HUAYI-HY1906P
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HY1906P/B
N-Channel Enhancement Mode MOSFET
Features
Pin Description
,
/
·
60V 12
0
A
6.0
W
(typ.) @ V
=10V
m
R
DS(ON)
=
GS
·
·
·
Avalanch
e
R
ated
Reliable and Rugged
Lead Free an
d
G
ree
n
D
evice
s
A
vailable
(RoHS Compliant)
S
D
G
S
D
G
TO-263-2L
TO-220FB-3L
Applications
D
·
Power Management for Inverter Systems.
G
N-Channe
l
M
OSFET
S
Ordering and Marking Information
Package Code
P : TO-220FB-3L
P
B
B: TO-263-2L
HY1906
HY1906
Assembly Material
G : Lead Free Device
Date Code
YYXXX WW
ÿ
ÿ
YYXXXJWW G
YYXXXJWW G
Note:
termination finish; which are fully compliant with RoHS.
requirements of IPC/JEDEC J
–
S
T
D
-020D for MSL classification at lead-free peak reflow temperature.
lead-free products contain molding compounds/die attach materials and 100% matte tin plate
HOOYI
lead-free products meet or exceed the lead-free
HOOYI
HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
HOOYI
141225
1
HY1906P/B
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
60
±25
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
175
°C
°C
A
T
STG
I
S
-55 to 175
120
T
C
=25°C
Mounted on Large Heat Sink
I
DM
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
380**
120
80
A
A
Pulsed Drain Current *
I
D
Continuous Drain Current
188
94
P
D
Maximum Power Dissipation
W
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
0.8
R
q
JC
R
q
JA
°C/W
62.5
Avalanche Ratings
E
AS
Avalanche Energ
y
,
S
ingle Pulsed
Note
：
600***
mJ
L=0.5mH
*
Repetitive rating ; pulse width limiited by junction temperature
** Drain
current is limited by junction temperature
*** VD=48V
Electrical Characteristics
(T
C
= 25
°
C Unless Otherwise Noted)
HY1906
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
60
–
–
–
–
1
V
V
GS
=0V, I
DS
=250
m
A
V
DS
=60V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
m
A
T
J
=85°C
–
–
10
4
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
2
–
3
V
V
DS
=V
GS
, I
DS
=250
m
A
V
GS
=±25V, V
DS
=0V
–
±100
7.5
nA
*
R
DS(ON)
Drain-Source On-state Resistance
V
GS
=10V, I
DS
=60A
–
6.0
m
W
Diode Characteristics
*
V
SD
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
=60A, V
GS
=0V
–
–
–
0.8
50
95
1.2
V
t
rr
–
–
ns
nC
I
SD
=60A, dl
SD
/dt=100A/
m
s
Q
rr
2
HY1906P/B
Electrical Characteristics (Cont.)
(T
C
= 25
°
C Unless Otherwise Noted)
HY1906
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Dynamic Characteristics
b
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
–
–
–
–
–
–
–
–
1.0
4577
876
276
13
–
–
W
Input Capacitance
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
–
–
26
20
66
95
11
V
DD
=30V,
R
G
= 6
W
,
I
DS
=60A, V
G
S
=10V,
ns
t
d(OFF)
Turn-off Delay Time
T
f
Turn-off Fall Time
Gate Charge Characteristics
b
40
60
–
–
–
96
21
23
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
–
–
–
V
DS
=30V, V
GS
=10V,
I
DS
=60A
nC
Note * : Pulse test ; pulse width
£
300
m
s, duty cycle
£
2%.
