HUAYI-HY4008B
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HY4008P/M/B/PS/PM
N-Channel Enhancement Mode MOSFET
Pin Description
eatures
F
80V/200A
·
R
DS(ON)
= 2.9 m
W
(typ.) @ V
GS
=10V
S
D
·
·
·
S
100% avalanche tested
D
G
G
S
D
Reliable and Rugged
G
TO-220FB-3M
TO-220FB-3L
TO-263-2L
Lead Free an
d
G
ree
n
D
evice
s
A
vailable
(RoHS Compliant)
S
D
G
S
D
G
pplications
A
TO-3PS-3L
TO-3PS-3M
D
Switching application
·
·
Power Management for Inverter Systems.
G
N-Channe
l
M
OSFET
S
Ordering and Marking Information
Package Code
P
M
B
P : TO-220FB-3L
B: TO-263-2L
M : TO-220FB-3M
PS: TO-3PS-3L
HY4008
HY4008
HY4008
ÿ
ÿ
ÿ
YYXXXJWW G
YYXXXJWW G
YYXXXJWW G
PM: TO-3PS-3M
PS
PM
Assembly Material
Date Code
HY4008
HY4008
ÿ
ÿ
YYXXXJWW G
YYXXXJWW G
YYXXX WW
G : Lead Free Device
Note:
lead-free products contain molding compounds/die attach materials and 100% matte tin plate
HOOYI
termination finish; which are fully compliant with RoHS.
lead-free products meet or exceed the lead-free
HOOYI
requirements of IPC/JEDEC J
–
S
T
D
-020D for MSL classification at lead-free peak reflow temperature.
HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
HOOYI
141225
1
HY4008P/M/B/PS/PM
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
80
±25
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
175
°C
°C
A
T
STG
I
S
-55 to 175
200
T
C
=25°C
Mounted on Large Heat Sink
I
DM
Pulsed Drain Current *
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
790**
200
A
A
I
D
Continuous Drain Current
144
345
P
D
Maximum Power Dissipation
W
173
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
0.43
62.5
R
q
JC
R
q
JA
°C/W
Avalanche Ratings
E
AS
Avalanche Energ
y
,
S
ingle Pulsed
Note
：
L=0.5mH
1496***
mJ
*
Repetitive rating ; pulse width limiited by junction temperature
** Drain
current is limited by junction temperature
*** VD=64V
Electrical Characteristics
(T
C
= 25
°
C Unless Otherwise Noted)
HY4008
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
80
–
–
–
1
V
V
GS
=0V, I
DS
=250
m
A
V
DS
=80V, V
GS
=0V
–
–
I
DSS
Zero Gate Voltage Drain Current
m
A
T
J
=85°C
–
10
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
R
DS(ON)
Diode Characteristics
2.0
–
3.0
–
4.0
±100
3.5
V
V
DS
=V
GS
, I
DS
=250
m
A
V
GS
=±25V, V
DS
=0V
nA
*
Drain-Source On-state Resistance
V
GS
=10V, I
DS
=100A
–
2.9
m
W
V
SD
t
rr
*
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
=100A, V
GS
=0V
–
–
–
0.8
30
52
1.2
V
–
–
ns
nC
I
SD
=100A, dl
SD
/dt=100A/
m
s
Q
rr
2
HY4008P/M/B/PS/PM
Electrical Characteristics (Cont.)
(T
C
= 25
°
C Unless Otherwise Noted)
HY4008
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
–
–
–
–
–
–
–
–
3.2
8154
1029
650
28
–
–
–
–
–
–
–
–
W
Input Capacitance
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
V
DD
=40V, R
G
=6
W
,
18
I
DS
=100A, V
=10V,
ns
GS
t
d(OFF)
Turn-off Delay Time
T
f
Turn-off Fall Time
Gate Charge Characteristics
42
54
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
–
–
–
197
31
–
–
–
V
DS
=64V, V
GS
=10V,
I
DS
=100A
nC
75
Note * : Pulse test ; pulse width
£
300
m
s, duty cycle
£
2%.
