HUAYI-HY3410NA2P
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HY3410NA2P
N-Channel Enhancement Mode MOSFET
Feature
Pin Description
100V/140A
R
DS(ON)
=5.7mΩ (typ.) @ V
GS
= 10V
100% Avalanche Tested
Reliable and Rugged
Lead-Free and Green Devices Available
(RoHS Compliant)
TO-220FB-3L
Applications
Power Switching application
Uninterruptible Power Supply
Motor Control
N-Channel MOSFET
Ordering and Marking Information
Package Code
P :TO-220FB-3L
P
HY3410
XYMXXXXXX
Date Code
XYMXXXXXX
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi-
Nation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
V1.0
1
HY3410NA2P
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(
T
c=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
100
±20
V
V
Gate-Source Voltage
Maximum Junction
T
emperature
Storage
T
emperature Range
Source Current-Continuous(Body Diode)
-55 to 175
-55 to 175
140
°C
°C
A
T
STG
I
S
T
c
=25°C
Mounted on Large Heat Sink
T
c
=25°C
T
c
=25°C
T
c
=100°C
T
c
=25°C
T
c
=100°C
410
140
99
A
A
I
DM
Pulsed Drain Current *
I
D
Continuous Drain Current
A
288
144
0.52
62
W
P
D
Maximum Power Dissipation
W
R
JC
R
JA
E
AS
°C/W
°C/W
mJ
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient **
Single Pulsed-Avalanche Energy ***
L=0.3mH
508.8
Note:
*
**
Repetitive rating
；
pulse width limited by max. junction temperature.
Surface mounted on FR-4 board.
***
Limited by T
J
max , starting T
J
=25°C
, L =
0.3mH
, VD
S=80V, VGS =10V
.
Electrical Characteristics
(Tc =25°C Unless Otherwise Noted)
HY3410NA2
Symbol
Parameter
Test Conditions
Unit
Min
Typ.
Max
Static Characteristics
V
GS
=
0V
,I
DS
=250μA
V
DS
=100
V,
V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
100
–
–
–
1.0
50
V
–
–
μA
μA
V
I
DSS
Drain-to-Source Leakage Current
T
J
=125°C
–
V
DS
=V
GS
, I
DS
=250μA
V
GS
=
±
20V,V
DS
=0V
V
GS
=10V,I
DS
=50A
V
GS(th)
I
GSS
Gate Threshold Voltage
2
–
3
4
Gate-Source Leakage Current
Drain-Source On-State Resistance
–
±100
7
nA
mΩ
R
DS(ON)
*
–
5.7
Diode Characteristics
Diode Forward Voltage
I
SD
=50A,V
GS
=0V
–
–
–
0.86
41.2
75
1.3
V
V
SD
*
t
rr
Reverse Recovery Time
Reverse Recovery Charge
–
–
ns
nC
I
SD
=50A,dI
SD
/dt
=100A/μs
Q
rr
V1.0
2
HY3410NA2P
Electrical Characteristics (Cont.)
(Tc =25°C Unless Otherwise Noted)
HY3410NA2
Typ.
Symbol
Parameter
Test Conditions
Unit
Min
Max
Dynamic Characteristics
R
G
C
iss
C
oss
Gate Resistance
V
GS
=0V
,
V
DS
=0V,F=1MHz
–
–
–
1.5
6835
426
–
–
–
Ω
Input Capacitance
Output Capacitance
V
GS
=
0V
,
V
DS
=
50V
,
pF
Reverse Transfer
Capacitance
Frequency=1.0MHz
C
rss
–
294
–
t
d(ON)
T
r
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
28.1
98.2
–
–
–
–
V
DD
=
50
V,
R
G
=
4Ω,
I
DS
=50A,V
GS
=10V
ns
t
d(OFF)
T
f
75.5
101.9
Gate Charge
Characteristics
Q
g
Q
gs
Q
gd
Total Gate Charge
–
–
–
133
40
–
–
–
V
DS
=50V, V
GS
=10V
，
nC
Gate-Source Charge
Gate-Drain Charge
I
D
=50A
40
Note: *Pulse test
，
pulse width ≤ 300us
，
duty cycle ≤ 2%
V1.0
3
HY3410NA2P
Typical Operating Characteristics
Figure 1: Power Dissipation
Figure 2: Drain Current
Tc-Case Temperature(
℃
)
Tc-Case Temperature(
℃
)
Figure 3: Safe Operation Area
Figure 4: Thermal Transient Impedance
V
DS
-Drain-Source Voltage(V)
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 5: Output Characteristics
Figure 6: Drain-Source On Resistance
V
DS
-Drain-Source Voltage (V)
I
D
-Drain Current(A)
V1.0
4
HY3410NA2P
Typical Operating Characteristics(Cont.)
