HUAYI-HY1906C2

HY1906C2  

Single N-Channel Enhancement Mode MOSFET  

Pin Description  

Feature  



60V/70A  

D

D D D  

D

D D D  

R

DS(ON)

= 5.7 m

Ω

(typ.)@V

GS

= 10V  







100% Avalanche Tested  

Reliable and Rugged  

Halogen- Free Devices Available  

S

S

S G  

G S S S  

Pin1  

PPAK5*6-8L  

Applications  







High Frequency Point-of-Load Synchronous Buck Converter  

Power Tool Application  

Networking DC-DC Power System  

Single N-Channel MOSFET  

Ordering and Marking Information  

Package Code  

C2: PPAK5*6-8L  

C2  

HY1906  

YYXXXLWW G  

Date Code  

YYXXX WW  

Assembly Material  

G:Halogen Free  

Note: H

UA

YI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-  

Nation finish;which are fully compliant with RoHS. H

UA

YI lead-free products meet or exceed the lead-Free require-  

ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. H

UA

YI defines

“

Green

”  

to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous  

material and total of Br and Cl does not exceed 1500ppm by weight).  

H

UA

YI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr-  

oduct and/or to this document at any time without notice.  

V1.0  

1

HY1906C2  

Absolute Maximum Ratings  

Symbol  

Parameter  

Rating  

Unit  

Common Ratings

(

T

c

=25°C Unless Otherwise Noted)  

V

DSS  

V

GSS  

T

J  

Drain-Source Voltage  

60  

±

25  

V

V

Gate-Source Voltage  

Junction

T

emperature Range  

Storage

T

emperature Range  

Source Current-Continuous(Body Diode)  

-55 to 175  

-55 to 175  

70  

°C  

°C  

A

T

STG  

I

S  

T

c

=25°C  

Mounted on Large Heat Sink  

T

c

=25°C  

T

c

=25°C  

T

c

=100°C  

T

c

=25°C  

T

c

=100°C  

260  

70  

A

A

I

DM  

Pulsed Drain Current *  

I

D  

Continuous Drain Current  

49.5  

57.7  

28.8  

2.6  

A

W

P

D  

Maximum Power Dissipation  

W

R



J

C  

R



J

A  

E

AS  

Thermal Resistance, Junction-to-Case  

Thermal Resistance, Junction-to-Ambient **  

SinglePulsed-Avalanche Energy ***  

°C/W  

°C/W  

mJ  

35  

L=0.1mH  

286.6  

Note:  

*

Repetitive rating

；

pulse width limited by max.junction temperature.  

** Surface

 

mounted on FR-4 board.  

*** Limited

 

by T

J

max , starting T

J

=25°C

, L =

0.1mH

,

R

G

=25

Ω

.,

V

GS

=10V

.  

Electrical Characteristics

(Tc =25°C Unless Otherwise Noted)  

HY1906  

Symbol  

Parameter  

Test Conditions  

Unit  

Min  

Typ.  

Max  

Static Characteristics  

V

GS

=

0V

,I

DS

=250

μ

A  

BV

DSS  

Drain-Source Breakdown Voltage  

60  

–

–

–

–

–

V

V

DS

=60V

,

V

GS

=0V  

1

μ

A  

μ

A  

I

DSS  

Drain-to-Source Leakage Current  

T

J

=125°C  

–

50  

V

DS

=V

GS

, I

DS

=250

μ

A  

V

GS(th)  

Gate Threshold Voltage  

2

3

4

V

I

GSS  

Gate-Source Leakage Current  

V

GS

=

±

25

V

,

V

DS

=0V  

–

–

–

±100  

6.5  

nA  

V

GS

=10V,I

DS

=20A  

R

DS(ON)  

Drain-Source On-State Resistance  

5.7  

m

Ω  

Diode Characteristics  

Diode Forward Voltage  

I

SD

=20A,V

GS

=0V  

V

SD

*  

t

rr  

–

–

–

0.8  

50  

95  

1.2  

V

Reverse Recovery Time  

Reverse Recovery Charge  

–

–

ns  

nC  

I

SD

=20A,dI

SD

/dt

=100A/

μs  

Q

rr  

V1.0  

2

HY1906C2  

Electrical Characteristics (Cont.)

(Tc =25°C Unless Otherwise Noted)  

HY1906  

Typ.  

