HUAYI-HY1210D
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Download  | HUAYI-HY1210D |
HY1210D/U/V
N-Channel Enhancement Mode MOSFET
Feature
Pin Description
100V/26A
R
DS(ON
)
= 32mΩ(typ.)@V
GS
= 10V
R
DS(ON)
= 34mΩ(typ.)@V
GS
= 4.5V
100% Avalanche Tested
Reliable and Rugged
S
S
D
D
G
G
Halogen Free and Green Devices Available
(RoHS Compliant)
S
D
G
TO-252-2L
TO-251-3L
TO-251-3S
Applications
Power Management for Inverter Systems
N-Channel MOSFET
Ordering and Marking Information
Package Code
D: TO-252-2L
U: TO-251-3L
D
U
V
V: TO-251-3S
Date Code
HY1210
HY1210
HY1210
YYXXXJWW G
YYXXXJWW G
YYXXXJWW G
YYXXX WW
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi-
Nation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
V1.
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HY1210D/U/V
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(
T
c=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
100
±20
V
V
Gate-Source Voltage
Maximum Junction
T
emperture
Storage
T
emperture Range
Drain Current-Continuous
150
°C
°C
A
T
STG
I
S
-55 to 150
26
T
c
=25°C
Mounted on Large Heat Sink
T
c
=25°C
T
c
=25°C
T
c
=100°C
T
c
=25°C
T
c
=100°C
100
26
A
A
I
DM
ID
Pulsed Drain Current *
Continuous Drain Current
17
A
50
W
P
D
Maximum Power Dissipation
20
W
R
JC
R
J
A
E
AS
°C/W
°C/W
mJ
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient **
Single Pulsed-Avalanche Energy ***
2.5
110
108
L=0.3mH
Note:
*
**
Repetitive rating ; pulse width limited by max junction temperature.
Surface mounted on a square inches Cu board.
***
Limited by T
J
max , starting T
J
=25°C
, L = 0.3mH, VD
= 80V
, V
G
S
=10V.
Electrical Characteristics
(Tc =25°C Unless Otherwise Noted)
HY1210
Symbol
Parameter
Test Conditions
Unit
Min
Typ
Max
Static Characteristics
V
GS
=
0V
,I
DS
=250uA
V
DS
=
100V, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
100
–
–
–
1
V
–
uA
uA
V
I
DSS
Drain-to-Source LeakageCurrent
T
J
=85°C
–
–
30
V
DS
=V
GS
, I
DS
=250uA
V
GS
=
±
20V,V
DS
=0V
V
GS
=10V,I
DS
=10A
V
GS
=4.5V,I
DS
=10A
V
GS(th)
I
GSS
Gate Threshold Voltage
1.0
2.0
–
3.0
±100
36
Gate-Source Leakage Current
–
–
–
nA
m
Ω
m
Ω
32
34
R
DS(ON)
*
Drain-Source On-state Resistance
38
Diode Characteristics
V
SD
*
t
rr
Diode Forward Voltage
I
SD
=10A,V
GS
=0V
–
–
–
0.8
21
52
1.3
V
Reverse Recovery Time
Reverse Recovery Charge
–
–
ns
nC
I
SD
=13
A,
dI
SD
/dt
=100A/us
Q
rr
V1.
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HY1210D/U/V
Electrical Characteristics (Cont.)
(Tc =25°C Unless Otherwise Noted)
HY110
Typ
Symbol
Parameter
Test Conditions
Unit
Min
Max
Dynamic Characteristics
V
GS
=0V
,
V
DS
=0V,F=1
MHz
R
G
Gate Resistance
–
1.7
–
Ω
Ciss
Coss
Crss
t
d(ON)
T
r
Input Capacitance
–
–
–
–
–
–
–
2543
38
–
–
–
–
–
–
–
V
GS
=0V,
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
V
DS
=25V,
pF
Frequency=1.0MHz
5.8
11
8
V
DD
=50V,
R
G
=3
Ω,
I
DS
=13A,V
GS
=10V
ns
t
d(OFF)
Turn-off Delay Time
Turn-off Fall Time
24
T
f
13
Gate Charge
Characteristics
Qg
Total Gate Charge
–
–
–
72
8
–
–
–
V
DS
=80V, V
GS
=10V
，
Qgs
Qgd
nC
Gate-Source Charge
Gate-Drain Charge
I
D
=13A,
14
Note: *Pulse test; pulse width ≤ 300us
，
duty cycle ≤ 2%
V1.
