HUAYI-HY4903B6
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HY4903B6
N-Channel Enhancement Mode MOSFET
Feature Description
Pin Description
30V/314A
R
DS(ON)
= 1.3m
Ω
(typ.)@V
GS
= 10V
R
DS(ON)
= 1.7m
Ω
(typ.)@V
GS
= 4.5V
100% Avalanche Tested
Reliable and Rugged
Pin7
Lead Free and Green Devices Available
(RoHS Compliant)
Pin1
TO-263-6L
Pin4
Applications
Pin1
Switch application
Brushless Motor Drive
DC-DC
Pin2,3,5,6,7
Electric Power Steering
N-Channel MOSFET
Ordering and Marking Information
Package Code
B6:TO-263-6L
B6
HY4903
YYXXXJWW G
Date Code
YYXXX WW
Assembly Material
G:Lead Free
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-
Nation finish;which are fully compliant with RoHS. HOOYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HOOYI defines
“
Green
”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
V1.0
1
HY4903B6
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(
T
c
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
30
±20
V
V
Gate-Source Voltage
Maximum Junction
T
e
mperature
Storage
T
emperature Range
Source Current-Continuous(Body Diode)
175
°C
°C
A
T
STG
I
S
-55 to 175
314
T
c
=25°C
Mounted on Large Heat Sink
T
c
=25°C
T
c
=25°C
T
c
=100°C
T
c
=25°C
T
c
=100°C
1116
314
222
268
134
0.56
40
A
A
I
DM
Pulsed Drain Current *
I
D
Continuous Drain Current
A
W
P
D
Maximum Power Dissipation
W
R
J
C
R
J
A
E
AS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient **
SinglePulsed-Avalanche Energy ***
°C/W
°C/W
mJ
L=0.5mH
1190
Note:
*
**
Repetitive rating
；
pulse width limited by max.junction temperature.
Surface mounted on 1in 2 FR-4 board.
***
Limited by T
J
max , starting T
J
=25°C
, L =
0.5mH
, R
G
= 25
Ω
,
V
GS
=10V
.
Electrical Characteristics
(Tc =25°C Unless Otherwise Noted)
HY4903
Symbol
Parameter
Test Conditions
Unit
Min
Typ.
Max
Static Characteristics
V
GS
=
0V
,I
DS
=250
μ
A
BV
DSS
Drain-Source Breakdown Voltage
30
–
–
–
–
1
V
V
DS
=
30
V
,
V
GS
=0V
μ
A
μ
A
V
I
DSS
Drain-to-Source Leakage Current
T
J
=55°C
–
–
5
V
DS
=V
GS
, I
DS
=250
μ
A
V
GS
=
±
20
V
,
V
DS
=0V
V
GS
=10V,I
DS
=150A
V
GS
=4.5V,I
DS
=150A
V
GS(th)
I
GSS
Gate Threshold Voltage
1
–
2
3
Gate-Source Leakage Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
–
±100
1.7
2.5
nA
m
Ω
m
Ω
R
DS(ON)
*
R
DS(ON)
*
–
1.3
1.7
–
Diode Characteristics
Diode Forward Voltage
I
SD
=150A,V
GS
=0V
–
–
–
0.8
38
80
1.2
V
V
SD
*
t
rr
Reverse Recovery Time
Reverse Recovery Charge
–
–
ns
nC
I
SD
=150A,dI
SD
/dt
=100A/
μs
Q
rr
Electrical Characteristics (Cont.)
(Tc =25°C Unless Otherwise Noted)
V1.0
2
HY4903B6
HY4903
Typ.
