HUAYI-HY5110W
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HY5110W/A
N-Channel Enhancement Mode MOSFET
Features
Pin Description
·
100V/316A
2.1 m
W
(typ.) @ V
GS
=10V
R
DS(ON)
=
·
·
·
Avalanch
e
R
ated
Reliable and Rugged
Lead Free an
d
G
ree
n
D
evice
s
A
vailable
(RoHS Compliant)
S
S
D
D
G
G
TO-247-3L
TO-3P-3L
Applications
D
·
Power Management for Inverter Systems.
G
N-Channe
l
M
OSFET
S
Ordering and Marking Information
Package Code
W : TO-247-3L
W
A
A : TO-3P-3L
HY5110 HY5110
Assembly Material
Date Code
ÿ
ÿ
YYXXXJWW G
YYXXXJWW G
G : Lead Free Device
YYXXX WW
Note:
termination finish; which are fully compliant with RoHS.
requirements of IPC/JEDEC J
–
S
T
D
-020D for MSL classification at lead-free peak reflow temperature.
lead-free products contain molding compounds/die attach materials and 100% matte tin plate
HOOYI
lead-free products meet or exceed the lead-free
HOOYI
HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
HOOYI
141225
1
HY5110W/A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
100
±25
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
175
°C
°C
A
T
STG
I
S
-55 to 175
316
T
C
=25°C
Mounted on Large Heat Sink
I
DM
Pulsed Drain Current *
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
1085**
316
214
500
250
0.3
A
A
I
D
Continuous Drain Current
P
D
Maximum Power Dissipation
W
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
R
q
JC
R
q
JA
°C/W
40
Avalanche Ratings
E
AS
Avalanche Energ
y
,
S
ingle Pulsed
Note
：
2621***
mJ
L=0.5mH
*
Repetitive rating ; pulse width limiited by junction temperature
** Drain
current is limited by junction temperature
*** VD=80V
Electrical Characteristics
(T
C
= 25
°
C Unless Otherwise Noted)
HY5110
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
100
–
–
–
1
V
V
GS
=0V, I
DS
=250
m
A
V
DS
=100V, V
GS
=0V
–
–
I
DSS
Zero Gate Voltage Drain Current
m
A
T
J
=85°C
–
10
4
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
R
DS(ON)
Diode Characteristics
2
–
3
V
V
DS
=V
GS
, I
DS
=250
m
A
V
GS
=±25V, V
DS
=0V
–
±100
2.5
nA
2.1
*
Drain-Source On-state Resistance
V
GS
=10V, I
DS
=158A
–
m
W
V
SD
*
t
rr
Diode Forward Voltage
I
SD
=15
8
A
, V
GS
=0V
–
–
–
0.8
74
1.3
V
Reverse Recovery Time
Reverse Recovery Charge
–
–
ns
nC
I
SD
=15
8
A
,dl
SD
/dt=100A/
m
s
Q
rr
138
2
HY5110W/A
Electrical Characteristics (Cont.)
(T
C
= 25
°
C Unless Otherwise Noted)
HY5110
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
–
–
–
–
–
–
–
–
0.5
16465
1558
850
58
–
–
–
–
–
–
–
–
W
Input Capacitance
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
V
DD
=50V,
R
G
=
6
W
,
I
DS
=158A,
V
GS
=10V,
49
ns
t
d(OFF)
Turn-off Delay Time
T
f
Turn-off Fall Time
Gate Charge Characteristics
120
90
356
50
–
–
–
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
–
–
–
V
DS
=80V, V
GS
=10V,
I
DS
=158A
nC
129
Note * : Pulse test ; pulse width
£
300
m
s, duty cycle
£
2%.
