HUAYI-HY19P03B
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HY19P03P/B
P-Channel Enhancement Mode MOSFET
Feature Description
Pin Description
z
-30V/-90A
R
DS(ON)
= 4.7m
Ω
(typ.)@V
GS
=-10V
R
DS(ON)
= 6.5m
Ω
(typ.)@V
GS
=-4.5V
S
D
G
z
z
z
100% avalanche tested
Reliable and Rugged
S
D
G
Lead Free and Green Devices Available
(RoHS Compliant)
TO-220FB-3L
TO-263-2L
Applications
z
z
Switching Application
Power Management for DC/DC
P-Channel MOSFET
Ordering and Marking Information
Package Code
P: TO-220FB-3L
B: TO-263-2L
P
B
HY19P03
YYXXXJWW G
HY19P03
YYXXXJWW G
Date Code
YYXXX WW
Assembly Material
G:lead Free Device
Note: H
8$<,
lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-
Nation finish;which are fully compliant with RoHS.
+8$<,
lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
+8$<,
defines
“
Green
”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
+8$<,
reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
ꢀ
–
oduct and/or to this document at any time without notice.
V1.0
1
HY19P03P/B
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(
T
c
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
-30
±20
V
V
Gate-Source Voltage
Maximum Junction
T
e
mperature
Storage
T
emperature Range
Drain Current-Continuous
-55 to 150
-55 to 150
-90
°C
°C
A
T
STG
I
S
T
c
=25°C
Mounted on Large Heat Sink
T
c
=25°C
T
c
=25°C
T
c
=100°C
T
c
=25°C
T
c
=100°C
-390
-90
A
A
I
DM
Pulsed Drain Current *
ID
Continuous Drain Current
-69
A
96
W
P
D
Maximum Power Dissipation
38.5
1.3
W
R
T
J
C
R
T
J
A
E
AS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient **
SinglePulsed-Avalanche Energy ***
°C/W
°C/W
mJ
62.5
218
L=0.3mH
Note:
*
Repetitive rating; pulse width limited by max junction temperature.
Surface mounted on FR-4 board.
**
*** Limited
by T
J
max , starting T
J
=25°C
, L = 0.3mH, R
G
= 25
Ω
, V
GS
=
–
10V.
Electrical Characteristics
(Tc =25°C Unless Otherwise Noted)
HY19P03
Symbol
Parameter
Test Conditions
Unit
Min
Typ
Max
Static Characteristics
V
GS
=
0V
,I
DS
=-250uA
V
DS
=
-30
V
, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
-30
–
–
–
-1
V
–
uA
uA
V
I
DSS
Drain-to-Source Leakage Current
T
J
=100°C
–
–
-50
-3.0
±100
6
V
DS
=V
GS
, I
DS
=-250uA
V
GS
=
f
20
V
,
V
DS
=0V
V
GS
=-10V,I
D
= -45A
V
GS
=-4.5V,I
D
= -45A
V
GS(th)
I
GSS
Gate Threshold Voltage
-1.0
-1.7
–
Gate-Source Leakage Current
–
–
nA
m
Ω
m
Ω
4.7
6.5
R
DS(ON)
*
Drain-Source On-state Resistance
8
Diode Characteristics
Diode Forward Voltage
I
SD
= -45A,V
GS
=0V
–
–
–
-0.82
40
-1.3
V
V
SD
*
t
rr
Reverse Recovery Time
Reverse Recovery Charge
–
–
ns
nC
I
SD
= -4
5A,
dI
/dt
=100A/us
Q
rr
74
V1.0
2
HY19P03P/B
Electrical Characteristics (Cont.)
(Tc =25°C Unless Otherwise Noted)
HY19P03
Typ
Symbol
Parameter
Test Conditions
Unit
Min
Max
Dynamic Characteristics
V
GS
=0V
,
V
DS
=0V,
Frequency=1.0MHz
R
G
Gate Resistance
–
1.84
–
Ω
Ciss
Coss
Crss
t
d(ON)
T
r
Input Capacitance
–
–
–
–
–
–
–
4787
461
323
12
–
–
–
–
–
–
–
V
GS
=0V,
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
V
DS
=-25V,
pF
Frequency=1.0MHz
16
V
DD
= -15V,
R
G
=3
Ω
,
ns
I
DS
= -45A,V
GS
=-10V
t
d(OFF)
T
f
Turn-off Delay Time
Turn-off Fall Time
75
37
Gate Charge
Characteristics
Qg
Qgs
Qgd
Total Gate Charge
–
–
–
90
7.8
–
–
–
V
DS
= -24V, V
GS
= -10V
ˈ
nC
Gate-Source Charge
Gate-Drain Charge
I
D
= -45A,
19.3
Note: *Pulse test; pulse width
≤
300us
ˈ
duty cycle
≤
2%
ꢀ
V1.0
3
HY19P03P/B
Typical Operating Characteristics
Figure 1: Power Dissipation
Figure 2: Drain Current
T
c
-Case
T
emperature(
ć
)
T
c
-Case
T
emperature(
ć
)j
Figure 3: Safe Operation Area
Figure 4: Thermal Transient Impedance
-V
DS
-Drain-Source Voltage(V)
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 5: Output Characteristics
Figure 6: Drain-Source On Resistance
-V
DS
-Drain-Source Voltage (V)
-I
D
-Drain Current(A)
V1.0
4
HY19P03P/B
Typical Operating Characteristics(Cont.)
