HUAYI-HY4008B6

HY4008B6  

N-Channel Enhancement Mode MOSFET  

Feature Description  

Pin Description  

z

80V/255A  

R

DS(ON)

= 2.6m

Ω

(typ.)@V

GS

= 10V  

z

z

z

100% Avalanche Tested  

Reliable and Rugged  

Pin7  

Lead Free and Green Devices Available  

(RoHS Compliant)  

Pin1  

TO-263-6L  

Pin4  

Applications  

Pin1  

z

z

Switch application  

Brushless Motor Drive  

Pin2,3,5,6,7  

N-Channel MOSFET  

Ordering and Marking Information  

Package Code  

B6:TO-263-6L  

B6  

HY4008  

YYXXXJWW G  

Date Code  

YYXXX WW  

Assembly Material  

G:Lead Free  

Note:

HUAYI lead

-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-  

Nation finish;which are fully compliant with RoHS.

HUAYI lead

-free products meet or exceed the lead-Free require-  

ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.

HUAYI defi

nes

“

Green

”  

to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous  

material and total of Br and Cl does not exceed 1500ppm by weight).  

HUAYI

reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr  

-oduct and/or to this document at any time without notice.  

V1.0  

1

HY4008B6  

Absolute Maximum Ratings  

Symbol  

Parameter  

Rating  

Unit  

Common Ratings

(

T

c

=25°C Unless Otherwise Noted)  

V

DSS  

V

GSS  

T

J  

Drain-Source Voltage  

80  

±25  

V

V

Gate-Source Voltage  

Maximum Junction

T

e

mperature  

Storage

T

emperature Range  

Source Current-Continuous(Body Diode)  

175  

°C  

°C  

A

T

STG  

I

S  

-55 to 175  

255  

T

c

=25°C  

Mounted on Large Heat Sink  

I

DM

Pulsed Drain Current *  

T

c

=25°C  

T

c

=25°C  

T

c

=100°C  

T

c

=25°C  

T

c

=100°C  

918  

255  

180  

375  

187  

0.40  

40  

A

A

I

D  

Continuous Drain Current  

A

W

P

D  

Maximum Power Dissipation  

W

R

T

J

C  

R

T

J

A  

E

AS  

Thermal Resistance, Junction-to-Case  

Thermal Resistance, Junction-to-Ambient **  

SinglePulsed-Avalanche Energy ***  

°C/W  

°C/W  

mJ  

L=0.5mH  

1512  

Note:  

*

**  

Repetitive rating

˗

pulse width limited by max.junction temperature.  

Surface mounted on FR-4 board.  

***  

Limited by T

J

max , starting T

J

=25°C

, L =

0.5mH

, R

G

= 25

Ω

,

V

GS

=10V

.  

Electrical Characteristics

(Tc =25°C Unless Otherwise Noted)  

HY4008  

Symbol  

Parameter  

Test Conditions  

Unit  

Min  

Typ.  

Max  

Static Characteristics  

V

GS

=

0V

,I

DS

=250

μ

A  

BV

DSS  

Drain-Source Breakdown Voltage  

80  

–

–

–

–

1

V

V

DS

=

80

V

,

V

GS

=0V  

μ

A  

μ

A  

V

I

DSS  

Drain-to-Source Leakage Current  

T

J

=55°C  

–

–

5

V

DS

=V

GS

, I

DS

=250

μ

A  

V

GS

=

f

25

V

,

V

DS

=0V  

V

GS

=10V,I

DS

=110A  

V

GS(th)  

I

GSS  

Gate Threshold Voltage  

2

–

3

4

Gate-Source Leakage Current  

Drain-Source On-State Resistance  

–

±100  

3.2  

nA  

m

Ω  

R

DS(ON)

*  

–

2.6  

Diode Characteristics  

Diode Forward Voltage  

I

SD

=110A,V

GS

=0V  

–

–

–

0.8  

30  

52  

1.2  

V

V

SD

*  

t

rr  

Reverse Recovery Time  

Reverse Recovery Charge  

–

–

ns  

nC  

I

SD

=110A,dI

SD

/dt

=100A/

μ

s  

Q

rr  

V1.0  

2

HY4008B6  

Electrical Characteristics (Cont.)

(Tc =25°C Unless Otherwise Noted)  

HY4008  

Typ.  

Symbol  

Parameter  

Test Conditions  

Unit  

Min  

Max  

Dynamic Characteristics  

V

GS

=0V

,

V

DS

=0V,F=1  

MHz  

R

G  

Gate Resistance  

–

1.9  

–

Ω

C

iss  

C

oss  

C

rss  

t

d(ON)  

T

r  

Input Capacitance  

–

–

–

–

–

–

–

7457  

1217  

822  

28  

–

–

–

–

–

–

–

V

GS

=

0V

,  

Output Capacitance  

Reverse Transfer Capacitance  

Turn-on Delay Time  

Turn-on Rise Time  

V

DS

=

25V

,  

pF  

Frequency=1.0MHz  

18  

V

DD

=50V,

R

G

=6

Ω

,  

ns  

I

DS

=110A,V

GS

=10V  

t

d(OFF)  