3
HY4008P/M/B/PS/PM
Typical Operating Characteristics
Power Dissipation
Drain Current
350
225
200
limited by package
300
250
200
150
100
50
175
150
125
100
75
50
25
T
C
=25
o
C,V
G
=10V
T
C
=25
o
C
0
0
0
20 40 60 80
100 120 140 160 180 200
0
20 40 60 80
100 120 140 160 180 200
T
c
–
Temperature (°C)
Case
T
c
–
C
ase
T
emperature (°C)
Safe Operation Area
1000
100
10
100us
1ms
it
m
i
L
)
n
o
(
s
d
R
10ms
DC
1
T
C
=25
o
C
0.1
0.01
0.1
1
10
100 300
V
DS
– Drain – Source Voltage (V)
Thermal Transient Impedance
1
Duty =
0.5
0.2
0.1
0.1
0.05
0.01
0.02
0.01
0.001
Single
Mounted on minimum pad
R
q
JA
: 62.5
o
C/W
0.0001
0.1
0.0001
0.001
0.01
1
10
Square Wave Pulse Duration (sec)
4
HY4008P/M/B/PS/PM
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
5.0
4.5
4.0
3.5
3.0
2.5
320
280
240
V
GS
= 5.5,6,7,8,9,10V
5V
4.5V
4V
200
V
GS
=10V
160
120
80
40
0
2.0
1.5
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0
50
100
150
200
250
V
DS
– Drain – Source Voltage (V)
I
D
–
D
rain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
14
12
10
8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
DS
=
1
00A
I
DS
=250
m
A
6
4
2
0
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75
100 125 150 175
V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
e
mperature (
°
C)
5
HY4008P/M/B/PS/PM
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
200
100
V
GS
= 10V
I
DS
= 100A
T
j
=175
o
C
10
T
j
=25
o
C
1
R
ON
@T
j
=25
o
C: 2.9m
W
-50 -25
0
25 50 75
100 125 150 175
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
j
– Junction
T
emperature (
°
C)
V
SD
– Source – Drain Voltage (V)
Capacitance
Gate Charge
10
12000
10500
Frequency=1MHz
V
DS
= 64V
I
DS
= 100A
9
8
7
6
5
4
3
2
1
0
9000
7500
6000
4500
3000
1500
0
Ciss
Coss
Crss
0
40
80
120
160
200
0
8
16
24
32
40
V
DS
– Drain – Source Voltage (V)
Q
G
–
G
ate Charge (nC)
6
HY4008P/M/B/PS/PM
Avalanche Test Circuit and Waveforms
V
DS
L
V
DSX(SUS)
t
p
DUT
V
DS
I
AS
R
G
V
DD
V
DD
I
L
tp
E
AS
0.01
W
t
AV
Avalanche Test Circuit and Waveforms
V
DS
R
D
V
DS
DUT
90%
V
GS
R
G
V
DD
10%
V
GS
tp
t
d(on)
t
r
t
d(off)
t
f
7
HY4008P/M/B/PS/PM
Package Information
TO-220FB-3L
SYMBOL MIN
NOM
MAX
MIN
NOM
MAX
4.40
1.27
2.35
0.77
1.17
0.48
4.57 4.70 0.173 0.180
0.185
1.30 1.33 0.050 0.051
0.052
2.40 2.50 0.093 0.094
0.098
0.80 0.90 0.030 0.031
0.035
1.27 1.36 0.046 0.050
0.054
0.50 0.56 0.019 0.020
0.022
A
A1
A2
b
b2
c
15.40 15.60
15.80 0.606 0.614
0.622
D
9.00
0.05
9.80
–
9.10 9.20 0.354 0.358
0.362
0.10 0.20 0.002 0.004
0.008
10.00 10.20 0.386
