HUAYI-HY3008P

Part #HUAYI-HY3008P
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HUAYI-HY3008P
HY3008P/M/B/ MF /PL/PM  
N-Channel Enhancement Mode MOSFET  
Feature  
Pin Description  
z
80V/100A  
R

DS(ON)
= 6.6m
Ω
(typ.)@V
GS
= 10V  

S
D
G
z
z
z
100% Avalanche Tested  
Reliable and Rugged  
S
D
G
S
D
G
Lead- Free Devices Available  
(RoHS Compliant)  
TO-220FB-3L  
TO-263-2L  
TO-220FB-3M  
Applications  
S
D
z
z
Switching application  
Power management for inverter systems  
G
S
S
D
D
G
G
TO-220MF-3L  
TO-3PM-3L  
TO-3P
M
-3S  
N-Channe
l
M
OSFET  
Ordering and Marking Information  
Package Code  
P
M
B
HY3008  
HY3008 HY3008  
P :TO-220FB-3L  
B:TO-263-2L  
PM:TO-3PM-3S  
M:TO-220FB-3S  
MF:TO-220MF-3L  
PL:TO-3PM-3L  
YYXXXJWW G  
YYXXXJWW G  
YYXXXJWW G  
MF  
PM  
PL  
Date Code  
YYXXX WW  
Assembly Material  
G:Lead Free  
HY3008  
HY3008 HY3008  
YYXXXJWW G  
YYXXXJWW G  
YYXXXJWW G  
Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate Termi-  
Nation finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the lead-Free require-  
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines
 
“
Green
”  
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous  
material and total of Br and Cl does not exceed 1500ppm by weight).  
HUAYI reserves
 
the right to make changes, corrections, enhancements, modifications, and improvements to this pr  
-oduct and/or to this document at any time without notice.  
V1.0  
1

HY3008P/M/B/ MF /PL/PM  
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Unit  
Common Ratings
(
T
c
=25°C Unless Otherwise Noted)  
V

DSS  

V

GSS  

T

J  

Drain-Source Voltage  
80  
±25  
V
V
Gate-Source Voltage  
Maximum Junction
T
e
mperature  
Storage
T
emperature Range  
Source Current-Continuous(Body Diode)  
-55 to 175  
-55 to 175  
100  
°C  
°C  
A
T

STG  

I

S  

T
c
=25°C  
Mounted on Large Heat Sink  
I

DM

Pulsed Drain Current *  
T
c
=25°C  
T
c
=25°C  
T
c
=100°C  
T
c
=25°C  
T
c
=100°C  
400**  
100  
A
A
I

D  

Continuous Drain Current  
70  
A
200  
W
P

D  

Maximum Power Dissipation  
100  
W
R

T

J
C  

R

T
J
A  

E

AS  

Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient **  
SinglePulsed-Avalanche Energy ***  
0.75  
62.5  
407***  
°C/W  
°C/W  
mJ  
L=0.3 mH  
Note:  
*
Repetitive rating
˗
pulse width limited by max.junction temperature.  
** Surface
 
mounted on 1in2 FR-4 board.  
*** Limited
 
by T
J
max , starting T
J
=25°C
, L =
0.3mH
, R

G

= 25
Ω
,
V
GS
=10V
.  
Electrical Characteristics

(Tc =25°C Unless Otherwise Noted)  

HY3008  
Symbol  
Parameter  
Test Conditions  
Unit  
Min  
Typ.  
Max  
Static Characteristics  
V

GS

=
0V
,I

DS

= 250
μ
A  
BV

DSS  

Drain-Source Breakdown Voltage  
80  
–
–
–
–
1
V
V

DS

=
80
V
,
V

GS

=0V  
μ
A  
μ
A  
V
I

DSS  

Drain-to-Source Leakage Current  
T
J
=125°C  
–
–
50  
4
V
DS
=V
GS
, I

DS

= 250
μ
A  
V

GS

=
f
25
V
,
V

DS

=0V  
V

GS

= 10V,I

DS

= 50A  
V

GS(th)  

I

GSS  

Gate Threshold Voltage  
2
–
3
Gate-Source Leakage Current  
Drain-Source On-State Resistance  
–
±100  
8.5  
nA  
m
Ω  
R
DS(ON)  
–
6.6  
Diode Characteristics  
Diode Forward Voltage  
I

SD

=50A,V

GS

=0V  
–
–
–
0.8  
62  
1
–
V
V
SD  
t

rr  

Reverse Recovery Time  
Reverse Recovery Charge  
ns  
nC  
I

SD

=50A,dI

SD

/dt
=100A/
μ
s  
Q
rr  
127  
–
V1.0  
2

HY3008P/M/B/ MF /PL/PM  
Electrical Characteristics (Cont.)

