
AS
Avalanche Current
Total Power Dissipation
4
Total Power Dissipation
4
-26.6
34.7
P
D
@T
C
=25
℃
P
D
@T
A
=25
℃
T
STG
W
W
℃
℃
2
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θJA
Parameter
Typ.
—
Max.
62
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θJC
—
3.6
V
e
r 2.0
HSU6901
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
60
—
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=15A
0.063
—
—
V/
℃
32
38
2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
V
GS
=4.5V , I
D
=10A
—
V
GS(th)
Gate Threshold Voltage
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
-5.24
—
mV/
℃
V
DS
=48V , V
GS
=0V , T
J
=25
℃
V
DS
=48V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=5V , I
D
=15A
17
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
3.2
12.56
3.24
6.31
8
—
Ω
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
V
DS
=48V , V
GS
=4.5V , I
D
=12A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
V
DD
=30V , V
GS
=10V , R
G
=3.3
Ω
,
14.2
24.4
4.6
1378
86
—
I
D
=10A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
64
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
23
Unit
A
I
S
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
I
SM
V
SD
—
—
46
A
—
—
1.2
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=22.6A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
V
e
r 2.0
HSU6901
N-Ch and P-Ch Fast Switching MOSFETs
P-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-60
—
—
—
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-12A
-0.03
—
—
V/
℃
70
105
-2.5
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
V
GS
=-4.5V , I
D
=-8A
—
V
GS(th)
Gate Threshold Voltage
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
4.56
—
mV/
℃
V
DS
=-48V , V
GS
=0V , T
J
=25
℃
V
DS
=-48V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=-5V , I
D
=-12A
15
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
13.5
9.86
3.08
2.95
28.8
19.8
60.8
7.2
—
Ω
Q
g
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
V
DS
=-48V , V
GS
=-4.5V , I
D
=-12A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
V
DD
=-15V , V
GS
=-10V , R
G
=3.3
Ω
,
—
I
D
=-1A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
C
iss
C
oss
C
rss
Input Capacitance
1447
97
—
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
70
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
-18
Unit
A
I
S
Continuous Source Current
1,5
Pulsed Source Current
2,5
Diode Forward Voltage
2
I
SM
V
SD
—
—
-36
A
—
—
-1.2
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-26.6A
4.The power dissipation is limited by 150
℃
junction temperature
5.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
V
e
r 2.0
HSU6901
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Typical Characteristics
35
12
I
D
=12A
V
GS
=10V
10
V
GS
=7
33
30
28
25
V
GS
=5V
V
GS
=4.5V
8
V
GS
=3V
6
4
2
0
2
4
6
8
10
0
0.5
1
1.5
2
V
GS
(V)
V
DS
, Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
12
10
8
10
8
I
D
=12A
6
6
T
J
=150
℃
T
J
=25
℃
4
4
2
2
0
0
0
5
10
15
20
25
0.2
0.4
0.6
0.8
1
V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.5
2.0
1.5
1.0
0.5
1.5
1
0.5
0
-50
0
50
100
150
-50
0
50
100
)
150
T ,Junction
Temperature (
T ,
Junction Temperature (
J
)
℃
J
℃
Fig.5 Normalized V
GS(th)
v.s T
J
Fig.6 Normalized R
DSON
v.s T
J
V
e
r 2.0
HSU6901
N-Ch and P-Ch Fast Switching MOSFETs
10000
1000
100
100.00
F=1.0MHz
Ciss
10us
100us
10.00
1ms
10ms
100ms
1.00
DC
Coss
Crss
0.10
T
C
=25
℃
Single Pulse
0.01
10
0.1
1
10
100
1000
1
5
9
13
17
21
25
V
DS
(V)
V
DS
Drain to Source Voltage(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
P
DM
T
ON
T
SINGLE
D =
T
ON
/T
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
V
e
r 2.0
HSU6901
N-Ch and P-Ch Fast Switching MOSFETs
P-Channel Typical Characteristics
160
12
I
D
=-12A
V
GS
=-3V
10
120
80
8
6
V
GS
=-10V
4
V
GS
=-7V
V
GS
=-5V
V
GS
=-4.5V
2
40
0
2
4
6
8
10
0
0.5
1
1.5
2
-V
GS
(V)
-V
DS
, Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
12
10
I
D
=-12A
10
8
8
6
4
2
0
6
T
J
=150
℃
T
J
=25
℃
4
2
0
0
5
10
15
20
25
0.2
0.4
0.6
0.8
1
-V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.5
2.0
1.5
1.0
0.5
1.5
1
0.5
0
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
o
C)
T ,
Junction Temperature (
J
)
℃
Fig.5 Normalized V
GS(th)
v.s T
J
Fig.6 Normalized R
DSON
v.s T
J
V
e
r 2.0
HSU6901
N-Ch and P-Ch Fast Switching MOSFETs
10000
1000
100
100.00
F=1.0MHz
Ciss
10us
100us
10.00
1ms
10ms
100ms
1.00
DC
Coss
Crss
0.10
T
C
=25
℃
Single Pulse
0.01
10
0.1
1
10
100
1000
1
5
9
13
17
21
25
-V
DS
(V)
-V
DS
Drain to Source Voltage(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
P
DM
T
ON
T
SINGLE
D =
T
ON
/T
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
V
e
r 2.0
