HUAYI-HY3708P
| Part # | HUAYI-HY3708P |
Download  | HUAYI-HY3708P |
HY3708P/M/B/PS/PM
N-Channel Enhancement Mode MOSFET
Pin Description
atures
Fe
80V/170A
•
R
DS(ON)
= 3.8 m
(typ.) @ V
GS
=10V
S
D
G
S
D
•
•
•
100% avalanche tested
Reliable and Rugged
G
S
D
G
TO-220FB-3L
TO-220FB-3S
TO-263-2L
Lead Free and Gree
n
D
evice
s
A
vailable
(RoHS Compliant)
S
D
G
S
D
G
TO-3PS-3L
TO-3PM-3S
Applications
Power Management for Inverter Systems.
N-Channe
l
M
OSFET
Ordering and Marking Information
Package Code
P
M
B
P : TO-220FB-3L
B: TO-263-2L
M : TO-220FB-3
S
PS: TO-3PS-3L
HY3708
HY3708
HY3708
YYXXXJWW G
YYXXXJWW G
YYXXXJWW G
PM: TO-3PM-3S
PS
PM
Assembly Material
Date Code
HY3708
HY3708
YYXXXJWW G
YYXXXJWW G
YYXXX WW
G : Lead Free Device
Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate
Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the lead-
Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
HUAYI defines
“Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed
900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to
this pr-oduct and/or to this document at any time without notice.
V1.0
1
HY3708P/M/B/PS/PM
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
80
±25
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
175
°C
°C
A
T
STG
I
S
-55 to 175
170
T
C
=25°C
Mounted on Large Heat Sink
I
DM
Pulsed Drain Current *
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
660**
170
A
A
I
D
Continuous Drain Current
114
288
P
D
Maximum Power Dissipation
W
144
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
0.52
62.5
R
JC
R
JA
°C/W
Avalanche Ratings
E
AS
Avalanche Energ
y
,
S
ingle Pulsed
Note
：
L=0.5mH
1168***
mJ
*
Repetitive rating ; pulse width limiited by junction temperature
** Drain
current is limited by junction temperature
*** VD=64V
Electrical Characteristics
(T
C
= 25
C Unless Otherwise Noted)
HY3708
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
80
–
–
–
1
V
V
GS
=0V, I
DS
=250
A
V
DS
=80V, V
GS
=0V
–
–
I
DSS
Zero Gate Voltage Drain Current
A
T
J
=85°C
–
10
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
R
DS(ON)
Diode Characteristics
2.0
–
3.0
–
4.0
±100
5.0
V
V
DS
=V
GS
, I
DS
=250
A
V
GS
=±25V, V
DS
=0V
nA
m
*
Drain-Source On-state Resistance
V
GS
=10V, I
DS
=8
5
A
–
3.8
V
SD
*
t
rr
Diode Forward Voltage
I
SD
=85 A, V
GS
=0V
–
–
–
0.8
30
52
1.2
V
Reverse Recovery Time
Reverse Recovery Charge
–
–
ns
nC
I
SD
=8
5
A
, dl
SD
/dt=100A/
s
Q
rr
V1.0
2
HY3708P/M/B/PS/PM
Electrical Characteristics (Cont.)
(T
C
= 25
C Unless Otherwise Noted)
HY3708
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
–
–
–
–
–
–
–
–
1.8
6109
995
530
28
–
–
–
–
–
–
–
–
Input Capacitance
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
V
DD
=40V, R
G
=6
,
I
DS
=85A, V
GS
=10V,
18
ns
t
d(OFF)
Turn-off Delay Time
T
f
Turn-off Fall Time
Gate Charge Characteristics
42
54
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
–
–
–
152
25
–
–
–
V
DS
=64V, V
GS
=10V,
I
DS
=85A
nC
53
Note * : Pulse test ; pulse width
300
s, duty cycle
2%.
