HUAYI-HY3210B
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HY3210P/B
N-Channel Enhancement Mode MOSFET
Feature
Pin Description
100V/120A
R
DS(ON)
=6.8mΩ(typ.) @V
GS
= 10V
100% Avalanche Tested
Reliable and Rugged
Lead-Free and Green Devices Available
(RoHS Compliant)
TO-220FB-3L
TO-263-2L
Applications
Power Switching application
Uninterruptible Power Supply
N-Channel MOSFET
Ordering and Marking Information
Package Code
P :TO-220FB-3L
B:TO-263-2L
P
B
HY3210
YYXXXJWWG
HY3210
YYXXXJWWG
Date Code
YYXXX WW
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi-
Nation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
V1.0
1
HY3210P/B
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(
T
c=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
V
V
100
±25
Gate-Source Voltage
Maximum Junction
T
emperature
Storage
T
emperature Range
Source Current-Continuous(Body Diode)
°C
°C
A
175
T
STG
I
S
-55 to 175
120
T
c
=25°C
Mounted on Large Heat Sink
T
c
=25°C
T
c
=25°C
T
c
=100°C
T
c
=25°C
T
c
=100°C
A
A
I
DM
Pulsed Drain Current *
480**
120
84
I
D
Continuous Drain Current
A
W
237
119
0.63
P
D
Maximum Power Dissipation
W
R
JC
R
JA
E
AS
°C/W
°C/W
mJ
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient **
Single Pulsed-Avalanche Energy ***
62.5
L=0.5mH
756***
Note:
*
**
Repetitive rating
；
pulse width limited by max. junction temperature.
Surface mounted on FR-4 board.
***
Limited by T
J
max , starting T
J
=25°C
, L =
0.5mH
, VDS=80V
,
V
GS
=10V
.
Electrical Characteristics
(Tc =25°C Unless Otherwise Noted)
HY3210
Symbol
Parameter
Test Conditions
Unit
Min
Typ.
Max
Static Characteristics
V
GS
=
0V
,I
DS
=250μA
V
DS
=1
00V,
V
GS
=0V
V
BV
DSS
Drain-Source Breakdown Voltage
100
–
–
–
1
μA
μA
V
–
I
DSS
Drain-to-Source Leakage Current
T
J
=125°C
–
2.0
–
–
10
V
DS
=V
GS
, I
DS
=250μA
V
GS
=
±
25V,V
DS
=0V
V
GS
=10V,I
DS
=60A
V
GS(th)
I
GSS
Gate Threshold Voltage
3.0
–
4.0
±100
8.5
nA
mΩ
Gate-Source Leakage Current
Drain-Source On-State Resistance
R
DS(ON)
*
–
6.8
Diode Characteristics
Diode Forward Voltage
I
SD
=60A,V
GS
=0V
V
V
SD
*
t
rr
–
–
–
0.8
46
98
1
–
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
I
SD
=60A,dI
SD
/dt
=100A/μs
Q
rr
–
V1.0
2
HY3210P/B
Electrical Characteristics (Cont.)
(Tc =25°C Unless Otherwise Noted)
HY3210
Typ.
Symbol
Parameter
Test Conditions
Unit
Min
Max
Dynamic Characteristics
V
GS
=0V
,
V
DS
=0V,F=1
MHz
–
1.7
–
R
G
Gate Resistance
Ω
C
iss
C
oss
C
rss
t
d(ON)
T
r
Input Capacitance
–
–
–
–
–
–
–
4922
902
508
23
–
–
–
–
–
–
–
V
GS
=
0V
,
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
V
DS
=
25V
,
pF
Frequency=1.0MHz
35
V
DD
=50V,
R
G
=6
Ω,
I
DS
=60A,V
GS
=10V
ns
t
d(OFF)
T
f
Turn-off Delay Time
Turn-off Fall Time
77
44
Gate Charge
Characteristics
Q
g
Q
gs
Q
gd
Total Gate Charge
–
–
–
120
17
–
–
–
V
DS
=80V, V
GS
=10V
，
nC
Gate-Source Charge
Gate-Drain Charge
I
D
=60A
28
Note: *Pulse test
，
pulse width ≤ 300us
，
duty cycle ≤ 2%
V1.0
3
HY3210P/B
Typical Operating Characteristics
Power Dissipation
Drain Current
280
240
200
160
120
80
135
120
limited by package
105
90
75
60
45
30
15
0
40
T
C
=25
o
C
T
C
=25
o
C,V
G
=10V
0
0
20 40 60 80
100 120 140 160 180 200
0
20 40
60 80
100 120
140 160 180
200
T
c
–
Temperature (°C)
T
c
–
C
ase
T
emperature (°C)
Case
Safe Operation Area
600
100
100us
1ms
Rds(on) Limit
10ms
DC
10
1
T
C
=25
o
C
0.1
0.01
0.1
1
10
100 500
V
DS
– Drain – Source Voltage (V)
Thermal Transient Impedance
1
Duty =
0.5
0.2
0.1
0.1
0.05
0.01
0.02
0.01
0.001
Single
Mounted on minimum pad
R
q
JA
: 62.5
o
C/W
0.0001
0.1
0.0001
0.001
0.01
1
10
S uare
Wave Pulse Duration
sec
V1.0
4
HY3210P/B
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
160
140
120
100
80
9.5
8.5
V
GS
= 6,7,8,9,10V
5.5V
V
GS
=10V
7.5
5V
6.5
5.5
60
4.5V
40
20
4.5
0
0
30
60
90
120
150
0
1
2
3
4
5
6
V
DS
– Drain-Source Voltage (V)
I
D
–
D
rain Current (A)
Drain-Source On Resistance
Source-Drain Diode Forward
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
160
100
V
GS
= 10V
I
DS
= 60A
T
j
=175
o
C
10
1
T
j
=25
o
C
R
ON
@T
j
=25
o
C: 6.8m
W
0.1
-50 -25
0
25 50 75
100 125 150 175
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
j
– Junction
T
emperature (°C)
V
SD
– Source-Drain Voltage (V)
V1.0
5
HY3210P/B
Typical Operating Characteristics (Cont.)