Symbol
Parameter
Test Conditions
Unit
Min
Max
Dynamic Characteristics
V
GS
=0V
,
V
DS
=0V,F=1
MHz
R
G
Gate Resistance
–
2.1
–
Ω
C
iss
C
oss
C
rss
t
d(ON)
T
r
Input Capacitance
–
–
–
–
–
–
–
9417
1226
826
52
–
–
–
–
–
–
–
V
GS
=
0V
,
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
V
DS
=
25V
,
pF
Frequency=1.0MHz
120
90
V
DD
=20V,
R
G
=4
Ω,
ns
I
DS
=150A,V
GS
=10V
t
d(OFF)
T
f
Turn-off Delay Time
Turn-off Fall Time
78
Gate Charge
Characteristics
Q
g
Q
gs
Q
gd
Total Gate Charge
–
–
–
269
28
–
–
–
V
DS
=24V, V
GS
=10V,
I
D
=150A
nC
Gate-Source Charge
Gate-Drain Charge
66
Note: *Pulse test
，
pulse width
≤
300us
，
duty cycle
≤
2%
V1.0
3
HY4903B6
Typical Operating Characteristics
Figure 1: Power Dissipation
Figure 2: Drain Current
T
c
-Case
T
emperature(
℃
)
T
c
-Case
T
emperature(
℃
)
Figure 3: Safe Operation Area
Figure 4: Thermal Transient Impedance
V
DS
-Drain-Source Voltage(V)
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 5: Output Characteristics
Figure 6: Drain-Source On Resistance
V
DS
-Drain-Source Voltage (V)
I
D
-Drain Current(A)
V1.0
4
HY4903B6
Typical Operating Characteristics(Cont.)
Figure 7: On-Resistance vs. Temperature
Figure 8: Source-Drain Diode Forward
Tj-Junction
T
e
mperature (
℃
)
V
SD
-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics
Figure 10: Gate Charge Characteristics
V
DS
-Drain-Source Voltage (V)
Q
G
-Gate Charge (
nC
)
V1.0
5
HY4903B6
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Gate Charge Test Circuit and Waveforms
V1.0
6
HY4903B6
Device Per Unit
Package Type
Unit
Quantity
TO-263-6L
Tube
50
Package Information
TO-263-6L
V1.0
7
HY4903B6
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
150 °C
200 °C
Temperature min (T
smin
)
Temperature max (T
smax
)
60-120 seconds
60-120 seconds
Time (Tsmin to Tsmax) (t
Average ramp-up rate
s
)
3 °C/second max.
3°C/second max.
(T
smax
to T )
P
Liquidous temperature (T
Time at liquidous (t
Peak package body Temperature
(T )*
Time (t
classification temperature (T
Average ramp-down rate (T
Time 25°C to peak temperature
L
)
183 °C
217 °C
L
)
60-150 seconds
60-150 seconds
See Classification Temp in table 1
SeeClassification Tempin table 2
p
P
)** within 5°C of the specified
20** seconds
30** seconds
c
)
p
to T
smax
)
6 °C/second max.
6 minutes max.
6 °C/second max.
8 minutes max.
*Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
p
) is defined as a supplier minimum and a user maximum.
V1.0
8
HY4903B6
T
a
ble 1.SnPb Eutectic Process
–
Classification
T
emperatures (Tc)
Package
Thickness
＜
2.5 mm
≥2.5 mm
Volume mm
³
<350
Volume mm
³
≥
350
235 °C
220 °C
220 °C
220 °C
T
a
ble 2.Pb-free Process
–
Classification
T
emperatures (
T
c
)
Package
Thickness
<1.6 mm
Volume mm
³
<350
Volume mm
³
350-2000
260 °C
Volume mm
³
≥
2000
260 °C
260 °C
1.6 mm
–
2.5 mm
≥
2.5 mm
260 °C
250 °C
245 °C
250 °C
245 °C
245 °C
Reliability Test Program
Test item
Method
Description
SOLDERABILITY
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
5 Sec, 245°C
HTRB
PCT
1000 Hrs, Bias @ 125°C
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
TCT
Customer Service
Worldwide Sales and Service: sales@hooyi.cc
T
e
chnical Support:
technical @hooyi.cc
Xi’
an Hooyi Semiconductor
T
e
chnology Co., Ltd.
No.105,5th Fengcheng Road, Economic and
T
e
chnological Development Zone, Xi’an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hooyi.cc
V1.0
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