HUAYI-HY3906W
| Part # | HUAYI-HY3906W |
Download  | HUAYI-HY3906W |
HY3906W/A
N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
60V/190A
R
DS(ON)
=
2.6
m
(typ.) @ V
GS
=10V
•
•
•
100% avalanche tested
Reliable and Rugged
Lead Free and Gree
n
D
evice
s
A
vailable
(RoHS Compliant)
S
S
D
D
G
G
TO-247
A
-3L
TO-3P-3L
Applications
Switching application
Power Management for Inverter Systems.
N Channe
l
M
OSFET
Ordering and Marking Information
Package Code
W : TO-247A-3L
A : TO-3P-3L
W
A
HY3906
HY3906
Assembly Material
G : Lead Free Device
Date Code
YYXXX WW
YYXXXJWW G
YYXXXJWW G
Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate
Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the lead-
Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
HUAYI defines
“Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed
900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to
this pr-oduct and/or to this document at any time without notice.
V1.0
1
HY3906W/A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
60
±25
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
175
°C
°C
A
T
STG
I
S
-55 to 175
190
T
C
=25°C
Mounted on Large Heat Sink
I
DM
Pulsed Drain Current *
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
720**
190
128
283
141
0.53
40
A
A
I
D
Continuous Drain Current
P
D
Maximum Power Dissipation
W
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
R
JC
R
JA
°C/W
Avalanche Ratings
E
AS
Avalanche Energ
y
,
S
ingle Pulsed
Note
：
L=0.5mH
1.3***
J
*
Repetitive rating ; pulse width limiited by junction temperature
** Drain
current is limited by junction temperature
*** VD=48V
Electrical Characteristics
(T
C
= 25
C Unless Otherwise Noted)
HY3906
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
60
–
–
–
1
V
V
GS
=0V, I
DS
=250
A
V
DS
=60V, V
GS
=0V
–
–
I
DSS
Zero Gate Voltage Drain Current
A
T
J
=85°C
–
10
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
R
DS(ON)
Diode Characteristics
2.0
–
3.0
–
4.0
±100
3.5
V
V
DS
=V
GS
, I
DS
=250
A
V
GS
=±25V, V
DS
=0V
nA
m
*
Drain-Source On-state Resistance
V
GS
=10V, I
DS
=95A
–
2.6
V
SD
*
t
rr
Diode Forward Voltage
I
SD
=95A, V
GS
=0V
–
–
–
0.8
48
72
1.2
V
Reverse Recovery Time
Reverse Recovery Charge
–
–
ns
nC
I
SD
=95A, dl
SD
/dt=100A/
s
Q
rr
V1.0
2
HY3906W/A
Electrical Characteristics (Cont.)
(T
C
= 25
C Unless Otherwise Noted)
HY3906
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
–
–
–
–
–
–
–
–
1.9
5903
1014
506
28
–
–
–
–
–
–
–
–
Input Capacitance
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
V
DD
=30V, R
G
=6
,
18
I
DS
=95A, V
=10V,
ns
GS
t
d(OFF)
Turn-off Delay Time
T
f
Turn-off Fall Time
Gate Charge Characteristics
42
54
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
–
–
–
135
24
–
–
–
V
DS
=48V, V
GS
=10V,
I
DS
=95A
nC
49
Note * : Pulse test ; pulse width
300
s, duty cycle
2%.
