HUAYI-HY3704P
| Part # | HUAYI-HY3704P |
Download  | HUAYI-HY3704P |
HY3704P/B
N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
40V/176A
R
DS(ON)
=
3.0
m
(typ.) @ V
GS
=10V
•
•
•
100% avalanche tested
Reliable and Rugged
S
D
G
Lead Free and Gree
n
D
evice
s
A
vailable
(RoHS Compliant)
S
D
G
TO-220FB-3L
TO-263-2L
Applications
•
•
Switching application
Power Management for
DC/DC
N-Channel MOSFET
Ordering and Marking Information
Package Code
P : TO-220FB-3L
P
B
B: TO-263-2L
HY3704
HY3704
Assembly Material
G : Lead Free Device
Date Code
YYXXX WW
YYXXXJWW G
YYXXXJWW G
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi-
Nation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines
“
Green
”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
1
V1.0
HY3704P/B
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
40
±20
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
175
°C
°C
A
T
STG
I
S
-55 to 175
176
T
C
=25°C
Mounted on Large Heat Sink
I
DM
Pulsed Drain Current *
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
648**
176
120
192
96
A
A
I
D
Continuous Drain Current
P
D
Maximum Power Dissipation
W
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
0.78
62.5
R
JC
R
JA
°C/W
Avalanche Ratings
E
AS
Avalanche Energ
y
,
S
ingle Pulsed
Note
：
L=0.5mH
1.09***
J
*
Repetitive rating ; pulse width limiited by junction temperature
** Drain
current is limited by junction temperature
*** VD=32V
Electrical Characteristics
(T
C
= 25
C Unless Otherwise Noted)
HY3704
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
40
–
–
–
1
V
V
GS
=0V, I
DS
=250
A
V
DS
=40V, V
GS
=0V
–
–
I
DSS
Zero Gate Voltage Drain Current
A
T
J
=85°C
–
10
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
R
DS(ON)
Diode Characteristics
2.0
–
3.0
–
4.0
±100
3.6
V
V
DS
=V
GS
, I
DS
=250
A
V
GS
=±20V, V
DS
=0V
nA
m
*
Drain-Source On-state Resistance
V
GS
=10V, I
DS
=8
8
A
–
3.0
V
SD
*
t
rr
Diode Forward Voltage
I
SD
=88 A, V
GS
=0V
–
–
–
0.8
28
51
1.2
V
Reverse Recovery Time
Reverse Recovery Charge
–
–
ns
nC
I
SD
=8
8
A
, dl
SD
/dt=100A/
s
Q
rr
V1.0
2
HY3704P/B
Electrical Characteristics (Cont.)
(T
C
= 25
C Unless Otherwise Noted)
HY3704
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
–
–
–
–
–
–
–
–
1.1
4427
1028
538
28
–
–
–
–
–
–
–
–
Input Capacitance
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
V
DD
=20V, R
G
=6
,
18
I
DS
=88A, V
GS
=10V,
ns
t
d(OFF)
Turn-off Delay Time
T
f
Turn-off Fall Time
Gate Charge Characteristics
42
54
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
–
–
–
122
29
–
–
–
V
DS
=32V, V
GS
=10V,
I
DS
=88A
nC
35
Note * : Pulse test ; pulse width
300
s, duty cycle
2%.
V1.0
3
HY3704P/B
Typical Operating Characteristics
Power Dissipation
Drain Current
275
187
175
250
200
150
100
50
limited by package
150
125
100
75
50
25
T
C
=25
o
C
0
T
C
=25
o
C,V
G
=10V
0
0
20 40 60 80
100 120 140 160 180 200
0
20 40 60 80
100 120 140 160 180 200
T
c
–
Temperature (°C)
T
c
–
C
ase
T
emperature (°C)
Case
Safe Operation Area
1000
100us
10ms
100
10
1ms
DC
1
0.1
1
10
100
400
V
DS
– Drain – Source Voltage (V)
Thermal Transient Impedance
1
Duty =
0.5
0.2
0.1
0.1
0.05
0.01
0.02
0.01
0.001
Single
Mounted on minimum pad
R
JA
: 62.5
o
C/W
0.0001
0.1
0.0001
0.001
0.01
1
10
Square Wave Pulse Duration (sec)
4
V1.0
HY3704P/B
Typical Operating Characteristics
(Cont.)
