HUAYI-HY1620B
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HY1620P/B
N-Channel Enhancement Mode MOSFET
FeatureDescription
Pin Description
200V/60A
R
DS(ON)
= 32m
Ω
(typ.)@V
GS
= 10V
100% Avalanche Tested
Reliable and Rugged
Lead Free and Green Devices Available
(RoHS Compliant)
TO-220FB-3L
TO-263-2L
Applications
Power Management for Inverter Systems
N-Channel MOSFET
Ordering and Marking Information
Package Code
P:
B:TO-263-2L
P
B
TO-220FB-3L
HY1620
YYXXXJWWG
HY1620
YYXXXJWWG
Date Code
YYXXX WW
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi-
Nation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
V1.0
1
HY1620P/B
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(
T
c
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
200
±25
V
V
Gate-Source Voltage
Maximum Junction
T
emperature
Storage
T
emperature Range
Source Current-Continuous(Body Diode)
175
°C
°C
A
T
STG
I
S
-55 to 175
60
T
c
=25°C
Mounted on Large Heat Sink
T
c
=25°C
T
c
=25°C
T
c
=100°C
T
c
=25°C
T
c
=100°C
200
60
A
A
I
DM
Pulsed Drain Current *
I
D
Continuous Drain Current
42
A
263.2
132
0.57
62.5
82.5
W
P
D
Maximum Power Dissipation
W
R
θ
J
C
R
θ
J
A
E
AS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
SinglePulsed-Avalanche Energy **
°C/W
°C/W
mJ
L=0.5mH
Note:
*
Repetitive rating
；
pulse width limited by max.junction temperature.
Limited by T
J
max , starting T
J
=25°C
, L =
0.5mH
, R
G
= 25
Ω
,
V
GS
=10V
.
**
Electrical Characteristics
(Tc =25°C Unless Otherwise Noted)
HY1620
Symbol
Parameter
Test Conditions
Unit
Min
Typ.
Max
Static Characteristics
V
GS
=
0V
,I
DS
=250
μ
A
BV
DSS
Drain-Source Breakdown Voltage
200
–
–
V
μ
A
μ
A
V
V
DS
=200
V
,
V
GS
=0V
–
–
1
50
I
DSS
Drain-to-Source LeakageCurrent
T
J
=125°C
–
V
DS
=V
GS
, I
DS
=250
μ
A
V
GS
=
±
25
V
,
V
DS
=0V
V
GS
=10V,I
DS
=30A
V
GS(th)
I
GSS
Gate Threshold Voltage
2
–
3
–
4
Gate-Source Leakage Current
Drain-Source On-State Resistance
±100
38
nA
m
Ω
R
DS(ON)
*
32
Diode Characteristics
Diode Forward Voltage
I
SD
=30A,V
GS
=0V
–
–
–
0.81
40
1.3
V
V
SD
*
t
rr
Reverse Recovery Time
Reverse Recovery Charge
–
–
ns
nC
I
SD
=30A,dI
SD
/dt
=100A/
μs
Q
rr
80
V1.0
2
HY1620P/B
Electrical Characteristics (Cont.)
(Tc =25°C Unless Otherwise Noted)
HY1620
Typ.
Symbol
Parameter
Test Conditions
Unit
Min
Max
Dynamic Characteristics
V
GS
=0V
,
V
DS
=0V,F=1
MHz
R
G
Gate Resistance
–
2.5
–
Ω
C
iss
C
oss
C
rss
t
d(ON)
T
r
Input Capacitance
–
–
–
–
–
–
–
2479
342
78
–
–
–
–
–
–
–
V
GS
=
0V
,
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
V
DS
=
25V
,
pF
Frequency=1.0MHz
29
45
V
DD
=50V,
R
G
=4
Ω,
ns
I
DS
=30A,V
GS
=10V
t
d(OFF)
T
f
Turn-off Delay Time
Turn-off Fall Time
85
50
Gate Charge
Characteristics
Q
g
Q
gs
Q
gd
Total Gate Charge
–
–
–
51
10
20
–
–
–
V
DS
=100V, V
GS
=10V
，
nC
Gate-Source Charge
Gate-Drain Charge
I
D
=30A
Note: *Pulse test
，
pulse width
≤
300us
，
duty cycle
≤
2%
V1.0
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HY1620P/B
Typical Operating Characteristics
Figure 1: Power Dissipation
Figure 2: Drain Current
Tc-Case Temperature(
℃
)
T
c
-Case
T
emperature(
℃
)
Figure 3: Safe Operation Area
Figure 4: Thermal Transient Impedance
V
DS
-Drain-Source Voltage(V)
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 5: Output Characteristics
Figure 6: Drain-Source On Resistance
V
DS
-Drain-Source Voltage (V)
I
D
-Drain Current(A)
V1.0
4
HY1620P/B
Typical Operating Characteristics(Cont.)