(Tc =25°C Unless Otherwise Noted)  

HY3008  
Typ.  
Symbol  
Parameter  
Test Conditions  
Unit  
Min  
Max  
Dynamic Characteristics  
R

G  

C

iss  

C

oss  

C

rss  

t

d(ON)  

T

r  

Gate Resistance  
V

GS

=0V
,
V

DS

=0V,F=1MHz  
V

GS

=
0V
,  
–
–
–
–
–
–
–
1.0  
3150  
440  
199  
23  
–
–
–
–
–
–
–
–
Ω
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Turn-on Rise Time  
Turn-off Delay Time  
Turn-off Fall Time  
V

DS

=
25V
,  
pF  
Frequency=1.0MHz  
39  
V

DD

= 40V,
R

G

=3
Ω
,  
ns  
I

DS

= 50A,V

GS

= 10V  
t

d(OFF)  

T

f  

55  
33  
Gate Charge
 
Characteristics  
Q

g  

Q

gs  

Q

gd  

Total Gate Charge  
–
–
–
67  
14  
22  
–
–
–
V

DS

= 64V, V

GS

= 10V,  
I

D
s

= 50A  
nC  
Gate-Source Charge  
Gate-Drain Charge  
Note: *Pulse test
ˈ
pulse width
≤
300us
ˈ
duty cycle
≤
2%  
V1.0  
3

HY3008P/M/B/ MF /PL/PM  
Typical Operating Characteristics  
Figure 1: Power Dissipation  
Figure 2: Drain Current  
T
c
-Case
T
emperature(
ć
)  
T
c
-Case
T
emperature(
ć
)  
Figure 3: Safe Operation Area  
Figure 4: Thermal Transient Impedance  
V

DS

-Drain-Source Voltage(V)  
Maximum Effective Transient Thermal  
Impedance, Junction-to-Case  
Figure 5: Output Characteristics  
Figure 6: Drain-Source On Resistance  
V

DS

-Drain-Source Voltage (V)  
I

D

-Drain Current(A)  
V1.0  
4

HY3008P/M/B/ MF /PL/PM  
Typical Operating Characteristics(Cont.)  
Figure 7: On-Resistance vs. Temperature  
Figure 8: Source-Drain Diode Forward  
Tj-Junction
T
e
mperature (
ć
)  
V

SD

-Source-Drain Voltage(V)  
Figure 9: Capacitance Characteristics  
Figure 10: Gate Charge Characteristics  
V

DS

-Drain-Source Voltage (V)  
Q

G

-Gate Charge (
Q&
)  
V1.0  
5

HY3008P/M/B/ MF /PL/PM  
Avalanche Test Circuit  
Switching Time Test Circuit  
Gate Charge Test Circuit  
V1.0  
6

HY3008P/M/B/ MF /PL/PM  
Device Per Unit  
Package Type  
Unit  
Quantity  
TO-220FB-3L  
Tube  
50  
Package Information  
TO-220FB-3L  
COMMON DIMENSIONS  
mm  
NOM  
4.57  
SYMBOL  
MIN  
4.37  
1.25  
2.20  
0.70  
1.17  
0.40  
15.10  
8.80  
5.50  
9.70  
7.00  
MAX  
4.77  
1.45  
2.60  
0.95  
1.47  
0.65  
16.10  
9.40  
–
A
A1  
A2  
b
1.30  
2.40  
0.80  
b2  
c
1.27  
0.50  
D
15.60  
9.10  
D1  
D2  
E
–
10.00  
–
10.30  
–
E3  
e
2.54 BSC  
5.08 BSC  
6.50  
e1  
H1  
L
6.25  
12.75  
–
6.85  
13.80  
3.40  
3.80  
3.00  
13.50  
3.10  
L1  
Φ
P  
Q
3.40  
2.60  
3.60  
2.80  
V1.0  
7

HY3008P/M/B/ MF /PL/PM  
Device Per Unit  
Package Type  
Unit  
Quantity  
TO-220FB-3S  
Tube  
50  
Package Information  
TO-220FB-3S  
COMMON DIMENSIONS  
mm  
NOM  
4.57  
SYMBOL  
MIN  
4.37  
1.25  
2.20  
0.70  
1.17  
0.40  
15.10  
8.10  
5.50  
9.70  
7.00  
MAX  
4.77  
1.45  
2.60  
0.95  
1.47  
0.65  
16.10  
9.40  
–
A
A1  
A2  
b
1.30  
2.40  
0.80  
b2  
c
1.27  
0.50  
D
15.60  
9.10  
D1  
D2  
E
–
10.00  
–
10.30  
–
E3  
e
2.54 BSC  
5.08 BSC  
6.50  
e1  
H1  
L
6.25  
6.80  
–
6.85  
7.20  
3.40  
3.80  
3.00  
7.00  
L1  
Φ
P  
Q
3.10  
3.40  
2.60  
3.60  
2.80  
V1.0  
8

