HUAYI-HY1707P
| Part # | HUAYI-HY1707P |
Download  | HUAYI-HY1707P |
HY1707P/M/B/I/MF/PS/PM
N-Channel Enhancement Mode MOSFET
Pin Description
Features
•
70V/80A,
R
DS(ON)
= 6m
(typ.) @ V
GS
=10V
Avalanche Rated
S
D
G
•
•
•
S
S
D
D
G
G
S
Reliable and Rugged
D
G
Lead Free and Gree
n
D
evice
s
A
vailable
(RoHS Compliant)
TO-263-2L
TO-26
2
–
3
L
TO-220FB-3M
TO-220FB-3L
S
D
G
S
S
D
D
G
G
Applications
TO-3PS-3L
TO-3P
M
-3S
TO-220MF-3L
Power Management for Inverter Systems.
1ꢂ&KDQQHOꢁ026)(7
Ordering and Marking Information
Package Code
P
M
B
I
P : TO-220FB-3L
B: TO-263-2L
MF: TO-220MF-3L
PM: TO-3PM-3S
M : TO-220FB-3S
I : TO-262-3L
PS: TO-3PS-3L
HY1707
HY1707
HY1707
HY1707
YYXXXJWW G
YYXXXJWW G
YYXXXJWW G
YYXXXJWW G
MF
PS
PM
Assembly Material
G : Lead Free Device
HY1707
HY1707
HY1707
Date Code
YYXXX WW
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YYXXXJWW G
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1
V1.0
HY1707P/M/B/I/MF/PS/PM
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
70
±25
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
175
°C
°C
A
T
STG
I
S
-55 to 175
80
T
C
=25°C
Mounted on Large Heat Sink
I
DM
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
320**
80
A
A
Pulsed Drain Current *
I
D
Continuous Drain Current
65
178
90
P
D
Maximum Power Dissipation
W
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Energy
0.84
62.5
650***
°C/W
°C/W
mJ
R
JC
R
JA
E
AS
L=0.3mH
Note
：
*
Repetitive rating ; pulse width limiited by junction temperature
** Drain
current is limited by junction temperature
*** VD=55V
Electrical Characteristics
(T
C
= 25
C Unless Otherwise Noted)
HY1707
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
70
–
74
–
–
1
V
V
GS
=0V, I
DS
=250
A
V, V
V
DS
=70
GS
=0V
T
J
=85°C
I
DSS
Zero Gate Voltage Drain Current
A
–
–
10
4
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
2
–
3
–
V
V
DS
=V
GS
, I
DS
=250
A
V
GS
=±25V, V
DS
=0V
V
GS
=10V, I
DS
=40A
±100
7
nA
m
*
R
DS(ON)
Drain-Source On-state Resistance
–
6
Diode Characteristics
*
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
=40A, V
GS
=0V
–
–
–
0.8
55
1
–
V
ns
nC
I
DS
=40A, dl
SD
/dt=100A/
s
Q
rr
100
–
2
V1.0
HY1707P/M/B/I/MF/PS/PM
Electrical Characteristics (Cont.)
(T
C
= 25
C Unless Otherwise Noted)
HY1707
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
–
–
–
–
–
–
–
–
0.9
4550
900
280
21
–
–
Input Capacitance
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
–
–
t
d(ON)
Turn-on Delay Time
T
r
Turn-on Rise Time
t
d(OFF)
Turn-off Delay Time
T
f
Turn-off Fall Time
Gate Charge Characteristics
39
19
48
57
V
DD
=35V, R
G
=3
,
10
I
DS
=40A, V
=10V,
ns
GS
25
31
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
–
–
–
88
20
21
–
–
–
V
DS
=55V, V
GS
=10V,
I
DS
=40A
nC
Note * : Pulse test ; pulse width
300
s, duty cycle
2%.