Figure 7: On-Resistance vs. Temperature
Figure 8: Source-Drain Diode Forward
Tj-Junction
T
emperature (
℃
)
V
SD
-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics
Figure 10: Gate Charge Characteristics
V
DS
-Drain-Source Voltage (V)
Q
G
-Gate Charge (
nC
)
V1.0
5
HY3410NA2P
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
V1.0
6
HY3410NA2P
Device Per Unit
Package Type
Unit
Quantity
TO-220FB-3L
Tube
50
Package Information
TO-220FB-3L
COMMON DIMENSIONS
mm
NOM
4.57
SYMBOL
MIN
4.37
1.25
2.20
0.70
1.17
0.40
15.10
8.80
5.50
9.70
7.00
MAX
4.77
1.45
2.60
0.95
1.47
0.65
16.10
9.40
–
A
A1
A2
b
1.30
2.40
0.80
b2
c
1.27
0.50
D
15.60
9.10
D1
D2
E
–
10.00
–
10.30
–
E3
e
2.54 BSC
5.08 BSC
6.50
e1
H1
L
6.25
12.75
–
6.85
13.80
3.40
3.80
3.00
13.50
3.10
L1
ΦP
Q
3.40
2.60
3.60
2.80
V1.0
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HY3410NA2P
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
150 °C
200 °C
Temperature min (T
smin
)
Temperature max (T
smax
)
60-120 seconds
60-120 seconds
Time (Tsmin to Tsmax) (t
s
)
Average ramp-up rate
3 °C/second max.
3°C/second max.
(T
smax
to T )
P
Liquidous temperature (T
Time at liquidous (t
Peak package body Temperature
(T )*
Time (t
classification temperature (T
Average ramp-down rate (T to T
smax
Time 25°C to peak temperature
L
)
183 °C
217 °C
L
)
60-150 seconds
60-150 seconds
See Classification Temp in table 1
SeeClassification Tempin table 2
p
P
)** within 5°C of the specified
20** seconds
30** seconds
c
)
p
)
6 °C/second max.
6 minutes max.
6 °C/second max.
8 minutes max.
*Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
p
) is defined as a supplier minimum and a user maximum.
V1.0
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HY3410NA2P
Table 1.SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Thickness
＜
2.5 mm
≥2.5 mm
Volume mm
³
<350
Volume mm
³
≥
350
235 °C
220 °C
220 °C
220 °C
Table 2.Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm
³
<350
Volume mm
³
350-2000
260 °C
Volume mm
³
≥
2000
260 °C
260 °C
1.6 mm – 2.5 mm
≥
2.5 mm
260 °C
250 °C
245 °C
250 °C
245 °C
245 °C
Reliability Test Program
Test item
Method
Description
SOLDERABILITY
HTRB
JESD-22, B102
JESD-22, A108
JESD-22, A108
5 Sec, 245°C
168/500/1000 Hrs, Bias @ 150°C
168 Hrs/500hr/1000hr, V
gs
100% @ 150°C
96 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -55°C~150°C
HTGB
PCT
TCT
JESD-22, A102
JESD-22, A104
Customer Service
Worldwide Sales and Service: sales@hymexa.com
Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and
T
echnological Development Zone,Xi’an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
V1.0
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