HY3008P/M/B/ MF /PL/PM  
Device Per Unit  
Package Type  
Unit  
Quantity  
TO-263-2L  
Reel  
50  
Package Information  
TO-263-2L  
COMMON DIMENSIONS  
mm  
NOM  
4.57  
1.27  
2.69  
0.13  
0.81  
1.27  
0.38  
8.7  
SYMBOL  
MIN  
4.37  
1.22  
2.49  
0
MAX  
4.77  
1.42  
2.89  
0.25  
0.96  
1.47  
0.53  
8.9  
A
A1  
A2  
A3  
b
0.7  
b1  
c
1.17  
0.3  
D1  
D4  
E
8.5  
6.6  
–
–
9.86  
7.06  
10.16  
–
10.36  
–
E5  
e
2.54 BSC  
15.1  
1.27  
2.3  
H
14.7  
1.07  
2
15.5  
1.47  
2.6  
H2  
L
L1  
L4  
θ
1.4  
1.55  
0.25 BSC  
5°  
1.7  
0°  
9°  
V1.0  
9

HY3008P/M/B/ MF /PL/PM  
Device Per Unit  
Package Type  
Unit  
Quantity  
TO-220MF-3L  
Tube  
50  
Package Information  
TO-220MF-3L  
COMMON DIMENSIONS  
mm  
NOM  
10.16  
4.70  
SYMBOL  
MIN  
9.96  
4.50  
2.34  
0.30  
2.56  
0.40  
1.20  
15.57  
MAX  
10.36  
4.90  
2.74  
0.60  
2.96  
0.65  
1.35  
16.17  
E
A
A1  
A2  
A4  
c
2.54  
0.45  
2.76  
0.50  
c1  
D
1.30  
15.87  
6.70REF  
2.54BSC  
12.98  
3.03  
H1  
e
L
12.68  
2.93  
3.03  
3.15  
3.15  
1.25  
1.18  
0.70  
13.28  
3.13  
3.38  
3.65  
3.45  
1.55  
1.43  
0.95  
L1  
Φ
P  
Φ
P3  
F3  
G3  
b1  
b2  
3.18  
3.45  
3.30  
1.35  
1.28  
0.80  
V1.0  
10  

HY3008P/M/B/ MF /PL/PM  
Device Per Unit  
Package Type  
Unit  
Quantity  
TO-3PM-3L  
Tube  
50  
Package Information  
TO-3PM-3L  
V1.0  
11  

HY3008P/M/B/ MF /PL/PM  
Device Per Unit  
Package Type  
Unit  
Quantity  
TO-3PM-3S  
Tube  
50  
Package Information  
TO-3PM-3S  
V1.0  
12  

HY3008P/M/B/ MF /PL/PM  
Classification Profile  
Classification Reflow Profiles  
Profile Feature  
Preheat & Soak  
Sn-Pb Eutectic Assembly  
Pb-Free Assembly  
100 °C  
150 °C  
150 °C  
200 °C  
Temperature min (T

smin  

)
Temperature max (T

smax  

)
60-120 seconds  
60-120 seconds  
Time (Tsmin to Tsmax) (t  
Average ramp-up rate  
s
)
3 °C/second max.  
3°C/second max.  
(T

smax

to T  
Liquidous temperature (T  
Time at liquidous (t  
Peak package body Temperature  
(T )*  
Time (t  
classification temperature (T  
Average ramp-down rate (T to T

smax  

Time 25°C to peak temperature  
P
)
L
)
183 °C  
217 °C  
L
)
60-150 seconds  
60-150 seconds  
See Classification Temp in table 1
 
SeeClassification Tempin table 2  
p
P
)** within 5°C of the specified  
20** seconds  
30** seconds  
c
)  
p
)
6 °C/second max.  
6 minutes max.  
6 °C/second max.  
8 minutes max.  
*Tolerance for peak profile Temperature (T

p

) is defined as a supplier minimum and a user maximum.  
** Tolerance for time at peak profile temperature (t ) is defined as a supplier minimum and a user maximum.  
p
V1.0  
13  

HY3008P/M/B/ MF /PL/PM  
T
a
ble 1.SnPb Eutectic Process
–
Classification
T
emperatures (Tc)  
Package  
Thickness  
˘
2.5 mm  
≥
2.5 mm  
Volume mm
Ϣ
 
<350  
Volume mm
Ϣ  
ı
350  
235 °C  
220 °C  
220 °C  
220 °C  
T
a
ble 2.Pb-free Process
–
Classification
T
emperatures (
T
c
)  
Package  
Thickness  
<1.6 mm  
Volume mm
Ϣ  
<350  
Volume mm
Ϣ  
350-2000  
260 °C  
Volume mm
Ϣ  
ı
2000  
260 °C  
260 °C  
1.6 mm
–
2.5 mm  
ı
2.5 mm  
260 °C  
250 °C  
245 °C  
250 °C  
245 °C  
245 °C  
Reliability Test Program  
Test item  
SOLDERABILITY  
HTRB  
Method  
Description  
JESD-22, B102  
JESD-22, A108  
JESD-22, A102  
JESD-22, A104  
5 Sec, 245°C  
168 Hrs /500 Hrs /1000 Hrs, Bias @ 150°C  
96 Hrs, 100%RH, 2atm, 121°C  
500 Cycles, -55°C~150°C  
PCT  
TCT  
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V1.0  
14