T

f  

Turn-off Delay Time  

Turn-off Fall Time  

42  

54  

Gate Charge

 

Characteristics  

Q

g  

Q

gs  

Q

gd  

Total Gate Charge  

–

–

–

209  

33  

–

–

–

V

DS

=64V, V

GS

=10V,  

I

D

=110A  

nC  

Gate-Source Charge  

Gate-Drain Charge  

83  

Note: *Pulse test

ˈ

pulse width

≤

300us

ˈ

duty cycle

≤

2%  

V1.0  

3

HY4008B6  

Typical Operating Characteristics  

Figure 1: Power Dissipation  

Figure 2: Drain Current  

T

c

-Case

T

emperature(

ć

)  

T

c

-Case

T

emperature(

ć

)  

Figure 3: Safe Operation Area  

Figure 4: Thermal Transient Impedance  

V

DS

-Drain-Source Voltage(V)  

Maximum Effective Transient Thermal  

Impedance, Junction-to-Case  

Figure 5: Output Characteristics  

Figure 6: Drain-Source On Resistance  

V

DS

-Drain-Source Voltage (V)  

I

D

-Drain Current(A)  

V1.0  

4

HY4008B6  

Typical Operating Characteristics(Cont.)  

Figure 7: On-Resistance vs. Temperature  

Figure 8: Source-Drain Diode Forward  

=

Tj-Junction

T

e

mperature (

ć

)  

V

SD

-Source-Drain Voltage(V)  

Figure 9: Capacitance Characteristics  

Figure 10: Gate Charge Characteristics  

V

DS

-Drain-Source Voltage (V)  

Q

G

-Gate Charge (

Q&

)  

V1.0  

5

HY4008B6  

Avalanche Test Circuit and Waveforms  

Switching Time Test Circuit and Waveforms  

Gate Charge Test Circuit and Waveforms  

V1.0  

6

HY4008B6  

Device Per Unit  

Package Type  

Unit  

Quantity  

TO-263-6L  

Tube  

50  

Package Information  

TO-263-6L  

V1.0  

7

HY4008B6  

Classification Profile  

Classification Reflow Profiles  

Profile Feature  

Preheat & Soak  

Sn-Pb Eutectic Assembly  

Pb-Free Assembly  

100 °C  

150 °C  

150 °C  

200 °C  

Temperature min (T

smin  

)

Temperature max (T

smax  

)

60-120 seconds  

60-120 seconds  

Time (Tsmin to Tsmax) (t  

Average ramp-up rate  

s

)

3 °C/second max.  

3°C/second max.  

(T

smax

to T  

Liquidous temperature (T  

Time at liquidous (t  

Peak package body Temperature  

(T )*  

Time (t  

classification temperature (T  

Average ramp-down rate (T to T

smax  

Time 25°C to peak temperature  

P

)

L

)

183 °C  

217 °C  

L

)

60-150 seconds  

60-150 seconds  

See Classification Temp in table 1

 

SeeClassification Tempin table 2  

p

P

)** within 5°C of the specified  

20** seconds  

30** seconds  

c

)  

p

)

6 °C/second max.  

6 minutes max.  

6 °C/second max.  

8 minutes max.  

*Tolerance for peak profile Temperature (T

p

) is defined as a supplier minimum and a user maximum.  

** Tolerance for time at peak profile temperature (t ) is defined as a supplier minimum and a user maximum.  

p

V1.0  

8

HY4008B6  

T

a

ble 1.SnPb Eutectic Process

 

Classification

T

emperatures (Tc)  

–

Package  

Thickness  

˘

2.5 mm  

≥

2.5 mm  

Volume mm

Ϣ

 

<350  

Volume mm

Ϣ  

ı

350  

235 °C  

220 °C  

220 °C  

220 °C  

T

a

ble 2.Pb-free Process

–

Classification

T

emperatures (

T

c

)  

Package  

Thickness  

<1.6 mm  

Volume mm

Ϣ  

<350  

Volume mm

Ϣ  

350-2000  

260 °C  

Volume mm

Ϣ  

ı

2000  

260 °C  

260 °C  

1.6 mm

–

2.5 mm  

ı

2.5 mm  

260 °C  

250 °C  

245 °C  

250 °C  

245 °C  

245 °C  

Reliability Test Program  

Test item  

Method  

Description  

SOLDERABILITY  

JESD-22, B102  

JESD-22, A108  

JESD-22, A102  

JESD-22, A104  

5 Sec, 245°C  

HTRB  

PCT  

1000 Hrs, Bias @ 125°C  

168 Hrs, 100%RH, 2atm, 121°C  

500 Cycles, -65°C~150°C  

TCT  

Customer Service  

Worldwide Sales and Service: sales@hymexa.com  

T

e

chnical Support:

T

e

Xi’an Huayi Microelectronics Co., Ltd.  

No.8928,Shangji Road,Economic and

T

e

chnological Development Zone,Xi’an,China  

TEL: (86-029) 86685706  

FAX: (86-029) 86685705  

E-mail: sales@hymexa.com  

V1.0  

9