0.394 0.402
D1
DEP
E
E1
E2
8.70
–
–
0.343
–
9.80
10.00 10.20 0.386
0.394 0.402
2.54 BSC
5.08 BSC
6.50 6.60
0.100 BSC
0.200 BSC
e
e1
H1
L
6.40
0.252 0.256 0.260
12.75 13.50
13.65 0.502 0.531 0.537
–
3.10 3.30
2.50 REF
–
0.122 0.130
0.098 REF
L1
L2
P
3.50
3.50
2.73
5
°
3.60 3.63
3.60 3.63
2.80 2.87
0.138 0.142 0.143
0.138 0.142 0.143
0.107 0.110 0.113
P1
Q
7
°
3
°
3
°
9
°
5
°
5
°
5
°
1
°
1
°
7
°
3
°
3
°
9
°
5
°
5
°
θ
1
θ
2
θ
3
1
°
1
°
8
HY4008P/M/B/PS/PM
TO-220FB-3M
SYMBOL MIN
NOM
MAX
MIN
NOM
MAX
4.40
1.27
2.35
0.77
1.17
0.48
4.57 4.70 0.173 0.180
0.185
1.30 1.33 0.050 0.051
0.052
2.40 2.50 0.093 0.094
0.098
0.80 0.90 0.030 0.031
0.035
1.27 1.36 0.046 0.050
0.054
0.50 0.56 0.019 0.020
0.022
A
A1
A2
b
b2
c
15.40 15.60
15.80 0.606 0.614
0.622
D
9.00
0.05
9.80
–
9.10 9.20 0.354 0.358
0.362
0.10 0.20 0.002 0.004
0.008
10.00 10.20 0.386
0.394 0.402
D1
DEP
E
E1
E2
8.70
–
–
0.343
–
9.80
10.00 10.20 0.386
0.394 0.402
2.54 BSC
5.08 BSC
6.50 6.60
0.100 BSC
0.200 BSC
e
e1
H1
L
6.40
7.25
–
0.252 0.256 0.260
0.291
7.40
7.55
3.10 3.30
2.50 REF
0.285
–
0.297
0.122 0.130
0.098 REF
L1
L2
P
3.50
3.50
2.73
5
°
3.60 3.63
3.60 3.63
2.80 2.87
0.138 0.142 0.143
0.138 0.142 0.143
0.107 0.110 0.113
P1
Q
7
°
3
°
9
°
5
°
5
°
1
°
7
°
3
°
9
°
5
°
θ
1
θ
2
1
°
9
HY4008P/M/B/PS/PM
TO-263-2L
MM
NOM
4.57
INCH
NOM
0.180
0.050
0.106
0.004
0.032
0.050
0.015
0.343
0.400
0.398
SYMBOL
MIN
4.40
1.22
2.59
0.00
0.77
1.20
0.34
8.60
10.00
10.00
MAX
4.70
1.32
2.79
0.20
0.90
1.36
0.47
8.80
10.26
10.20
MIN
0.173
0.048
0.102
0.000
0.030
0.047
0.013
0.339
0.394
0.394
MAX
0.185
0.052
0.110
0.008
0.035
0.054
0.019
0.346
0.404
0.402
A
A1
A2
A3
b
1.27
2.69
0.10
0.813
1.270
0.381
8.70
b1
c
D1
E
10.16
10.10
E2
e
2.5 BSC
0.100 BSC
4
H
14.70
1.17
2.00
1.45
15.10
1.27
2.30
1.55
15.50
1.40
2.60
1.70
0.579
0.046
0.079
0.057
0.594
0.050
0.091
0.061
0.610
0.055
0.102
0.067
H2
L
L1
L2
L4
2.50 REF
0.25 BSC
0.098 REF
0.010 BSC
0
°
5
°
5
°
8
°
9
°
0
°
5
°
5
°
7
°
8
°
1
2
7
°
3
°
9
°
5
°
1
°
5
°
1
°
3
°
Φ
P1
DEP
1.40
0.05
1.50
0.10
1.60
0.20
0.055
0.002
0.059
0.004
0.063
0.008
10
HY4008P/M/B/PS/PM
TO-3PS-3L
SYMBOL MIN
NOM
MAX
3.36
1.27
1.49
3.56 3.76
1.30 1.37
1.54 1.64
0.80
0
.90
1.27 1.36
0.50 0.56
15.70 15.90
9.20 9.30
0.30 REF
A
A1
A2
b
b2
c
0.77
1.17
0.48
15.50
9.10
D
D1
D2
DEP
E
E1
E2
E3
e
0.05
9.88
7.80
6.90
9.90
0.10 0.20
10.00 10.20
8.00 8.20
7.10 7.30
10.00 10.10
2.54 BSC
5.08 BSC
e1
L
L1
P
13.25
–
13.40 13.55
3.00 3.30
6.00 REF
3.20 REF
3.57 REF
P1
P2
P3
Q
Q1
Q2
U
θ
1
θ
2
θ
3
1.40
3.93
1.60
6.80
4.00
3
°