V1.0
3
HY3906W/A
Typical Operating Characteristics
Drain Current
Power Dissipation
225
200
350
limited by package
300
250
200
150
100
50
175
150
125
100
75
50
25
T
C
=25
o
C,V
G
=10V
T
C
=25
o
C
0
0
0
20 40 60 80
100 120 140 160 180 200
0
20 40 60 80
100 120 140 160 180 200
T
c
–
Temperature (°C)
T
c
–
C
ase
T
emperature (°C)
Case
Safe Operation Area
1000
t
i
m
i
100us
1ms
L
)
100
10
1
s(on
Rd
10ms
DC
T
C
=25
o
C
0.1
0.01
0.1
1
10
100 300
V
DS
– Drain – Source Voltage (V)
Thermal Transient Impedance
10
1
Duty =
0.5
0.2
0.1
0.05
0.1
0.02
0.01
Single
0.01
Mounted on minimum pad
R
JA
: 40
o
C/W
0.001
0.1
0.0001
0.001
0.01
1
10
Square Wave Pulse Duration (sec)
V1.0
4
HY3906W/A
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
400
350
300
V
GS
= 5.5,6,7,8,9,10V
5V
250
V
GS
=10V
200
150
100
50
0
4.5V
4V
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0
50
100
150
200
250
V
DS
– Drain – Source Voltage (V)
I
D
–
D
rain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
14
12
10
8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
DS
=250
μ
A
I
DS
= 95A
6
4
2
0
-50 -25
0
25 50 75
100 125 150
3
4
5
6
7
8
9
10
V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
e
mperature (
°
C)
V1.0
5
HY3906W/A
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
200
100
V
GS
= 10V
I
DS
= 95A
T
j
=150
o
C
10
T
j
=25
o
C
1
R
ON
@T
j
=25
o
C: 3.4m
Ω
0.1
-50 -25
0
25 50 75
100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
j
– Junction
T
emperature (
°
C)
V
SD
– Source – Drain Voltage (V)
Capacitance
Gate Charge
10
8000
7000
6000
5000
4000
3000
2000
1000
0
Frequency=1MHz
V
DS
= 48V
I
DS
= 95A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
0
30
60
90
120
150
0
8
16
24
32
40
V
DS
– Drain – Source Voltage (V)
Q
G
–
G
ate Charge (nC)
V1.0
6
HY3906W/A
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
V1.0
7
HY3906W/A
Device Per Unit
Package Type
Unit
Quantity
TO-247A-3L
Tube
30
Package Information
TO-247A
–
3
L
mm
NOM
SYMBOL
MIN
MAX
A
A1
A2
b
b2
b4
c
4.80 5.00 5.20
2.21 2.41 2.61
1.85 2.00 2.15
1.11 1.21 1.36
1.91 2.01 2.21
2.91 3.01 3.21
0.51 0.61 0.75
20.70 21.00 21.30
D
D1 16.25
16.55 16.85
15.50 15.80 16.10
E1 13.00
13.30 13.60
E
E2
E3
e
4.80 5.00 5.20
2.30 2.50 2.70
5.44BSC
L
L1
19.62 19.92 20.22
–
–
4.30
P 3.40 3.60 3.80
7.30
P1
S
–
–
6.15BSC
V1.0
8
HY3906W/A
Device Per Unit
Package Type
Unit
Quantity
TO-3P-3L
Tube
30
Package Information
TO-3P-3L
V1.0
9
HY3906W/A
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100
C
150
C
60-120 seconds
150
C
200
C
60-120 seconds
Temperature min (T
smin
)
Temperature max (T
smax
)
Time (T
smin
to T
smax
) (t
s
)
Average ramp-up rate
(T
smax
to T
P
)
3
C/second max.
3
C/second max.
Liquidous temperature (T
L
)
Time at liquidous (t
L
)
183
C
60-150 seconds
217
C
60-150 seconds
Peak package body Temperature
(T
p
)*
See Classification Temp in table 1
20** seconds
See Classification Temp in table 2
30** seconds
Time (t
P
)** within 5
C of the specified
classification temperature (T
c
)
Average ramp-down rate (T
p
to T
smax
)
6
C/second max.
6
C/second max.
6 minutes max.
8 minutes max.
Time 25
C to peak temperature
* Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
p
) is defined as a supplier minimum and a user maximum.
V1.0
10
HY3906W/A
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm
3
Package
Thickness
Volume mm
3
<350
≥
350
<2.5 mm
235
C
220
C
220
C
2.5 mm
220
C
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm
3
<350
Volume mm
3
350-2000
260
C
Volume mm
3
>2000
260
C
245
C
245
C
260
C
260
C
250
C
1.6 mm – 2.5 mm
2.5 mm
250
C
245
C
Reliability Test Program
Test item
SOLDERABILITY
Method
JESD-22, B102
Description
5 Sec, 245°C
HTRB
PCT
JESD-22, A108
JESD-22, A102
JESD-22, A104
168 Hrs /500 Hrs /1000 Hrs, Bias @ 150°C
96Hrs, 100%RH, 2atm, 121°C
500 Cycles, -55°C~150°C
TCT
Customer Service
Worldwide Sales and Service: sales@hymexa.com
Xi’an Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and
T
echnological Development Zone,Xi’an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
V1.0
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