HUAYI-HY1403D
| Part # | HUAYI-HY1403D |
Download  | HUAYI-HY1403D |
HY1403D/U/
V
N-Channel Enhancement Mode MOSFET
Features
Pin Description
z
30V/
42
A
R
DS(ON)
=
10
m
Ω
(typ.) @V
GS
=- 10V
R
DS(ON)
=
14
m
Ω
(typ.) @V
GS
= -4.5V
S
D
S
z
z
z
100% Avalanche Tested
Reliable and Rugged
G
D
G
S
D
G
Halogen
Free and Green Devices Available
(RoHS Compliant)
TO-252-2L
TO-251-3L
TO-251-3S
Applications
z
z
Switching Application
Power Management for DC/DC
N-Channel MOSFET
Ordering and Marking Information
Package Code
U : TO-251-3L
D : TO-252-2L
V: TO-251-3S
D
U
V
HY1403 HY1403 HY1403
Assembly Material
G : Halogen Free
Date Code
YYXXX WW
YYXXXJWW G
YYXXXJWW G
YYXXXJWW G
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
Termi-Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-
Free require-ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed
900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improveme nts to
this pr-oduct and/or to this document at any time without notice.
1
V1.1
HY1403D/U/S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
30
V
±20
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
150
°C
°C
A
-55 to 150
T
STG
I
S
T
C
=25°C
42
Mounted on Large Heat Sink
I
DM
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
140**
42
A
A
Pulsed Drain Current *
I
D
Continuous Drain Current
30
30
P
D
Maximum Power Dissipation
W
12
T =100°C
c
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Energy
4.2
°C/W
°C/W
mJ
R
JC
R
JA
E
AS
110
70***
L=0.5mH
Note
：
*
Repetitive rating ; pulse width limiited by junction temperature
** Drain
current is limited by junction temperature
*** VD=24V
Electrical Characteristics
(T
C
= 25
C Unless Otherwise Noted)
HY1403
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
Zero Gate Voltage Drain Current
V
GS(th)
Gate Threshold Voltage
30
–
–
–
1
V
V
GS
=0V, I
DS
=250
A
V
DS
=30V, V
GS
=0V
–
A
T
J
=125°C
–
1.0
–
–
50
1.6
–
3.0
±100
11
V
V
DS
=V
GS
, I
DS
=250
A
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=21A
V
GS
=4.5V, I
DS
=21A
I
GSS
Gate Leakage Current
nA
–
10
14
m
m
*
R
DS(ON)
Drain-Source On-state Resistance
17
Diode Characteristics
*
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
=21A, V
GS
=0V
–
–
–
0.8
21
13
1.1
V
–
–
ns
nC
I
DS
=21A, dl
SD
/dt=100A/
s
Q
rr
2
V1.
1
HY1403D/U/S
Electrical Characteristics (Cont.)
(T
C
= 25
C Unless Otherwise Noted)
HY1403
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
–
–
–
–
–
–
–
–
2.9
1012
251
119
15
–
–
Input Capacitance
V
GS
=0V,
V
DS
=15V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
–
–
t
d(ON)
Turn-on Delay Time
T
r
Turn-on Rise Time
t
d(OFF)
Turn-off Delay Time
T
f
Turn-off Fall Time
Gate Charge Characteristics
28
24
35
19
V
DD
=15 V, R
G
= 3
,
13
I
DS
=21A, V
G
S
=10
V
,
ns
20
10
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
–
–
–
29
–
–
–
V
I
DS
=24V, V
GS
=
1
0 V,
DS
=21A
nC
4.6
4.3
Note * : Pulse test ; pulse width
300
s, duty cycle
2%.
3
V1.
1
HY1403D/U/S
Typical Operating Characteristics
Power Dissipation
Drain Current
60
60
50
50
40
30
20
10
40
30
20
10
T
C
=25
o
C
0
T
C
=25
o
C,V
G
=10V
0
20 40 60 80
100 120 140 160 180 200
0
20 40 60 80
100 120 140 160 180 200
T
c
–
Temperature (°C)
T
c
–
C
ase
T
emperature (°C)
Case
Safe Operation Area
400
100
Limit
100
s
Rds(on)
1ms
10
1
10ms
DC
T
C
=25
O
C
0.1
0.01
0.1
1
10
100
400
V
DS
– Drain – Source Voltage (V)
Thermal Transient Impedance
10
1
Duty =
0.5
0.2
0.1
0.05
0.1
0.02
0.01
0.01
Single
Mounted on minimum pad
R
JA
: 11
0
o
C/W
0.001
0.1
0.0001
0.001
0.01
1
10
Square Wave Pulse Duration (sec)
4
V1.
1
HY1403D/U/S
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
80
70
60
50
40
30
20
10
0
17
15
13
11
9
V
GS
=4.5V
V
GS
= 4.5,5,6,7,8,9,10V
V
GS
=10V
4V
7
3.5V
3V
5
3
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
10
20
30
40
50
V
DS
– Drain – Source Voltage (V)
I
D
– Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
1.6
24
20
16
12
8
I
DS
=21A
I
DS
=250
A
1.4
1.2
1.0
0.8
0.6
0.4
0.2
4
0
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75
100 125 150
V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
emperature (°C)
5
V1.
