HUAYI-HY4504B6

HY4504B6  

N-Channel Enhancement Mode MOSFET  

Feature  

Pin Description  



40V/322A  

R

DS(ON)

= 1.5mΩ(typ.)

 

@V

GS

= 10V  







100% Avalanche Tested  

Reliable and Rugged  

Pin7  

Halogen

Free and Green Devices Available  

(RoHS Compliant)  

Pin1  

TO-263-6L  

Pin4  

Applications  









Switch application  

Brushless Motor Drive  

DC-DC  

Pin1  

Electric Power Steering  

Pin2,3,5,6,7  

N-Channel MOSFET  

Ordering and Marking Information  

Package Code  

B6:TO-263-6L  

B6  

HY4504  

YYXXXJWW G  

Date Code  

Assembly Material  

YYXXX WW  

G:

Halogen Free  

Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate  

Termi-Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-  

Free require-ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.  

HUAYI defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed  

900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).  

HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improveme nts to  

this pr-oduct and/or to this document at any time without notice.  

V1.0  

1

HY4504B6  

Absolute Maximum Ratings  

Symbol  

Parameter  

Rating  

Unit  

Common Ratings

(

T

c

=25

°

C Unless

 

Otherwise Noted)  

V

DSS  

V

GSS  

T

J  

Drain-Source Voltage  

40  

±20  

V

V

°

C  

°

C  

A

Gate-Source Voltage  

Maximum Junction

T

e

mperature  

Storage

T

emperature Range  

Source Current-Continuous(Body Diode)  

175  

T

STG  

I

S  

-55 to 175  

322  

T

c

=25°C  

T

c

=25°C  

Mounted on Large Heat Sink  

1058  

322  

228  

375  

187  

0.40  

40  

A

A

I

DM  

Pulsed Drain Current *  

T

c

=25°C  

T

c

=100°C  

T

c

=25°C  

T

c

=100°C  

I

D  

Continuous Drain Current  

A

W

P

D  

Maximum Power Dissipation  

W

R



J

C  

R



J

A  

E

AS  

Thermal Resistance, Junction-to-Case  

Thermal Resistance, Junction-to-Ambient **  

SinglePulsed-Avalanche Energy ***  

°C/W  

°C/W  

mJ  

L=1mH  

2373  

Note:  

*

Repetitive rating

；

pulse width limited by max.junction temperature.  

**  

Surface mounted on FR-4 board.  

***  

Limited by T

J

max , starting T

J

=25°C

, L =

0.3mH

, R

G

= 25

Ω

,

V

GS

=10V

.  

Electrical Characteristics

(Tc =25°C Unless Otherwise Noted)  

HY4504  

Symbol  

Parameter  

Test Conditions  

Unit  

Min  

Typ.  

Max  

Static Characteristics  

V

GS

=

0V

,I

DS

=250μA  

BV

DSS  

Drain-Source Breakdown Voltage  

40  

–

–

–

–

1

V

V

DS

=

40

V

,

V

GS

=0V  

T

J

=

12

5°C  

μA  

μA  

V

I

DSS  

Drain-to-Source Leakage Current  

–

–

50  

V

DS

=V

GS

, I

DS

=250μA  

V

GS

=

±

20

V

,

V

DS

=0V  

V

GS

=10V,I

DS

=140A  

V

GS(th)  

I

GSS  

Gate Threshold Voltage  

2

–

3

4

Gate-Source Leakage Current  

Drain-Source On-State Resistance  

–

±100  

2.0  

nA  

m

Ω

 

R

DS(ON)

*  

–

1.5  

Diode Characteristics  

Diode Forward Voltage  

I

SD

=140A,V

GS

=0V  

–

–

–

0.8  

38  

62  

1.2  

V

V

SD

*  

t

rr  

Reverse Recovery Time  

Reverse Recovery Charge  

–

–

ns  

nC  

I

SD

=140A,dI

SD

/dt

=100A/μs  

Q

rr  

V1.0  

2

HY4504B6  

Electrical Characteristics (Cont.)

(Tc =25°C Unless Otherwise Noted)  

HY4504  

Typ.  

Symbol  

Parameter  

Test Conditions  

Unit  

Min  

Max  

Dynamic Characteristics  

V

GS

=0V

,

V

DS

=0V,  

F=1 MHz  

R

G  

Gate Resistance  

–

2.2  

–

Ω

C

iss  

C

oss  

C

rss  

t

d(ON)  

T

r  

Input Capacitance  

–

–

–

–

–

–

–

7966  

1753  

1112  

35  

–

–

–

–

–

–

–

V

GS

=

0V

,  

Output Capacitance  

Reverse Transfer Capacitance  

Turn-on Delay Time  

Turn-on Rise Time  

V

DS

=

25V

,  

pF  

Frequency=1.0MHz  

20  

V

DD

=20V,

R

G

=4

Ω,  

I

DS

=140A,V

GS

=10V  

ns  

t

d(OFF)  