1.50 1.60
4.00 4.07
1.70 1.80
7.00 7.20
4.20 4.40
5
°
7
°
3
°
7
°
9
°
5
°
5
°
1
°
11
HY4008P/M/B/PS/PM
TO-3PS-3M
SYMBOL MIN
NOM
MAX
3.36
1.27
1.49
3.56 3.76
1.30 1.37
1.54 1.64
0.80
0
.90
1.27 1.36
0.50 0.56
15.70 15.90
9.20 9.30
0.30 REF
A
A1
A2
b
b2
c
0.77
1.17
0.48
15.50
9.10
D
D1
D2
DEP
E
E1
E2
E3
e
0.05
9.88
7.80
6.90
9.90
0.10 0.20
10.00 10.20
8.00 8.20
7.10 7.30
10.00 10.10
2.54 BSC
5.08 BSC
e1
L
L1
P
7.25
–
7.40 7.55
3.00 3.30
6.00 REF
3.20 REF
3.57 REF
P1
P2
P3
Q
Q1
Q2
U
θ
1
θ
2
θ
3
1.40
3.93
1.60
6.80
4.00
3
°
1.50 1.60
4.00 4.07
1.70 1.80
7.00 7.20
4.20 4.40
5
°
7
°
3
°
7
°
9
°
5
°
5
°
1
°
12
HY4008P/M/B/PS/PM
Devices Per Unit
Package Type
TO-220FB-3L
TO-220FB-3M
TO-263-2L
Unit
Tube
Tube
Tube
Tube
Tube
Quantity
50
50
50
50
50
TO-3PS-3L
TO-3PS-3M
Classification Profile
13
HY4008P/M/B/PS/PM
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Preheat & Soak
100
°
C
150
°
C
60-120 seconds
150
°
C
200
°
C
60-120 seconds
Temperature min (T
smin
)
Temperature max (T
smax
)
Time (T
smin
to T
smax
) (t
s
)
Average ramp-up rate
(T
smax
to T
P
)
3
°
C/second max.
3
°
C/second max.
Liquidous temperature (T
L
)
Time at liquidous (t
L
)
183
°
C
60-150 seconds
217
°
C
60-150 seconds
Peak package body Temperature
(T
p
)*
See Classification Temp in table 1
20** seconds
See Classification Temp in table 2
30** seconds
Time (t
P
)** within 5
°
C of the specified
classification temperature (T
c
)
Average ramp-down rate (T
p
to T
smax
)
6
°
C/second max.
6
°
C/second max.
6 minutes max.
8 minutes max.
Time 25
°
C to peak temperature
* Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
p
) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm
3
350
Package
Thickness
Volume mm
3
<350
<2.5 mm
235
°
C
220
°
C
220
°
C
220
°
C
³
2.5 mm
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm
3
Volume mm
3
350-2000
260
°
C
Volume mm
3
<350
260
°
C
260
°
C
250
°
C
>2000
260
°
C
245
°
C
245
°
C
1.6 mm – 2.5 mm
³
2.5 mm
250
°
C
245
°
C
Reliability Test Program
Test item
SOLDERABILITY
Method
JESD-22, B102
Description
5 Sec, 245
°
C
HOLT
PCT
TCT
JESD-22, A108
JESD-22, A102
JESD-22, A104
1000 Hrs, Bias @ 125
°
C
168 Hrs, 100
%
RH, 2atm, 121
°
C
500 Cycles, -65
°
C~150
°
C
Customer Service
Worldwide Sales and Service: sales@hooyi.cc
Technical Support: Technology@hooyi.cc
Xi’an Hooyi Semiconductor Technology Co., Ltd.
East Side of 2# Plant,No.105,5th Fengcheng Road,Economic and Technological Development Zone,Xi’an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hooyi.cc
14