Figure 9: On-Resistance vs. Temperature
Figure 10: Source-Drain Diode Forward
Tj-Junction
T
emperature (
℃
)
V
SD
-Source-Drain Voltage(V)
Figure 11: Capacitance Characteristics
Figure 12: Gate Charge Characteristics
V
DS
-Drain-Source Voltage (V)
Q
G
-Gate Charge (
nC
)
V1.0
5
HY1620P/B
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Gate Charge Test Circuit and Waveforms
V1.0
6
HY1620P/B
Device Per Unit
Package Type
TO-220FB-3L
TO-263-2L
Unit
Tube
Tube
Quantity
50
50
Package Information
TO-220FB-3L
COMMON DIMENSIONS
mm
NOM
4.57
SYMBOL
MIN
4.37
1.25
2.20
0.70
1.17
0.40
15.10
8.80
5.50
9.70
7.00
MAX
4.77
1.45
2.60
0.95
1.47
0.65
16.10
9.40
–
A
A1
A2
b
1.30
2.40
0.80
b2
c
1.27
0.50
D
15.60
9.10
D1
D2
E
–
10.00
–
10.30
–
E3
e
2.54 BSC
5.08 BSC
6.50
e1
H1
L
6.25
12.75
–
6.85
13.80
3.40
3.80
3.00
13.50
3.10
L1
ΦP
Q
3.40
2.60
3.60
2.80
V1.0
7
HY1620P/B
TO-263-2L
COMMON DIMENSIONS
mm
SYMBOL
MIN
4.37
1.22
2.49
0
NOM
4.57
1.27
2.69
0.13
0.81
1.27
0.38
8.7
MAX
4.77
1.42
2.89
0.25
0.96
1.47
0.53
8.9
A
A1
A2
A3
b
0.7
b1
c
1.17
0.3
D1
D4
E
8.5
6.6
–
–
9.86
7.06
10.16
–
10.36
–
E5
e
2.54 BSC
15.1
1.27
2.3
H
14.7
1.07
2
15.5
1.47
2.6
H2
L
L1
L4
θ
1.4
1.55
0.25 BSC
5°
1.7
0°
9°
V1.0
8
HY1620P/B
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
150 °C
200 °C
Temperature min (T
smin
)
Temperature max (T
smax
)
60-120 seconds
60-120 seconds
Time (Tsmin to Tsmax) (t
Average ramp-up rate
s
)
3 °C/second max.
3°C/second max.
(T
smax
to T
Liquidous temperature (T
Time at liquidous (t
Peak package body Temperature
(T )*
Time (t
classification temperature (T
Average ramp-down rate (T
Time 25°C to peak temperature
P
)
L
)
183 °C
217 °C
L
)
60-150 seconds
60-150 seconds
See Classification Temp in table 1
SeeClassification Tempin table 2
p
P
)** within 5°C of the specified
20** seconds
30** seconds
c
)
p
to T
smax
)
6 °C/second max.
6 minutes max.
6 °C/second max.
8 minutes max.
*Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
p
) is defined as a supplier minimum and a user maximum.
V1.0
9
HY1620P/B
Table 1.SnPb Eutectic Process – Classification
T
emperatures (Tc)
Package
Thickness
＜
2.5 mm
≥2.5 mm
Volume mm
³
<350
Volume mm
³
≥
350
235 °C
220 °C
220 °C
220 °C
Table 2.Pb-free Process – Classification Temperatures (
T
c
)
Package
Thickness
<1.6 mm
Volume mm
³
<350
Volume mm
³
350-2000
260 °C
Volume mm
³
≥
2000
260 °C
260 °C
1.6 mm – 2.5 mm
≥
2.5 mm
260 °C
250 °C
245 °C
250 °C
245 °C
245 °C
Reliability Test Program
Test item
Method
Description
SOLDERABILITY
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
5 Sec, 245°C
HTRB
PCT
168/500/1000 Hrs, Bias @ 150°C
96 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -55°C~150°C
TCT
Customer Service
Worldwide Sales and Service: sales@hymexa.com
Xi’an Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and
T
echnological Development Zone,Xi’an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
V1.0
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