T

f  

Turn-off Delay Time  

Turn-off Fall Time  

45  

62  

Gate Charge

 

Characteristics  

Q

g  

Q

gs  

Q

gd  

Total Gate Charge  

–

–

–

208  

33  

–

–

–

V

DS

=32V, V

GS

=10V,  

I

D

=140A  

nC  

Gate-Source Charge  

Gate-Drain Charge  

83  

Note: *Pulse test

，

pulse width ≤ 300us

，

duty cycle ≤ 2%  

V1.0  

3

HY4504B6  

Typical Operating Characteristics  

Figure 1: Power Dissipation  

Figure 2: Drain Current  

T

c

-Case

T

emperature(

℃

)  

T

c

-Case

T

emperature(

℃

)  

Figure 3: Safe Operation Area  

Figure 4: Thermal Transient Impedance  

V

DS

-Drain-Source Voltage(V)  

Maximum Effective Transient Thermal  

Impedance, Junction-to-Case  

Figure 5: Output Characteristics  

Figure 6: Drain-Source On Resistance  

V

DS

-Drain-Source Voltage (V)  

I

D

-Drain Current(A)  

V1.0  

4

HY4504B6  

Typical Operating Characteristics(Cont.)  

Figure 7: On-Resistance vs. Temperature  

Figure 8: Source-Drain Diode Forward  

Tj-Junction

T

e

mperature (

℃

)  

V

SD

-Source-Drain Voltage(V)  

Figure 9: Capacitance Characteristics  

Figure 10: Gate Charge Characteristics  

V

DS

-Drain-Source Voltage (V)  

Q

G

-Gate Charge (

nC

)  

V1.0  

5

HY4504B6  

Avalanche Test Circuit  

Switching Time Test Circuit  

Gate Charge Test Circuit  

V1.0  

6

HY4504B6  

Device Per Unit  

Package Type  

Unit  

Quantity  

TO-263-6L  

Tube  

50  

Package Information  

TO-263-6L  

V1.0  

7

HY4504B6  

Classification Profile  

Classification Reflow Profiles  

Profile Feature  

Preheat & Soak  

Sn-Pb Eutectic Assembly  

Pb-Free Assembly  

100 °C  

150 °C  

150 °C  

200 °C  

Temperature min (T

smin  

)

Temperature max (T

smax  

)

60-120 seconds  

60-120 seconds  

Time (Tsmin to Tsmax) (t  

Average ramp-up rate  

s

)

3 °C/second max.  

3°C/second max.  

(T

smax

to T )  

P

Liquidous temperature (T  

Time at liquidous (t  

Peak package body Temperature  

(T )*  

Time (t  

classification temperature (T  

Average ramp-down rate (T  

Time 25°C to peak temperature  

L

)

183 °C  

217 °C  

L

)

60-150 seconds  

60-150 seconds  

See Classification Temp in table 1

 

SeeClassification Tempin table 2  

p

P

)** within 5°C of the specified  

20** seconds  

30** seconds  

c

)

p

to T

smax  

)

6 °C/second max.  

6 minutes max.  

6 °C/second max.  

8 minutes max.  

*Tolerance for peak profile Temperature (T

p

) is defined as a supplier minimum and a user maximum.  

** Tolerance for time at peak profile temperature (t  

p

) is defined as a supplier minimum and a user maximum.  

V1.0  

8

HY4504B6  

T

a

ble 1.SnPb Eutectic Process – Classification

T

emperatures (Tc)  

Package  

Thickness  

＜

2.5 mm  

≥2.5 mm  

Volume mm

³

 

<350  

Volume mm

³  

≥

350  

235 °C  

220 °C  

220 °C  

220 °C  

T

a

ble 2.Pb-free Process – Classification

T

emperatures (

T

c

)  

Package  

Thickness  

<1.6 mm  

Volume mm

³  

<350  

Volume mm

³  

350-2000  

260 °C  

Volume mm

³  

≥

2000  

260 °C  

260 °C  

1.6 mm – 2.5 mm  

≥

2.5 mm  

260 °C  

250 °C  

245 °C  

250 °C  

245 °C  

245 °C  

Reliability Test Program  

Test item  

Method  

Description  

SOLDERABILITY  

JESD-22, B102  

JESD-22, A108  

JESD-22, A102  

JESD-22, A104  

5 Sec, 245°C  

HTRB  

PCT  

168 Hrs/500 Hrs/1000Hrs, Bias @ 150°C  

96 Hrs, 100%RH, 2atm, 121°C  

500 Cycles, -55°C~150°C  

TCT  

Customer Service  

Worldwide Sales and Service: sales@hymexa.com  

Technical Support:

 

Xi’an Huayi Microelectronics Co., Ltd.  

No.8928,Shangji Road,Economic and Technological Development Zone,Xi’an,China TEL:  

(86-029) 86685706  

FAX: (86-029) 86685705  

E-mail: sales@hymexa.com  

V1.0  

9