HUASHUO-HSW6604
| Part # | HUASHUO-HSW6604 |
Download  | HUASHUO-HSW6604 |
HSW6604
N-Ch and P-Ch Fast Switching MOSFETs
Product Summary
Description
The HSW6604 is the high performance
complementary N-ch and P-ch MOSFE
T
s
w
ith
high cell density, which provide excellent RDSON
and gate charge for most of the small power
switching and load switch applications.
BVDSS
20V
RDSON
38m
Ω
ID
4A
-20V
64m
Ω
-3A
The HSW6604 meet the RoHS and Green
Product requirement with full function reliability
approved.
SOT23-6L Pin Configuration
⚫
Green Device Available
⚫
Super Low Gate Charge
⚫
Excellent Cdv/dt effect decline
⚫
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Rating
N-Channel
P-Channel
Steady State
Symbol
Parameter
Units
Steady State
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
20
-20
±
12
V
V
±
12
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ -4.5V
1
Continuous Drain Current, V
GS
@ -4.5V
1
Pulsed Drain Current
2
4
3
-3
A
-2.6
A
16
-12.8
A
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
3
1.1
1.1
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
Parameter
Typ.
Max.
Unit
℃
/W
Thermal Resistance Junction-ambient
1
100
—
R
θ
JA
1
V
e
r 2.0
HSW6604
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
20
—
—
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
BV
DSS
Drain-Source Breakdown Voltage
V
V
GS
=4.5V , I
D
=3A
38
48
55
1.2
1
R
DS(ON)
V
GS(th)
I
DSS
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
m
V
V
GS
=2.5V , I
D
=2A
45
V
GS
=V
DS
, I
D
=250uA
V
DS
=16V , V
GS
=0V , T
J
=25
℃
V
DS
=16V , V
GS
=0V , T
J
=55
℃
0.75
—
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
12V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
—
±
100
—
nA
S
V
DS
=5V , I
D
=3A
5
Q
g
2.7
0.4
0.5
2.3
3.1
21
—
—
—
—
—
—
—
—
—
—
V
DS
=10V , V
GS
=4.5V , I
D
=3A
nC
Q
gs
Q
gd
T
d(on)
T
r
Turn-On Delay Time
Rise Time
V
DD
=10V , V
GS
=4.5V , R
G
=3.3
ns
I
D
=3A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
2.6
240
49
C
iss
C
oss
C
rss
Input Capacitance
V
DS
=10V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
23
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
1.8
Unit
A
I
S
Continuous Source Current
1,4
Diode Forward Voltage
2
V
SD
—
—
1.2
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
2
V
e
r 2.0
HSW6604
N-Ch and P-Ch Fast Switching MOSFETs
N-Channel Typical Characteristics
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs G-S Voltage
5
4
3
2
T
J
=150
℃
T
J
=25
℃
1
0
0
0.3
0.6
0.9
1.2
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Source Drain Forward Characteristics
Fig.4 Gate-Charge Characteristics
1.8
1.8
1.4
1.0
0.6
0.2
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs T
J
Fig.6 Normalized R
DSON
vs T
J
3
V
e
r 2.0
HSW6604
N-Ch and P-Ch Fast Switching MOSFETs
1000
100
10
F=1.0MHz
Ciss
Coss
Crss
1
5
9
13
17
21
V
DS
, Drain to Source Voltage (V)
Fig.8 Safe Operating Area
Fig.7 Capacitance
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
P
DM
T
ON
0.001 SINGLE
PULSE
T
D = T
ON
/T
T
Jpeak
= T
C
+
P
D
M
x R
θJC
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
V
DS
90%
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
4
V
e
r 2.0
HSW6604
N-Ch and P-Ch Fast Switching MOSFETs
P-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-20
—
Typ.
—
Max.
—
Unit
BV
DSS
Drain-Source Breakdown Voltage
V
V
GS
=-4.5V , I
D
=-3A
64
80
R
DS(ON)
V
GS(th)
I
DSS
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
m
V
V
GS
=-2.5V , I
D
=-2A
—
82
120
-1.2
-1
V
GS
=V
DS
, I
D
=-250uA
-0.4
—
-0.65
—
V
DS
=-16V , V
GS
=0V , T
J
=25
℃
V
DS
=-16V , V
GS
=0V , T
J
=55
℃
Drain-Source Leakage Current
uA
—
—
-5
V
GS
=
±
12V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
—
—
±
100
—
nA
S
V
DS
=-5V , I
D
=-3A
—
5
Q
g
—
6.1
1.7
1.2
12
—
V
DS
=-10V , V
GS
=-4.5V , I
D
=-3A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
—
Turn-On Delay Time
Rise Time
—
—
V
DD
=-10V , V
GS
=-4.5V , R
G
=3.3
—
6.6
113
46
—
ns
I
D
=-3A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
561
61
—
V
DS
=-10V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
—
52
—
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
-1.8
-1.2
Unit
A
V
G
=V
D
=0V , Force Current
I
S
Continuous Source Current
1,4
Diode Forward Voltage
2
V
SD
V
GS
=0V , I
S
=-1A , T
J
=25
℃
—
-0.81
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
5
V
e
r 2.0
HSW6604
N-Ch and P-Ch Fast Switching MOSFETs
Typical Characteristics
12
V
GS
=-5V
V
GS
=-4.5V
V
GS
=-3V
10
8
V
GS
=-2.5V
6
V
GS
=-1.8V
4
2
0
0
0.5
1
1.5
2
-V
DS
, Drain-to-Source Voltage (V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs G-S Voltage
10
8
6
T
J
=150
℃
T
J
=25
℃
4
2
0
0
0.4
0.8
1.2
-V
SD
, Source-to-Drain Voltage (V)
Fig.3 Source Drain Forward Characteristics
Fig.4 Gate-Charge Characteristics
1.8
1.8
1.4
1
1.4
1.0
0.6
0.2
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs T
J
Fig.6 Normalized R
DSON
vs T
J
6
V
e
r 2.0
HSW6604
N-Ch and P-Ch Fast Switching MOSFETs
1000
100
10
100.00
Ciss
100us
10ms
10.00
1.00
0.10
0.01
Coss
Crss
100ms
1s
T
A
=25
℃
DC
F=1.0MHz
Single Pulse
1
5
9
13
17
21
0.1
1
10
100
-V
DS
, Drain to Source Voltage (V)
-V
DS
(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
P
DM
T
ON
0.001 SINGLE
PULSE
T
D = T
ON
/T
T
Jpeak
= T
A
+
P
D
M
x R
θJA
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
7
V
e
r 2.0
HSW6604
N-Ch and P-Ch Fast Switching MOSFETs
SOT23-6 Package Outline Dimensions
8
V
e
r 2.0