3
HY1906P/B
Typical Operating Characteristics
Power Dissipation
Drain Current
120
100
80
240
limited by package
200
160
120
80
60
40
40
T
C
=25
o
C
0
T
C
=25
o
C,V
G
=10V
20
0
20 40 60 80
100 120 140 160 180 200
0
20 40 60 80
100 120 140 160 180 200
T
c
–
Temperature (°C)
T
c
–
C
ase
T
emperature (°C)
Case
Safe Operation Area
600
100
100us
1ms
Rds(on) Limit
10ms
DC
10
1
T
C
=25
o
C
0.1
0.01
1
10
100
400
V
DS
– Drain – Source Voltage (V)
Thermal Transient Impedance
10
1
Duty =
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single
Mounted on minimum pad
R
q
JA
: 62.
5
o
C/W
0.001
0.1
0.0001
0.001
0.01
1
10
Square Wave Pulse Duration (sec)
4
HY1906P/B
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
160
140
120
100
80
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
V
GS
= 7,8,9,10V
6V
5.5V
5V
V
GS
=10V
60
40
20
4.5V
4V
0
0
1
2
3
4
5
0
20
40
60
80
100
V
DS
– Drain-Source Voltage (V)
I
D
–
D
rain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
9
I
DS
=60A
I
DS
=250
m
A
8
7
6
5
4
4
5
6
7
8
9
10
-50 -25
0
25 50 75
100 125 150 175
V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
emperature (°C)
5
HY1906P/B
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
170
100
V
GS
= 10V
I
DS
= 60A
T
j
=175
o
C
10
1
T
j
=25
o
C
R
ON
@T
j
=25
o
C: 6.0m
W
0.1
-50 -25
0
25 50 75
100 125 150 175
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
j
– Junction
T
emperature (°C)
V
SD
– Source-Drain Voltage (V)
Capacitance
Gate Charge
10
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
V
DS
= 30V
I
DS
= 60A
Frequency=1MHz
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
0
0
12 24 36 48 60 72 84 96
5
10 15 20 25 30 35 40
0
V
DS
– Drain – Source Voltage (V)
Q
G
–
G
ate Charge (nC)
6
HY1906P/B
Avalanche Test Circuit and Waveforms
V
DS
L
V
DSX(SUS)
t
p
DUT
V
DS
I
AS
R
G
V
DD
V
DD
I
L
tp
E
AS
0.01
W
t
AV
Avalanche Test Circuit and Waveforms
V
DS
R
D
V
DS
DUT
90%
V
GS
R
G
V
DD
10%
V
GS
tp
t
d(on)
t
r
t
d(off)
t
f
7
HY1906P/B
Package Information
TO-220FB-3L
SYMBOL MIN
NOM
MAX
MIN
NOM
MAX
4.40
1.27
2.35
0.77
1.17
0.48
4.57 4.70 0.173 0.180
0.185
1.30 1.33 0.050 0.051
0.052
2.40 2.50 0.093 0.094
0.098
0.80 0.90 0.030 0.031
0.035
1.27 1.36 0.046 0.050
0.054
0.50 0.56 0.019 0.020
0.022
A
A1
A2
b
b2
c
15.40 15.60
15.80 0.606 0.614
0.622
D
9.00
0.05
9.80
–
9.10 9.20 0.354 0.358
0.362
0.10 0.20 0.002 0.004
0.008
10.00 10.20 0.386
0.394 0.402
D1
DEP
E
E1
E2
8.70
–
–
0.343
–
9.80
10.00 10.20 0.386
0.394 0.402
2.54 BSC
5.08 BSC
6.50 6.60
0.100 BSC
0.200 BSC
e
e1
H1
L
6.40
0.252 0.256 0.260
12.75 13.50
13.65 0.502 0.531 0.537
–
3.10 3.30
2.50 REF
–
0.122 0.130
0.098 REF
L1
L2
P
3.50
3.50
2.73
5
°
3.60 3.63
3.60 3.63
2.80 2.87
0.138 0.142 0.143
