HUAYI-HY4008NA2B
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HY4008NA2P/B
N-Channel Enhancement Mode MOSFET
Feature
Pin Description
80V/200A
R
DS(ON)
=3.5 m
Ω
(typ.)@V
GS
= 10V
100% Avalanche Tested
Reliable and Rugged
Lead-Free and Green DevicesAvailable
(RoHS Compliant)
TO-220FB-3L
TO-263-2L
Applications
Switching application
Power management for inverter systems
Motor control
N-Channel MOSFET
Ordering and Marking Information
Package Code
P :TO-220FB-3L
B : TO-263-2L
P
B
HY4008
XYMXXXXXX
HY4008
XYMXXXXXX
Date Code
XYMXXXXXX
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-
Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines
“
Green
”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
V1.0
1
HY4008NA2P/B
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(
T
c
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
80
V
V
Gate-Source Voltage
±
20
Junction
T
emperature Range
Storage
T
emperature Range
Source Current-Continuous(Body Diode)
-55 to 175
-55 to 175
200
°C
°C
A
T
STG
I
S
T
c
=25°C
Mounted on Large Heat Sink
I
DM
Pulsed Drain Current *
T
c
=25°C
T
c
=25°C
T
c
=100°C
T
c
=25°C
T
c
=100°C
550
200
141.4
300
150
0.5
A
A
I
D
Continuous Drain Current
A
W
P
D
Maximum Power Dissipation
W
R
J
C
R
J
A
E
AS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient **
SinglePulsed-Avalanche Energy ***
°C/W
°C/W
mJ
62.5
762
L=0.3mH
Note:
*
Repetitive rating
；
pulse width limited by max.junction temperature.
** Surface
mounted on 1in2 FR-4 board.
*** Limited
by T
J
max , starting T
J
=25°C
, L =
0.3mH
, R
G
= 25
Ω
,
V
GS
=10V
.
Electrical Characteristics
(Tc =25°C Unless Otherwise Noted)
HY4008NA2
Symbol
Parameter
Test Conditions
Unit
Min
Typ.
Max
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=
0V
,I
DS
= 250
μ
A
V
DS
=
80
V
,
V
GS
=0V
T
J
=125°C
80
–
–
–
–
1
V
μ
A
μ
A
V
I
DSS
Drain-to-Source Leakage Current
–
–
50
4
V
DS
=V
GS
, I
DS
= 250
μ
A
V
GS
=
±
20
V
,
V
DS
=0V
V
GS
= 10V,I
DS
=80A
V
GS(th)
I
GSS
Gate Threshold Voltage
2
–
3
Gate-Source Leakage Current
Drain-Source On-State Resistance
–
±100
4
nA
m
Ω
R
DS(ON)
–
3.5
Diode Characteristics
Diode Forward Voltage
I
SD
=80A,V
GS
=0V
–
–
–
0.89
41
1.2
V
V
SD
t
rr
Reverse Recovery Time
Reverse Recovery Charge
–
–
ns
nC
I
SD
=80A,dI
SD
/dt
=100A/
μs
Q
rr
67
V1.0
2
HY4008NA2P/B
Electrical Characteristics (Cont.)
(Tc =25°C Unless Otherwise Noted)
HY4008NA2
Typ.
Symbol
Parameter
Test Conditions
Unit
Min
Max
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
Gate Resistance
V
GS
=0V
,
V
DS
=0V,F=1MHz
V
GS
=
0V
,
–
–
–
–
–
–
–
–
0.85
7980
925
580
32
–
–
–
–
–
–
–
–
Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DS
=
25V
,
pF
Frequency=1.0MHz
110
80
V
DD
=
40V
,
R
G
=4.0
Ω,
ns
I
DS
= 80A,V
GS
= 10V
t
d(OFF)
T
f
117
Gate Charge
Characteristics
Q
g
Q
gs
Q
gd
Total Gate Charge
–
–
–
161
41.5
61.5
–
–
–
V
DS
= 64V, V
GS
= 10V,
I
D
s
= 80A
nC
Gate-Source Charge
Gate-Drain Charge
Note: *Pulse test
，
pulse width
≤
300us
，
duty cycle
≤
2%
V1.0
3
HY4008NA2P/B
Typical Operating Characteristics
Figure 1: Power Dissipation
Figure 2: Drain Current
T
c
-Case
T
emperature(
℃
)
T
c
-Case
T
emperature(
℃
)
Figure 3: Safe Operation Area
Figure 4: Thermal Transient Impedance
V
DS
-Drain-Source Voltage(V)
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 5: Output Characteristics
Figure 6: Drain-Source On Resistance
V
DS
-Drain-Source Voltage (V)
I
D
-Drain Current(A)
V1.0
4
HY4008NA2P/B
Typical Operating Characteristics(Cont.)
