HUAYI-HY4008W
| Part # | HUAYI-HY4008W |
Download  | HUAYI-HY4008W |
HY4008W/A
N-Channel Enhancement Mode MOSFET
Features
Pin Description
·
80V/200A
R
DS(ON)
= 2.9 m
W
(typ.) @ V
GS
=10V
·
·
·
100% avalanche tested
Reliable and Rugged
Lead Free an
d
G
ree
n
D
evice
s
A
vailable
(RoHS Compliant)
S
S
D
D
G
G
TO-247-3L
TO-3P-3L
Applications
D
Switching application
·
·
Power Management for Inverter Systems.
G
N-Channe
l
M
OSFET
S
Ordering and Marking Information
Package Code
W : TO-247-3L
W
A
A : TO-3P-3L
HY4008 HY4008
Date Code
Assembly Material
ÿ
ÿ
YYXXXJWW G
YYXXXJWW G
G : Lead Free Device
YYXXX WW
Note:
termination finish; which are fully compliant with RoHS.
requirements of IPC/JEDEC J
–
S
T
D
-020D for MSL classification at lead-free peak reflow temperature.
lead-free products contain molding compounds/die attach materials and 100% matte tin plate
HOOYI
lead-free products meet or exceed the lead-free
HOOYI
HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
HOOYI
141225
1
HY4008W/A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
80
±25
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
175
°C
°C
A
T
STG
I
S
-55 to 175
200
T
C
=25°C
Mounted on Large Heat Sink
I
DM
Pulsed Drain Current *
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
800**
200
153
397
199
0.38
40
A
A
I
D
Continuous Drain Current
P
D
Maximum Power Dissipation
W
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
R
q
JC
R
q
JA
°C/W
Avalanche Ratings
E
AS
Avalanche Energ
y
,
S
ingle Pulsed
Note
：
L=0.5mH
1736***
mJ
*
Repetitive rating ; pulse width limiited by junction temperature
** Drain
current is limited by junction temperature
*** VD=64V
Electrical Characteristics
(T
C
= 25
°
C Unless Otherwise Noted)
HY4008
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
80
–
–
–
1
V
V
GS
=0V, I
DS
=250
m
A
V
DS
=80V, V
GS
=0V
–
–
I
DSS
Zero Gate Voltage Drain Current
m
A
T
J
=85°C
–
10
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
R
DS(ON)
Diode Characteristics
2.0
–
3.0
–
4.0
±100
3.5
V
V
DS
=V
GS
, I
DS
=250
m
A
V
GS
=±25V, V
DS
=0V
nA
*
Drain-Source On-state Resistance
V
GS
=10V, I
DS
=100A
–
2.9
m
W
V
SD
t
rr
*
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
=100A, V
GS
=0V
–
–
–
0.8
30
52
1.2
V
–
–
ns
nC
I
SD
=100A, dl
SD
/dt=100A/
m
s
Q
rr
2
HY4008W/A
Electrical Characteristics (Cont.)
(T
C
= 25
°
C Unless Otherwise Noted)
HY4008
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
–
–
–
–
–
–
–
–
3.2
7398
1029
650
28
–
–
–
–
–
–
–
–
W
Input Capacitance
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
V
DD
=40V, R
G
=6
W
,
18
I
DS
=100A, V
=10V,
ns
GS
t
d(OFF)
Turn-off Delay Time
T
f
Turn-off Fall Time
Gate Charge Characteristics
42
54
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
–
–
–
195
31
–
–
–
V
DS
=64V, V
GS
=10V,
I
DS
=100A
nC
75
Note * : Pulse test ; pulse width
£
300
m
s, duty cycle
£
2%.
3
HY4008W/A
Typical Operating Characteristics
Power Dissipation
Drain Current
440
210
180
150
120
90
360
280
200
120
limited by package
60
30
T
C
=25
o
C
40
T
C
=25
o
C,V
G
=10V
0
0
0
20 40 60 80
100 120 140 160 180 200
0
20 40 60 80
100 120 140 160 180 200
T
C
-Case
T
emperature
(°C)
T
C
-Case
T
emperature
(°C)
Safe Operation Area
1000
100us
100
Rds(on) Limit
10ms
1ms
10
1
DC
0.1
1
10
100
400
V
DS
– Drain – Source Voltage (V)
Thermal Transient Impedance
1
Duty =
0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.001
0.01
Single
Mounted on minimum pad
o
R
:
40 C/W
q
JA
0.0001
0.1
0.0001
0.001
0.01
1
10
Square Wave Pulse Duration (sec)
4
HY4008W/A
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
320
280
240
5.0
4.5
4.0
3.5
3.0
2.5
V
GS
= 5.5,6,7,8,9,10V
200
5V
V
GS
=10V
160
120
4.5V
4V
80
40
0
2.0
1.5
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0
50
100
150
200
250
V
DS
– Drain – Source Voltage (V)
I
D
–
D
rain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
14
12
10
8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
DS
=
1
00A