3
V1.0
HY3708P/M/B/PS/PM
Typical Operating Characteristics
Drain Current
Power Dissipation
350
180
160
300
250
200
150
100
50
limited by package
140
120
100
80
60
40
20
T
C
=25
o
C,V
G
=10V
T
C
=25
o
C
0
0
0
20 40 60 80
100 120 140 160 180 200
0
20 40 60 80
100 120 140 160 180 200
T
c
–
Temperature (°C)
Case
T
c
–
C
ase
T
emperature (°C)
Safe Operation Area
1000
100
10
100us
1ms
t
i
m
i
L
)
n
o
(
s
Rd
10ms
DC
1
T
C
=25
o
C
0.1
0.01
0.1
1
10
100 300
V
DS
– Drain – Source Voltage (V)
Thermal Transient Impedance
1
Duty =
0.5
0.2
0.1
0.1
0.05
0.01
0.02
0.01
0.001
Single
Mounted on minimum pad
R
JA
: 62.5
o
C/W
0.0001
0.1
0.0001
0.001
0.01
1
10
Square Wave Pulse Duration (sec)
V1.0
4
HY3708P/M/B/PS/PM
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
240
210
180
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
V
GS
= 5.5,6,7,8,9,10V
5V
150
V
GS
=10V
120
90
4.5V
4V
60
30
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0
40
80
120
160
200
V
DS
– Drain – Source Voltage (V)
I
D
–
D
rain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
14
12
10
8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
DS
=
8
5A
I
DS
=250
A
6
4
2
0
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75
100 125 150 175
V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
e
mperature (
°
C)
V1.0
5
HY3708P/M/B/PS/PM
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
200
100
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
V
GS
= 10V
I
DS
= 85A
T
j
=175
o
C
10
T
j
=25
o
C
1
R
ON
@T
j
=25
o
C: 3.8m
0.1
-50 -25
0
25 50 75
100 125 150 175
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
j
– Junction
T
emperature (
°
C)
V
SD
– Source – Drain Voltage (V)
Capacitance
Gate Charge
10
12000
Frequency=1MHz
V
DS
= 64V
DS
= 85A
9
8
7
6
5
4
3
2
1
0
I
10500
9000
7500
6000
4500
3000
1500
0
Ciss
Coss
Crss
0
32
64
96
128
160
0
8
16
24
32
40
V
DS
– Drain – Source Voltage (V)
Q
G
–
G
ate Charge (nC)
6
V1.0
HY3708P/M/B/PS/PM
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
V1.0
7
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V1.0
HY3708P/M/B/PS/PM
Classification Profile
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Preheat & Soak
100
C
150
C
60-120 seconds
150
C
200
C
60-120 seconds
Temperature min (T
smin
)
Temperature max (T
smax
)
Time (T
smin
to T
smax
) (t
s
)
Average ramp-up rate
(T
smax
to T
P
)
3
C/second max.
3
C/second max.
Liquidous temperature (T
L
)
Time at liquidous (t
L
)
183
C
60-150 seconds
217
C
60-150 seconds
Peak package body Temperature
(T
p
)*
See Classification Temp in table 1
20** seconds
See Classification Temp in table 2
30** seconds
Time (t
P
)** within 5
C of the specified
classification temperature (T
c
)
Average ramp-down rate (T
p
to T
smax
)
6
C/second max.
6
C/second max.
6 minutes max.
8 minutes max.
Time 25
C to peak temperature
* Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
p
) is defined as a supplier minimum and a user maximum.
V1.0
13
HY3708P/M/B/PS/PM
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm
3
Package
Thickness
Volume mm
3
<350
≥
350
<2.5 mm
235
C
220
C
220
C
2.5 mm
220
C
Table 2. Pb free Process
Classification Temperatures (Tc)
–
–
Package
Thickness
<1.6 mm
Volume mm
3
<350
Volume mm
3
350-2000
260
C
Volume mm
3
>2000
260
C
245
C
245
C
260
C
260
C
250
C
1.6 mm – 2.5 mm
2.5 mm
250
C
245
C
Reliability Test Program
Test item
SOLDERABILITY
Method
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
Description
5 Sec, 245
C
HTRB
PCT
TCT
168 Hrs/500 Hrs/1000 Hrs, Bias @ 12
5
C
96 Hrs, 100
RH, 2atm, 121
C
500 Cycles, -55
C~150
C
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V1.0
14