1
HY1403D/U/S
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
200
100
V
GS
= 10V
I
DS
= 21A
T
j
=150
o
C
10
1
T
j
=25
o
C
R
ON
@T
j
=25
o
C: 10m
0.1
-50 -25
0
25 50 75
100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
j
– Junction
T
emperature (°C)
V
SD
– Source – Drain Voltage (V)
Capacitance
Gate Charge
10
1600
1400
1200
1000
800
600
400
200
0
Frequency=1MHz
V
DS
= 24V
DS
= 21A
9
8
7
6
5
4
3
2
1
0
I
Ciss
Coss
Crss
0
5
10
15
20
25
30
0
5
10
15
20
25
30
V
DS
– Drain – Source Voltage (V)
Q
G
–
G
ate Charge (nC)
6
V1.
1
HY1403D/U/S
Avalanche Test Circuit
V
DS
L
V
DSX(SUS)
t
p
DUT
V
DS
I
AS
R
G
V
DD
V
DD
I
L
tp
E
AS
0.01
Ω
t
AV
Switching Time Test Circuit
V
DS
R
D
V
DS
90%
DUT
V
GS
R
G
V
DD
10%
V
GS
tp
t
d(on)
t
r
t
d(off)
t
f
7
V1.1
HY1403D/U/S
Package Information
TO-252-2L
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.00
0.97
0.68
5.20
0.43
5.98
NOM
2.30
MAX
2.40
0.20
1.17
0.90
5.50
0.63
6.22
A
A1
A2
b
–
1.07
0.78
b3
c
5.33
0.53
D
6.10
D1
E
5.30REF
6.60
6.40
4.63
6.80
–
E1
e
–
2.286BSC
H
9.40
1.38
10.10 10.50
L
1.50
1.75
L1
L2
L3
L4
L5
θ
2.90REF
0.51BSC
0.88
–
–
1.28
1.00
1.95
8°
–
1.80
–
1.65
0°
8
V1.1
HY1403D/U/S
TO-251-3L
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.97
0.68
0.00
0.00
5.20
0.43
5.98
NOM
2.30
MAX
2.40
1.17
0.90
0.10
0.10
5.50
0.63
6.22
A
A2
b
1.07
0.78
b2
b2′
b3
c
0.04
0.04
5.33
0.53
D
6.10
D1
E
5.30REF
6.60
6.40
4.63
6.80
–
E1
e
–
2.286BSC
16.52
9.40
H
16.22
9.15
0.88
1.65
16.82
9.65
1.28
1.95
L1
L3
L5
1.02
1.80
9
V1.1
HY1403D/U/S
TO-251-3L
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.97
0.68
5.20
0.43
5.98
NOM
2.30
MAX
2.40
1.17
0.90
5.50
0.63
6.22
A
A2
b
1.07
0.78
b3
c
5.33
0.53
D
6.10
D1
E
5.30REF
6.60
6.40
4.63
6.80
–
E1
e
–
2.286BSC
11.22
4.10
H
10.00
3.90
0.88
1.65
11.44
4.30
1.28
1.95
L1
L3
L5
1.02
1.80
10
V1.1
HY1403D/U/S
Device Per Unit
Package Type
TO-252-2L
Unit
Tube
Quantity
75
TO-252-2L
Reel
Tube
Tube
2500
75
TO-251-3L
TO-251-3S
75
Classification Profile
11
V1.1
HY1403D/U/S
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Preheat & Soak
100
C
150
C
60-120 seconds
150
C
200
C
60-120 seconds
Temperature min (T
smin
)
Temperature max (T
smax
)
Time (T
smin
to T
smax
) (t
s
)
Average ramp-up rate
(T
smax
to T
P
)
3
C/second max.
3
C/second max.
Liquidous temperature (T
L
)
Time at liquidous (t
L
)
183
C
60-150 seconds
217
C
60-150 seconds
Peak package body Temperature
(T
p
)*
See Classification Temp in table 1
20** seconds
See Classification Temp in table 2
30** seconds
Time (t
P
)** within 5
C of the specified
classification temperature (T
c
)
Average ramp-down rate (T
p
to T
smax
)
6
C/second max.
6
C/second max.
6 minutes max.
8 minutes max.
Time 25
C to peak temperature
* Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
p
) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm
3
Package
Thickness
Volume mm
3
<350
≥
350
<2.5 mm
235
C
220
C
220
C
2.5 mm
220
C
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm
3
Volume mm
3
350-2000
260
C
Volume mm
3
<350
260
C
260
C
250
C
>2000
260
C
245
C
245
C
1.6 mm – 2.5 mm
2.5 mm
250
C
245
C
Reliability Test Program
Test item
SOLDERABILITY
Method
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
Description
5 Sec, 245
q
C
168 Hrs /500 Hrs /1000 Hrs, Bias @ 150°C
96
Hrs, 100
ꢀ
RH, 2atm, 121
q
C
500 Cycles, –
5
5
q
C~150
q
C
HOLT
PCT
TCT
&XVWRPHUꢀ6HUYLFH
Worldwide Sales and Service: sales@hymexa.com
Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and
T
e
chnological Development Zone,Xi’an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
12
V1.1