Symbol  

Parameter  

Test Conditions  

Unit  

Min  

Max  

Dynamic Characteristics  

R

G  

C

iss  

C

oss  

C

rss  

t

d(ON)  

T

r  

Gate Resistance  

V

GS

=0V

,

V

DS

=0V,F=1MHz  

V

GS

=

0V

,  

–

–

–

–

–

–

–

–

0.87  

4620  

410  

360  

21  

–

–

–

–

–

–

–

–

Ω

Input Capacitance  

Output Capacitance  

Reverse Transfer Capacitance  

Turn-on Delay Time  

Turn-on Rise Time  

Turn-off Delay Time  

Turn-off Fall Time  

V

DS

=

25V

,  

pF  

Frequency=1.0MHz  

28  

V

DD

=30V,

R

G

=25

Ω,  

ns  

I

DS

=20A,V

GS

=10V  

t

d(OFF)  

T

f  

35  

31  

Gate Charge

 

Characteristics  

Q

g  

Q

gs  

Q

gd  

Total Gate Charge  

–

–

–

102  

18  

–

–

–

V

DS

=48V, V

GS

=10V,  

I

D

=20A  

nC  

Gate-Source Charge  

Gate-Drain Charge  

38  

Note: *Pulse test

，

pulse width

≤

300us

，

duty cycle

≤

2%  

V1.0  

3

HY1906C2  

Typical Operating Characteristics  

Figure 1: Power Dissipation  

Figure 2: Drain Current  

T

c

-Case

T

emperature(

℃

)  

T

c

-Case

T

emperature(

℃

)  

Figure 3: Safe Operation Area  

Figure 4: Thermal Transient Impedance  

V

DS

-Drain-Source Voltage(V)  

Maximum Effective Transient Thermal  

Impedance, Junction-to-Case  

Figure 5: Output Characteristics  

Figure 6: Drain-Source On Resistance  

V

DS

-Drain-Source Voltage (V)  

I

D

-Drain Current(A)  

V1.0  

4

HY1906C2  

Typical Operating Characteristics(Cont.)  

Figure 7: On-Resistance vs. Temperature  

Figure 8: Source-Drain Diode Forward  

Tj-Junction

T

e

mperature (

℃

)  

V

SD

-Source-Drain Voltage(V)  

Figure 9: Capacitance Characteristics  

Figure 10: Gate Charge Characteristics  

V

DS

-Drain-Source Voltage (V)  

Q

G

-Gate Charge (

nC

)  

V1.0  

5

HY1906C2  

Avalanche Test Circuit  

Switching Time Test Circuit  

Gate Charge Test Circuit  

V1.0  

6

HY1906C2  

Device Per Unit  

Package Type  

Unit  

Quantity  

PPAK5*6-8L  

Reel  

5000  

Package Information  

PPAK5*6-8L  

V1.0  

7

HY1906C2  

Classification Profile  

Classification Reflow Profiles  

Profile Feature  

Preheat & Soak  

Sn-Pb Eutectic Assembly  

Pb-Free Assembly  

100 °C  

150 °C  

150 °C  

200 °C  

Temperature min (T

smin  

)

Temperature max (T

smax  

)

60-120 seconds  

60-120 seconds  

Time (Tsmin to Tsmax) (t  

Average ramp-up rate  

s

)

3 °C/second max.  

3°C/second max.  

(T

smax

to T )  

P

Liquidous temperature (T  

Time at liquidous (t  

Peak package body Temperature  

(T )*  

Time (t  

classification temperature (T  

Average ramp-down rate (T  

Time 25°C to peak temperature  

L

)

183 °C  

217 °C  

L

)

60-150 seconds  

60-150 seconds  

See Classification Temp in table 1

 

SeeClassification Tempin table 2  

p

P

)** within 5°C of the specified  

20** seconds  

30** seconds  

c

)

p

to T

smax  

)

6 °C/second max.  

6 minutes max.  

6 °C/second max.  

8 minutes max.  

*Tolerance for peak profile Temperature (T

p

) is defined as a supplier minimum and a user maximum.  

** Tolerance for time at peak profile temperature (t  

p

) is defined as a supplier minimum and a user maximum.  

V1.0  

8

HY1906C2  

T

a

ble 1.SnPb Eutectic Process

–

Classification

T

emperatures (Tc)  

Package  

Thickness  

＜

2.5 mm  

≥2.5 mm  

Volume mm

³

 

<350  

Volume mm

³  

≥

350  

235 °C  

220 °C  

220 °C  

220 °C  

T

a

ble 2.Pb-free Process

–

Classification

T

emperatures (

T

c

)  

Package  

Thickness  

<1.6 mm  

Volume mm

³  

<350  

Volume mm

³  

350-2000  

260 °C  

Volume mm

³  

≥

2000  

260 °C  

260 °C  

1.6 mm

–

2.5 mm  

≥

2.5 mm  

260 °C  

250 °C  

245 °C  

250 °C  

245 °C  

245 °C  

Reliability Test Program  

Test item  

SOLDERABILITY  

HTRB  

Method  

Description  

JESD-22, B102  

JESD-22, A108  

JESD-22, A102  

JESD-22, A104  

5 Sec, 245°C  

168 Hrs /500 Hrs /1000 Hrs, Bias @ 150°C  

96 Hrs, 100%RH, 2atm, 121°C  

500 Cycles, -55°C~150°C  

PCT  

TCT  

Customer Service  

Worldwide Sales and Service: sales@hymexa.com  

T

e

chnical Support:

T

e

Xi’an Huayi Microelectronics Co., Ltd.  

No.8928,Shangji Road,Economic and

T

e

chnological Development Zone,Xi’an,China  

TEL: (86-029) 86685706  

FAX: (86-029) 86685705  

E-mail: sales@hymexa.com  

V1.0  

9