Drain-Source On Resistance
Output Characteristics
400
350
300
3.9
3.5
V
GS
= 5.5,6,7,8,9,10V
V
GS
=10V
5V
250
200
150
3.0
2.5
100
50
0
4.5V
4V
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0
40
80
120
160
200
V
DS
– Drain – Source Voltage (V)
I
D
–
D
rain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
8
I
DS
=88A
I
DS
=250
A
7
6
5
4
3
2
4
5
6
7
8
9
10
-50 -25
0
25 50 75
100 125 150 175
V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
emperature (°C)
5
V1.0
HY3704P/B
Typical Operating Characteristics
(Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
175
100
V
GS
= 10V
I
DS
= 88A
T
j
=175
o
C
10
1
T
j
=25
o
C
R
ON
@T
j
=25
o
C: 3.0m
0.1
-50 -25
0
25 50 75
100 125 150 175
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
j
– Junction
T
emperature (°C)
V
SD
– Source-Drain Voltage (V)
Capacitance
Gate Charge
10
9
8
7
6
5
4
3
2
1
0
12000
10500
Frequency=1MHz
V
DS
= 32V
I
DS
= 88A
9000
7500
6000
4500
3000
1500
0
Ciss
Coss
Crss
0
25
50
75
100
125
0
8
16
24
32
40
V
DS
– Drain – Source Voltage (V)
Q
G
–
G
ate Charge (nC)
6
V1.0
HY3704P/B
Avalanche Test Circuit
V
DS
L
V
DSX(SUS)
t
p
DUT
V
DS
I
AS
R
G
V
DD
V
DD
I
L
tp
E
AS
0.01
Ω
t
AV
Avalanche Test Circuit
V
DS
R
D
V
DS
DUT
90%
V
GS
R
G
V
DD
10%
V
GS
tp
t
d(on)
t
r
t
d(off)
t
f
7
V1.0
HY3704P/B
Package Information
TO-220FB-3L
COMMON DIMENSIONS
mm
SYMBOL
MIN
4.37
1.25
2.20
0.70
1.17
0.40
15.10
8.80
5.50
9.70
7.00
N
MAX
4.77
1.45
2.60
0.95
1.47
0.65
16.10
9.40
–
A
A1
A2
b
4.57
1.30
2.40
0.80
b2
c
1.27
0.50
D
15.60
9.10
D1
D2
E
–
10.00
–
10.30
–
E3
e
2.54 BSC
5.08 BSC
6.50
e1
H1
L
6.25
12.75
–
6.85
13.80
3.40
3.80
3.00
13.50
3.10
L1
ĭ3ꢀ
Q
3.40
2.60
3.60
2.80
8
V1.0
HY3704P/B
TO-263-2L
COMMON DIMENSIONS
mm
SYMBOL
MIN
4.37
1.22
2.49
0
N
MAX
4.77
1.42
2.89
0.25
0.96
1.47
0.53
8.9
A
A1
A2
A3
b
4.57
1.27
2.69
0.13
0.81
1.27
0.38
8.7
0.7
b1
c
1.17
0.3
D1
D4
E
8.5
6.6
–
–
9.86
7.06
10.16
–
10.36
–
E5
e
2.54 BSC
15.1
1.27
2.3
H
14.7
1.07
2
15.5
1.47
2.6
H2
L
L1
L4
șꢀ
1.4
1.55
0.25 BSC
5°
1.7
0°
9°
V1.0
9
HY3704P/B
Devices Per Unit
Package Type
TO-220FB-3L
TO-263-2L
Unit
Tube
Tube
Quantity
50
50
Classification Profile
10
V1.0
HY3704P/B
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Preheat & Soak
100
C
150
C
60-120 seconds
150
C
200
C
60-120 seconds
Temperature min (T
smin
)
Temperature max (T
smax
)
Time (T
smin
to T
smax
) (t
s
)
Average ramp-up rate
(T
smax
to T
P
)
3
C/second max.
3
C/second max.
Liquidous temperature (T
L
)
Time at liquidous (t
L
)
183
C
60-150 seconds
217
C
60-150 seconds
Peak package body Temperature
(T
p
)*
See Classification Temp in table 1
20** seconds
See Classification Temp in table 2
30** seconds
Time (t
P
)** within 5
C of the specified
classification temperature (T
c
)
Average ramp-down rate (T
p
to T
smax
)
6
C/second max.
6
C/second max.
6 minutes max.
8 minutes max.
Time 25
C to peak temperature
* Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
p
) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm
3
Package
Thickness
Volume mm
3
<350
≥
350
<2.5 mm
235
C
220
C
220
C
2.5 mm
220
C
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm
3
Volume mm
3
350-2000
260
C
Volume mm
3
<350
260
C
260
C
250
C
>2000
260
C
245
C
245
C
1.6 mm – 2.5 mm
2.5 mm
250
C
245
C
Reliability Test Program
Test item
SOLDERABILITY
Method
Description
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
5 Sec, 245°C
HTRB
PCT
168 Hrs /500 Hrs /1000 Hrs, Bias @ 150°C
96 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -55°C~150°C
TCT
Customer Service
Worldwide Sales and Service: sales@hymexa.com
Xi’an Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and
T
e
chnological Development Zone,Xi’an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
V1.0
11