Figure 7: On-Resistance vs. Temperature
Figure 8: Source-Drain Diode Forward
Tj-Junction
T
e
mperature (
℃
)
V
SD
-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics
Figure 10: Gate Charge Characteristics
V
DS
-Drain-Source Voltage (V)
Q
G
-Gate Charge (
nC
)
V1.0
5
HY4008NA2P/B
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
V1.0
6
HY4008NA2P/B
Device Per Unit
Package Type
Unit
Quantity
TO-220FB-3L
Tube
50
Package Information
TO-220FB-3L
COMMON DIMENSIONS
mm
NOM
4.57
SYMBOL
MIN
4.37
1.25
2.20
0.70
1.17
0.40
15.10
8.80
5.50
9.70
7.00
MAX
4.77
1.45
2.60
0.95
1.47
0.65
16.10
9.40
–
A
A1
A2
b
1.30
2.40
0.80
b2
c
1.27
0.50
D
15.60
9.10
D1
D2
E
–
10.00
–
10.30
–
E3
e
2.54 BSC
5.08 BSC
6.50
e1
H1
L
6.25
12.75
–
6.85
13.80
3.40
3.80
3.00
13.50
3.10
L1
ΦP
Q
3.40
2.60
3.60
2.80
V1.0
7
HY4008NA2P/B
Device Per Unit
Package Type
Unit
Quantity
TO-263-2L
TO-263-2L
Tube
Reel
50
800
Package Information
TO-263-2L
COMMON DIMENSIONS
mm
SYMBOL
MIN
4.37
1.22
2.49
0
NOM
4.57
1.27
2.69
0.13
0.81
1.27
0.38
8.7
MAX
4.77
1.42
2.89
0.25
0.96
1.47
0.53
8.9
A
A1
A2
A3
b
0.7
b1
c
1.17
0.3
D1
D4
E
8.5
6.6
–
–
9.86
7.06
10.16
–
10.36
–
E5
e
2.54 BSC
15.1
1.27
2.3
H
14.7
1.07
2
15.5
1.47
2.6
H2
L
L1
L4
θ
1.4
1.55
0.25 BSC
5°
1.7
0°
9°
V1.0
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HY4008NA2P/B
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
150 °C
200 °C
Temperature min (T
smin
)
Temperature max (T
smax
)
60-120 seconds
60-120 seconds
Time (Tsmin to Tsmax) (t
Average ramp-up rate
s
)
3 °C/second max.
3°C/second max.
(T
smax
to T )
P
Liquidous temperature (T
Time at liquidous (t
Peak package body Temperature
(T )*
Time (t
classification temperature (T
Average ramp-down rate (T
Time 25°C to peak temperature
L
)
183 °C
217 °C
L
)
60-150 seconds
60-150 seconds
See Classification Temp in table 1
SeeClassification Tempin table 2
p
P
)** within 5°C of the specified
20** seconds
30** seconds
c
)
p
to T
smax
)
6 °C/second max.
6 minutes max.
6 °C/second max.
8 minutes max.
*Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t ) is defined as a supplier minimum and a user maximum.
p
V1.0
9
HY4008NA2P/B
T
a
ble 1.SnPb Eutectic Process
–
Classification
T
emperatures (Tc)
Package
Thickness
＜
2.5 mm
≥2.5 mm
Volume mm
³
<350
Volume mm
³
≥
350
235 °C
220 °C
220 °C
220 °C
T
a
ble 2.Pb-free Process
–
Classification
T
emperatures (
T
c
)
Package
Thickness
<1.6 mm
Volume mm
³
<350
Volume mm
³
350-2000
260 °C
Volume mm
³
≥
2000
260 °C
260 °C
1.6 mm
–
2.5 mm
≥
2.5 mm
260 °C
250 °C
245 °C
250 °C
245 °C
245 °C
Reliability Test Program
Test item
Method
Description
SOLDERABILITY
HTRB
JESD-22, B102
JESD-22, A108
JESD-22, A108
JESD-22, A102
JESD-22, A104
5 Sec, 245°C
168/500/1000 Hrs, Bias @ 150°C
168 /500/1000 Hrs, V
gs
100% @ 150°C
96 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -55°C~150°C
HTGB
PCT
TCT
Customer Service
Worldwide Sales and Service: sales@hymexa.com
Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and
T
e
chnological Development Zone,Xi’an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
V1.0
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