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HY1210D/U/V
Typical Operating Characteristics
Figure 1: Power Dissipation
Figure 2: Drain Current
Tc-Case Temperature(
℃
)
Tc-Case Temperature(
℃
)
Figure 3: Safe Operation Area
Figure 4: Thermal Transient Impedance
V
DS
-Drain-Source Voltage(V)
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 5: Output Characteristics
Figure 6: Drain-Source On Resistance
V
DS
-Drain-Source Voltage (V)
I
D
-Drain Current(A)
V1.
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HY1210D/U/V
Typical Operating Characteristics(Cont.)
Figure 7: On-Resistance vs. Temperature
Figure 8: Source-Drain Diode Forward
Tj-Junction
T
emperature (
℃
)
V
SD
-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics
Figure 10: Gate Charge Characteristics
V
DS
-Drain-Source Voltage (V)
Q
G
-Gate Charge (
nC
)
V1.
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HY1210D/U/V
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Gate Charge Test Circuit and Waveforms
V1.
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HY1210D/U/V
Device Per Unit
Package Type
TO-252-2L
Unit
Tube
Quantity
75
TO-252-2L
Reel
Tube
Tube
2500
75
TO-251-3L
TO-251-3S
75
Package Information
TO-252-2L
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.00
0.97
0.68
5.20
0.43
5.98
NOM
2.30
–
MAX
2.40
0.20
1.17
0.90
5.50
0.63
6.22
A
A1
A2
b
1.07
0.78
5.33
0.53
6.10
5.30REF
6.60
–
b3
c
D
D1
E
6.40
4.63
6.80
–
E1
e
2.286BSC
10.10
1.50
2.90REF
0.51BSC
–
H
9.40
1.38
10.50
1.75
L
L1
L2
L3
L4
L5
θ
0.88
–
1.28
1.00
1.95
8°
–
1.65
0°
1.80
–
V1.
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HY1210D/U/V
TO-251-3L
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.97
0.68
0.00
0.00
5.20
0.43
5.98
NOM
2.30
MAX
2.40
1.17
0.90
0.10
0.10
5.50
0.63
6.22
A
A2
b
1.07
0.78
b2
b2′
b3
c
0.04
0.04
5.33
0.53
D
6.10
D1
E
5.30REF
6.60
6.40
4.63
6.80
–
E1
e
–
2.286BSC
16.52
9.40
H
16.22
9.15
0.88
1.65
16.82
9.65
1.28
1.95
L1
L3
L5
1.02
1.80
V1.
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HY1210D/U/V
TO-251-3S
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.97
0.68
5.20
0.43
5.98
NOM
2.30
MAX
2.40
1.17
0.90
5.50
0.63
6.22
A
A2
b
1.07
0.78
b3
c
5.33
0.53
D
6.10
D1
E
5.30REF
6.60
6.40
4.63
6.80
–
E1
e
–
2.286BSC
11.22
4.10
H
10.00
3.90
0.88
1.65
11.44
4.30
1.28
1.95
L1
L3
L5
1.02
1.80
V1.
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HY1210D/U/V
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
150 °C
200 °C
Temperature min (T
smin
)
Temperature max (T
smax
)
60-120 seconds
60-120 seconds
Time (Tsmin to Tsmax) (t
Average ramp-up rate
s
)
3 °C/second max.
3°C/second max.
(T
smax
to T )
P
Liquidous temperature (T
Time at liquidous (t
Peak package body Temperature
(T )*
Time (t
classification temperature (T
Average ramp-down rate (T to T
smax
Time 25°C to peak temperature
L
)
183 °C
217 °C
L
)
60-150 seconds
60-150 seconds
See Classification Temp in table 1
SeeClassification Tempin table 2
p
P
)** within 5°C of the specified
20** seconds
30** seconds
c
)
p
)
6 °C/second max.
6 minutes max.
6 °C/second max.
8 minutes max.
*Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
p
) is defined as a supplier minimum and a user maximum.
V1.
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HY1210D/U/V
Table 1.SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Thickness
＜
2.5 mm
≥2.5 mm
Volume mm
³
<350
Volume mm
³
≥
350
235 °C
220 °C
220 °C
220 °C
Table 2.Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm
³
<350
Volume mm
³
350-2000
260 °C
Volume mm
³
≥
2000
260 °C
260 °C
1.6 mm – 2.5 mm
≥
2.5 mm
260 °C
250 °C
245 °C
250 °C
245 °C
245 °C
Reliability Test Program
Test item
Method
Description
SOLDERABILITY
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
5 Sec, 245°C
HTRB
PCT
168/500/1000 Hrs, Bias @ 150°C
96 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -55°C~150°C
TCT
Customer Service
Worldwide Sales and Service: sales@hymexa.com
Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and
T
echnological Development Zone,Xi’an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
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