I
DS
=250
m
A
6
4
2
0
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75
100 125 150 175
V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
e
mperature (
°
C)
5
HY4008W/A
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
200
100
V
GS
= 10V
I
DS
= 100A
T
j
=175
o
C
10
T
j
=25
o
C
1
R
ON
@T
j
=25
o
C: 2.9m
W
-50 -25
0
25 50 75
100 125 150 175
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
j
– Junction
T
emperature (
°
C)
V
SD
– Source – Drain Voltage (V)
Capacitance
Gate Charge
10
12000
10500
Frequency=1MHz
V
DS
= 64V
I
DS
= 100A
9
8
7
6
5
4
3
2
1
0
9000
7500
6000
4500
3000
1500
0
Ciss
Coss
Crss
0
40
80
120
160
200
0
8
16
24
32
40
V
DS
– Drain – Source Voltage (V)
Q
G
–
G
ate Charge (nC)
6
HY4008W/A
Avalanche Test Circuit and Waveforms
V
DS
L
V
DSX(SUS)
t
p
DUT
V
DS
I
AS
R
G
V
DD
V
DD
I
L
tp
E
AS
0.01
W
t
AV
Avalanche Test Circuit and Waveforms
V
DS
R
D
V
DS
DUT
90%
V
GS
R
G
V
DD
10%
V
GS
tp
t
d(on)
t
r
t
d(off)
t
f
7
HY4008W/A
Package Information
TO-247-3L
mm
NOM
SYMBOL
MIN
4.90
2.31
1.90
1.16
1.96
2.96
0.59
20.90
16.25
1.05
15.70
13.10
4.90
2.40
MAX
5.10
2.51
2.10
1.26
2.06
3.06
0.66
21.10
16.85
1.35
15.90
13.50
5.10
2.60
A
A1
A2
b
b2
b4
c
5.00
2.41
2.00
1.21
2.01
3.01
0.61
21.00
16.55
1.20
15.80
13.30
5.00
2.50
5.44BSC
0.10
19.92
–
D
D1
D2
E
E1
E2
E3
e
h
L
0.05
19.80
–
3.50
–
0.15
20.10
4.30
3.70
7.30
2.60
6.00
L1
Φ
P
Φ
P1
Φ
P2
Q
S
R
T
3.60
–
2.40
5.60
2.50
5.80
6.15BSC
0.50REF
–
9.80
10.20
1.65REF
8.00REF
12.80REF
–
T1
T2
T3
U
θ
1
θ
2
θ
3
θ
4
6.00
6
°
4
°
1
°
14
°
6.40
8
°
6
°
1.5
°
16
°
7
°
5
°
–
15
°
8
HY4008W/A
TO-3P-3L
mm
NOM
SYMBOL
MIN
4.60
1.40
1.33
0.80
2.80
1.80
0.50
19.75
13.70
MAX
5.00
1.60
1.43
1.20
3.20
2.20
0.70
20.05
14.10
A
A1
A2
b
b1
b2
c
4.80
1.50
1.38
1.00
3.00
2.00
0.60
19.90
13.90
D
D1
D2
E
E1
E2
e
12.90 REF
15.40
13.40
9.40
15.60
13.60
9.60
15.80
13.80
9.80
5.45 TYP
G
H
H1
h
4.60
40.30
23.20
0.05
4.80
40.50
23.40
0.10
5.00
40.70
23.60
0.15
L
7.40 TYP
L1
L2
L3
P
P1
P2
P3
R
Q
Q1
U
θ
1
θ
2
θ
3
9.00 TYP
11.00 TYP
1.00 REF
6.90
1.40
7.00
3.20 REF
3.50 REF
1.50 1.60
0.50 REF
5.00 REF
12.76 12.96
7.10
12.56
7.8
5
°
8
7
°
3
°
60
°
REF
8.2
9
°
5
°
1
°
9
HY4008W/A
Devices Per Unit
Package Type
TO-247-3L
TO-3P-3L
Unit
Tube
Tube
Quantity
30
30
Classification Profile
10
HY4008W/A
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Preheat & Soak
100
°
C
150
°
C
60-120 seconds
150
°
C
200
°
C
60-120 seconds
Temperature min (T
smin
)
Temperature max (T
smax
)
Time (T
smin
to T
smax
) (t
s
)
Average ramp-up rate
(T
smax
to T
P
)
3
°
C/second max.
3
°
C/second max.
Liquidous temperature (T
L
)
Time at liquidous (t
L
)
183
°
C
60-150 seconds
217
°
C
60-150 seconds
Peak package body Temperature
(T
p
)*
See Classification Temp in table 1
20** seconds
See Classification Temp in table 2
30** seconds
Time (t
P
)** within 5
°
C of the specified
classification temperature (T
c
)
Average ramp-down rate (T
p
to T
smax
)
6
°
C/second max.
6
°
C/second max.
6 minutes max.
8 minutes max.
Time 25
°
C to peak temperature
* Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
p
) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm
3
350
Package
Thickness
Volume mm
3
<350
<2.5 mm
235
°
C
220
°
C
220
°
C
220
°
C
³
2.5 mm
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm
3
Volume mm
3
350-2000
260
°
C
Volume mm
3
<350
260
°
C
260
°
C
250
°
C
>2000
260
°
C
245
°
C
245
°
C
1.6 mm – 2.5 mm
³
2.5 mm
250
°
C
245
°
C
Reliability Test Program
Test item
SOLDERABILITY
Method
JESD-22, B102
Description
5 Sec, 245
°
C
HOLT
PCT
TCT
JESD-22, A108
JESD-22, A102
JESD-22, A104
1000 Hrs, Bias @ 125
°
C
168 Hrs, 100
%
RH, 2atm, 121
°
C
500 Cycles, -65
°
C~150
°
C
Customer Service
Worldwide Sales and Service: sales@hooyi.cc
Technical Support: Technology@hooyi.cc
Xi’an Hooyi Semiconductor Technology Co., Ltd.
East Side of 2# Plant,No.105,5th Fengcheng Road,Economic and Technological Development Zone,Xi’an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hooyi.cc
11
