HUASHUO-HSW2N15
| Part # | HUASHUO-HSW2N15 |
Download  | HUASHUO-HSW2N15 |
HSW2N15
N-Ch 150V Fast Switching MOSFETs
Product Summary
Description
V
DS
150
V
The HSW2N15 is the high cell density trenched N-
ch MOSFE
T
s
, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
R
DS(ON),typ
I
D
380
m
Ω
1.4
A
The HSW2N15 meet the RoHS and Green Product
requirement with full function reliability approved.
⚫
⚫
⚫
⚫
Green Device Available
Super Low Gate Charge
Excellent Cdv/dt effect decline
Advanced high cell density Trench
technology
SOT23-6L Pin Configuration
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
150
Units
V
Drain-Source Voltage
V
GS
±
20
V
Gate-Sou
r
ce Voltage
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
1.4
0.88
A
A
5.6
A
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
3
1.56
W
℃
℃
Storage
T
e
mperature Range
-55 to 150
-55 to 150
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Typ.
—
Max.
80
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient(steady state)
1
Thermal Resistance Junction-ambient(t<10s)
1
R
θ
JA
—
43
1
V
e
r 2.0
HSW2N15
N-Ch 150V Fast Switching MOSFETs
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
150
—
—
—
2
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/
△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=1A
0.122
380
410
3
—
V/
℃
m
m
V
480
520
4
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=6V , I
D
=0.5A
V
GS(th)
Gate Threshold Voltage
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-4.84
—
—
mV/
℃
V
DS
=150V , V
GS
=0V , T
J
=25
℃
V
DS
=150V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
nA
—
10
±
100
—
V
GS
=
±
20V , V
DS
=0V
I
GSS
Q
g
Gate-Source Leakage Current
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
8.3
2
V
DS
=75V , V
GS
=10V , I
D
=1A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
2.3
8.3
5.8
15
—
—
V
DD
=75V , V
GS
=10V , R
G
=10
—
ns
I
D
=1A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
8
—
C
iss
C
oss
C
rss
Input Capacitance
350
33
—
V
DS
=25V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
25
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
1.4
1
Unit
A
I
S
Continuous Source Current
1,4
Diode Forward Voltage
2
Reverse recovery time
V
SD
trr
—
—
V
—
43
—
ns
nC
Is=1A,di/dt=100A/us
Qrr
Reverse recovery Charge
—
38
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
HSW2N15
N-Ch 150V Fast Switching MOSFETs
Typical Characteristics
Fig.1 Continuous Drain Current vs. T
C
Fig.2 Continuous Drain Current vs. T
C
Fig.3 Normalized V
th
vs. T
J
Fig.4 Gate-Charge Waveform
Fig.5 Normalized Transient Impedance
Fig.6 Maximum Safe Operation Area
3
V
e
r 2.0
HSW2N15
N-Ch 150V Fast Switching MOSFETs
V
DS
90%
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
Fig.8 Gate Charge Waveform
Fig.7 Switching Time Waveform
4
V
e
r 2.0
HSW2N15
N-Ch 150V Fast Switching MOSFETs
SOT23-6L Package Outline Dimensions
5
V
e
r 2.0