Figure 7: On-Resistance vs. Temperature
Figure 8: Source-Drain Diode Forward
Tj-Junction
T
e
mperature (
ć
)
-V
SD
-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics
Figure 10: Gate Charge Characteristics
-V
DS
-Drain-Source Voltage (V)
Q
G
-Gate Charge (
Q&
)
V1.0
5
HY19P03P/B
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
V1.0
6
HY19P03P/B
Device Per Unit
Package Type
Unit
Quantity
TO-220FB-3L
Tube
50
Package Information
TO-220FB-3L
COMMON DIMENSIONS
mm
SYMBOL
MIN
4.37
1.25
2.20
0.70
1.17
0.40
15.10
8.80
5.50
9.70
7.00
MAX
4.77
1.45
2.60
0.95
1.47
0.65
16.10
9.40
–
A
A1
A2
b
4.57
1.30
2.40
0.80
b2
c
1.27
0.50
D
15.60
9.10
D1
D2
E
–
10.00
–
10.30
–
E3
e
2.54 BSC
5.08 BSC
6.50
e1
H1
L
6.25
12.75
–
6.85
13.80
3.40
3.80
3.00
13.50
3.10
L1
ĭ3ꢀ
Q
3.40
2.60
3.60
2.80
V1.0
7
HY19P03P/B
Device Per Unit
Package Type
Unit
Quantity
TO-263-2L
Tube
50
Package Information
TO-263-2L
COMMON DIMENSIONS
mm
SYMBOL
MIN
4.37
1.22
2.49
0
NOM
4.57
1.27
2.69
0.13
0.81
1.27
0.38
8.7
MAX
4.77
1.42
2.89
0.25
0.96
1.47
0.53
8.9
A
A1
A2
A3
b
0.7
b1
c
1.17
0.3
D1
D4
E
8.5
6.6
–
–
9.86
7.06
10.16
–
10.36
–
E5
e
2.54 BSC
15.1
1.27
2.3
H
14.7
1.07
2
15.5
1.47
2.6
H2
L
L1
L4
șꢀ
1.4
1.55
0.25 BSC
5°
1.7
0°
9°
V1.0
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HY19P03P/B
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
150 °C
200 °C
Temperature min (T
smin
)
Temperature max (T
smax
)
60-120 seconds
60-120 seconds
Time (Tsmin to Tsmax) (t
Average ramp-up rate
s
)
3 °C/second max.
3°C/second max.
(T
smax
to T
Liquidous temperature (T
Time at liquidous (t
Peak package body Temperature
(T )*
Time (t
classification temperature (T
Average ramp-down rate (T
Time 25°C to peak temperature
P
)
L
)
183 °C
217 °C
L
)
60-150 seconds
60-150 seconds
See Classification Temp in table 1
SeeClassification Tempin table 2
p
P
)** within 5°C of the specified
20** seconds
30** seconds
c
)
p
to T
smax
)
6 °C/second max.
6 minutes max.
6 °C/second max.
8 minutes max.
*Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
p
) is defined as a supplier minimum and a user maximum.
V1.0
9
HY19P03P/B
T
a
ble 1.SnPb Eutectic Process
–
Classification
T
emperatures (Tc)
Package
Thickness
˘
2.5 mm
≥
2.5 mm
Volume mm
Ϣ
<350
Volume mm
Ϣ
ı
350
235 °C
220 °C
220 °C
220 °C
T
a
ble 2.Pb-free Process
–
Classification
T
emperatures (
T
c
)
Package
Thickness
<1.6 mm
Volume mm
Ϣ
<350
Volume mm
Ϣ
350-2000
260 °C
Volume mm
Ϣ
ı
2000
260 °C
260 °C
1.6 mm
–
2.5 mm
ı
2.5 mm
260 °C
250 °C
245 °C
250 °C
245 °C
245 °C
Reliability Test Program
Test item
Method
Description
SOLDERABILITY
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
5 Sec, 245°C
168 Hrs /500 Hrs /1000 Hrs, Bias @ 150°C
96 Hrs, 100%RH, 2atm, 121°C
500 Cycles, –
5
5°C~150°C
HTRB
PCT
TCT
Customer Service
Worldwide Sales and Service: sales@hymexa.com
Xi’an Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and
T
echnological Development Zone,Xi’an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
V1.0
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