3
V1.0
HY1707P/M/B/I/MF/PS/PM
Typical Operating Characteristics
Power Dissipation
Drain Current
100
80
60
40
20
240
200
limited by package
160
120
80
40
T
C
=25
o
C
0
T
C
=25
o
C,V
G
=10V
0
20 40 60 80
100 120 140 160 180 200
0
20 40 60 80
100 120 140 160 180 200
T
c
–
Temperature (°C)
T
c
–
C
ase
T
emperature (°C)
Case
Safe Operation Area
400
100
100us
1ms
Rds(on) Limit
10
1
10ms
DC
T
C
=25
o
C
0.1
0.1
1
10
100
V
DS
– Drain – Source Voltage (V)
Thermal Transient Impedance
10
1
Duty =
0.5
0.2
0.1
0.05
0.1
0.02
0.01
0.01
Single
Mounted on minimum pad
o
R
JA
:62.5 C/W
0.001
0.1
0.0001
0.001
0.01
1
10
Square Wave Pulse Duration (sec)
4
V1.0
HY1707P/M/B/I/MF/PS/PM
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
160
140
120
100
80
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
V
GS
= 7,8,9,10V
6V
5.5V
5V
V
GS
=10V
60
40
20
4.5V
4V
0
0
1
2
3
4
5
0
20
40
60
80
100
V
DS
– Drain-Source Voltage (V)
I
D
– Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
11
10
9
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
DS
=40A
I
DS
=250
A
8
7
6
5
4
4
5
6
7
8
9
10
-50 -25
0
25 50 75
100 125 150 175
V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
emperature (°C)
V1.0
5
HY1707P/M/B/I/MF/PS/PM
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
160
100
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
V
GS
= 10V
I
DS
= 40A
T
j
=175
o
C
10
1
T
j
=25
o
C
R
ON
@
T
=
25
o
C: 6m
j
0.1
0.0
-50 -25
0
25 50 75
100 125 150 175
0.3
0.6
0.9
1.2
1.5
T
j
– Junction
T
emperature (°C)
V
SD
– Source-Drain Voltage (V)
Capacitance
Gate Charge
10
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
V
DS
= 55V
I
DS
= 40A
Frequency=1MHz
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
0
0
12 24 36 48 60 72 84 96
0
5
10 15 20 25 30 35 40
V
DS
– Drain – Source Voltage (V)
Q
G
–
G
ate Charge (nC)
6
V1.0
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V1.0
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Device Per Unit
Package Type
Unit
Quantity
TO-262-3L
Tube
50
Package Information
TO-262-3L
11
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Classification Profile
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Preheat & Soak
100
C
150
C
60-120 seconds
150
C
200
C
60-120 seconds
Temperature min (T
smin
)
Temperature max (T
smax
)
Time (T
smin
to T
smax
) (t
s
)
Average ramp-up rate
(T
smax
to T
P
)
3
C/second max.
3
C/second max.
Liquidous temperature (T
L
)
Time at liquidous (t
L
)
183
C
60-150 seconds
217
C
60-150 seconds
Peak package body Temperature
(T
p
)*
See Classification Temp in table 1
20** seconds
See Classification Temp in table 2
30** seconds
Time (t
P
)** within 5
C of the specified
classification temperature (T
c
)
Average ramp-down rate (T
p
to T
smax
)
6
C/second max.
6
C/second max.
6 minutes max.
8 minutes max.
Time 25
C to peak temperature
* Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
p
) is defined as a supplier minimum and a user maximum.
15
V1.0
HY1707P/M/B/I/MF/PS/PM
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm
3
Volume mm
3
Package
Thickness
<350
≥
350
<2.5 mm
235
C
220
C
220
C
2.5 mm
220
C
Table 2. Pb-free Process – Classification Temperatures (Tc)
Volume mm
3
Package
Volume mm
3
350-2000
260
C
Volume mm
3
Thickness
<1.6 mm
<350
>2000
260
C
245
C
245
C
260
C
260
C
250
C
1.6 mm – 2.5 mm
2.5 mm
250
C
245
C
Reliability Test Program
Test item
SOLDERABILITY
Method
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
Description
5 Sec, 245
C
168Hrs/500Hrs/1000Hrs, Bias@125
C
RH, 2atm, 121
C
HTRB
PCT
TCT
96 Hrs, 100
500 Cycles, -55
C~150
C
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