Capacitance
Gate Charge
10
9
8
7
6
5
4
3
2
1
0
11000
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
Frequency=1MHz
V
DS
= 80V
I
DS
= 60A
Ciss
Coss
Crss
5
0
10 15 20 25 30 35 40
0
15 30 45 60 75 90
105 120
V
DS
– Drain – Source Voltage (V)
Q
G
–
G
ate Charge (nC)
V1.0
6
HY3210P/B
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
V1.0
7
HY3210P/B
Device Per Unit
Package Type
TO-220FB-3L
TO-263-2L
Unit
Tube
Tube
Quantity
50
50
Package Information
TO-220FB-3L
COMMON DIMENSIONS
mm
NOM
4.57
SYMBOL
MIN
4.37
1.25
2.20
0.70
1.17
0.40
15.10
8.80
5.50
9.70
7.00
MAX
4.77
1.45
2.60
0.95
1.47
0.65
16.10
9.40
–
A
A1
A2
b
1.30
2.40
0.80
b2
c
1.27
0.50
D
15.60
9.10
D1
D2
E
–
10.00
–
10.30
–
E3
e
2.54 BSC
5.08 BSC
6.50
e1
H1
L
6.25
12.75
–
6.85
13.80
3.40
3.80
3.00
13.50
3.10
L1
ΦP
Q
3.40
2.60
3.60
2.80
V1.0
8
HY3210P/B
Package Information
TO-263-2L
COMMON DIMENSIONS
mm
SYMBOL
MIN
4.37
1.22
2.49
0
NOM
4.57
1.27
2.69
0.13
0.81
1.27
0.38
8.7
MAX
4.77
1.42
2.89
0.25
0.96
1.47
0.53
8.9
A
A1
A2
A3
b
0.7
b1
c
1.17
0.3
D1
D4
E
8.5
6.6
–
–
9.86
7.06
10.16
–
10.36
–
E5
e
2.54 BSC
15.1
1.27
2.3
H
14.7
1.07
2
15.5
1.47
2.6
H2
L
L1
L4
θ
1.4
1.55
0.25 BSC
5°
1.7
0°
9°
V1.0
9
HY3210P/B
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
150 °C
200 °C
Temperature min (T
smin
)
Temperature max (T
smax
)
60-120 seconds
60-120 seconds
Time (Tsmin to Tsmax) (t
s
)
Average ramp-up rate
3 °C/second max.
3°C/second max.
(T
smax
to T )
P
Liquidous temperature (T
Time at liquidous (t
Peak package body Temperature
(T )*
Time (t
classification temperature (T
Average ramp-down rate (T to T
smax
Time 25°C to peak temperature
L
)
183 °C
217 °C
L
)
60-150 seconds
60-150 seconds
See Classification Temp in table 1
SeeClassification Tempin table 2
p
P
)** within 5°C of the specified
20** seconds
30** seconds
c
)
p
)
6 °C/second max.
6 minutes max.
6 °C/second max.
8 minutes max.
*Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
p
) is defined as a supplier minimum and a user maximum.
V1.0
10
HY3210P/B
Table 1.SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Thickness
＜
2.5 mm
≥2.5 mm
Volume mm
³
<350
Volume mm
³
≥
350
235 °C
220 °C
220 °C
220 °C
Table 2.Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm
³
<350
Volume mm
³
350-2000
260 °C
Volume mm
³
≥
2000
260 °C
260 °C
1.6 mm – 2.5 mm
≥
2.5 mm
260 °C
250 °C
245 °C
250 °C
245 °C
245 °C
Reliability Test Program
Test item
Method
Description
SOLDERABILITY
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
5 Sec, 245°C
HTRB
PCT
168/500/1000 Hrs, Bias @ 150°C
96 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -55°C~150°C
TCT
Customer Service
Worldwide Sales and Service: sales@hymexa.com
Xi’an Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and
T
echnological Development Zone,Xi’an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
V1.0
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