0.138 0.142 0.143
0.107 0.110 0.113
P1
Q
7
°
3
°
3
°
9
°
5
°
5
°
5
°
1
°
1
°
7
°
3
°
3
°
9
°
5
°
5
°
θ
1
θ
2
θ
3
1
°
1
°
8
HY1906P/B
TO-263-2L
MM
NOM
4.57
INCH
NOM
0.180
0.050
0.106
0.004
0.032
0.050
0.015
0.343
0.400
0.398
SYMBOL
MIN
4.40
1.22
2.59
0.00
0.77
1.20
0.34
8.60
10.00
10.00
MAX
4.70
1.32
2.79
0.20
0.90
1.36
0.47
8.80
10.26
10.20
MIN
0.173
0.048
0.102
0.000
0.030
0.047
0.013
0.339
0.394
0.394
MAX
0.185
0.052
0.110
0.008
0.035
0.054
0.019
0.346
0.404
0.402
A
A1
A2
A3
b
1.27
2.69
0.10
0.813
1.270
0.381
8.70
b1
c
D1
E
10.16
10.10
E2
e
2.5 BSC
0.100 BSC
4
H
14.70
1.17
2.00
1.45
15.10
1.27
2.30
1.55
15.50
1.40
2.60
1.70
0.579
0.046
0.079
0.057
0.594
0.050
0.091
0.061
0.610
0.055
0.102
0.067
H2
L
L1
L2
L4
2.50 REF
0.25 BSC
0.098 REF
0.010 BSC
0
°
5
°
5
°
8
°
9
°
0
°
5
°
5
°
7
°
8
°
1
2
7
°
3
°
9
°
5
°
1
°
5
°
1
°
3
°
Φ
P1
DEP
1.40
0.05
1.50
0.10
1.60
0.20
0.055
0.002
0.059
0.004
0.063
0.008
9
HY1906P/B
Devices Per Unit
Package Type
TO-220FB-3L
Unit
Quantity
Tube
50
Classification Profile
10
HY1906P/B
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Preheat & Soak
100
°
C
150
°
C
60-120 seconds
150
°
C
200
°
C
60-120 seconds
Temperature min (T
smin
)
Temperature max (T
smax
)
Time (T
smin
to T
smax
) (t
s
)
Average ramp-up rate
(T
smax
to T
P
)
3
°
C/second max.
3
°
C/second max.
Liquidous temperature (T
L
)
Time at liquidous (t
L
)
183
°
C
60-150 seconds
217
°
C
60-150 seconds
Peak package body Temperature
(T
p
)*
See Classification Temp in table 1
20** seconds
See Classification Temp in table 2
30** seconds
Time (t
P
)** within 5
°
C of the specified
classification temperature (T
c
)
Average ramp-down rate (T
p
to T
smax
)
6
°
C/second max.
6
°
C/second max.
6 minutes max.
8 minutes max.
Time 25
°
C to peak temperature
* Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
p
) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm
3
350
Package
Thickness
Volume mm
3
<350
<2.5 mm
235
°
C
220
°
C
220
°
C
220
°
C
³
2.5 mm
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm
3
Volume mm
3
350-2000
260
°
C
Volume mm
3
<350
260
°
C
260
°
C
250
°
C
>2000
260
°
C
245
°
C
245
°
C
1.6 mm – 2.5 mm
³
2.5 mm
250
°
C
245
°
C
Reliability Test Program
Test item
SOLDERABILITY
Method
JESD-22, B102
Description
5 Sec, 245
°
C
HOLT
PCT
TCT
JESD-22, A108
JESD-22, A102
JESD-22, A104
1000 Hrs, Bias @ 125
°
C
168 Hrs, 100
%
RH, 2atm, 121
°
C
500 Cycles, -65
°
C~150
°
C
Customer Service
Worldwide Sales and Service: sales@hooyi.cc
Technical Support: Technology@hooyi.cc
Xi’an Hooyi Semiconductor Technology Co., Ltd.
East Side of 2# Plant,No.105,5th Fengcheng Road,Economic and Technological Development Zone,Xi’an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hooyi.cc
11