3
HY5110W/A
Typical Operating Characteristics
Power Dissipation
Drain Current
320
280
240
200
500
400
300
200
100
limited by package
160
120
80
40
T
C
=25
o
C
0
T
C
=25
o
C,V
G
=10V
0
20 40 60 80
100 120 140 160 180 200
0
20 40 60 80
100 120 140 160 180 200
T
c
–
Temperature (°C)
T
c
–
C
ase
T
emperature (°C)
Case
Safe Operation Area
1000
100us
100
10
10ms
1ms
DC
1
0.1
1
10
100
400
V
DS
– Drain – Source Voltage (V)
Thermal Transient Impedance
1
Duty =
0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.001
0.01
Mounted on minimum pad
o
R
:
40 C/W
q
JA
Single
0.0001
0.1
0.0001
0.001
0.01
1
10
Square Wave Pulse Duration (sec)
4
HY5110W/A
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
400
350
300
250
200
150
100
50
3.0
2.5
V
GS
= 6,7,8,9,10V
5.5V
V
GS
=10V
5V
2.0
1.5
1.0
4.5V
0
0.0
0
80
160
240
320
400
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain-Source Voltage (V)
I
D
–
D
rain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
4.0
3.5
3.0
2.5
2.0
I
DS
=158A
I
DS
=250
m
A
1.5
1.0
4
5
6
7
8
9
10
-50 -25
0
25 50 75
100 125 150 175
V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
emperature (°C)
5
HY5110W/A
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
V
GS
= 10V
I
DS
=158A
200
100
10
T
j
=175
o
C
T
j
=25
o
C
R
ON
@T
j
=25
o
C: 2.1m
W
1
-50 -25
0
25 50 75
100 125 150 175
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
j
– Junction
T
emperature (°C)
V
SD
– Source-Drain Voltage (V)
Capacitance
Gate Charge
10
22000
20000
18000
16000
14000
12000
10000
8000
6000
4000
2000
0
Frequency=1MHz
Ciss
V
DS
= 80V
I
DS
= 158A
9
8
7
6
5
4
3
2
1
0
Coss
Crss
0
5
10 15 20 25 30 35 40
0
50 100
150 200 250 300 350 400
V
DS
– Drain – Source Voltage (V)
Q
G
–
G
ate Charge (nC)
6
HY5110W/A
Avalanche Test Circuit and Waveforms
V
DS
L
V
DSX(SUS)
t
p
DUT
V
DS
I
AS
R
G
V
DD
V
DD
I
L
tp
E
AS
0.01
W
t
AV
Avalanche Test Circuit and Waveforms
V
DS
R
D
V
DS
DUT
90%
V
GS
R
G
V
DD
10%
V
GS
tp
t
d(on)
t
r
t
d(off)
t
f
7
HY5110W/A
Package Information
TO-247-3L
mm
NOM
SYMBOL
MIN
4.90
2.31
1.90
1.16
1.96
2.96
0.59
20.90
16.25
1.05
15.70
13.10
4.90
2.40
MAX
5.10
2.51
2.10
1.26
2.06
3.06
0.66
21.10
16.85
1.35
15.90
13.50
5.10
2.60
A
A1
A2
b
b2
b4
c
5.00
2.41
2.00
1.21
2.01
3.01
0.61
21.00
16.55
1.20
15.80
13.30
5.00
2.50
5.44BSC
0.10
19.92
–
D
D1
D2
E
E1
E2
E3
e
h
L
0.05
19.80
–
3.50
–
0.15
20.10
4.30
3.70
7.30
2.60
6.00
L1
Φ
P
Φ
P1
Φ
P2
Q
S
R
T
3.60
–
2.40
5.60
2.50
5.80
6.15BSC
0.50REF
–
9.80
10.20
1.65REF
8.00REF
12.80REF
–
T1
T2
T3
U
θ
1
θ
2
θ
3
θ
4
6.00
6
°
4
°
1
°
14
°
6.40
8
°
6
°
1.5
°
16
°
7
°
5
°
–
15
°
8
HY5110W/A
TO-3P-3L
mm
NOM
SYMBOL
MIN
4.60
1.40
1.33
0.80
2.80
1.80
0.50
19.75
13.70
MAX
5.00
1.60
1.43
1.20
3.20
2.20
0.70
20.05
14.10
A
A1
A2
b
b1
b2
c
4.80
1.50
1.38
1.00
3.00
2.00
0.60
19.90
13.90
D
D1
D2
E
E1
E2
e
12.90 REF
15.40
13.40
9.40
15.60
13.60
9.60
15.80
13.80
9.80
5.45 TYP
G
H
H1
h
4.60
40.30
23.20
0.05
4.80
40.50
23.40
0.10
5.00
40.70
23.60
0.15
L
7.40 TYP
L1
L2
L3
P
P1
P2
P3
R
Q
Q1
U
θ
1
θ
2
θ
3
9.00 TYP
11.00 TYP
1.00 REF
6.90
1.40
7.00
3.20 REF
3.50 REF
1.50 1.60
0.50 REF
5.00 REF
12.76 12.96
7.10
12.56
7.8
5
°
8
7
°
3
°
60
°
REF
8.2
9
°
5
°
1
°
9
HY5110W/A
Devices Per Unit
Package Type
TO-247-3L
TO-3P-3L
Unit
Tube
Tube
Quantity
30
30
Classification Profile
10
HY5110W/A
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Preheat & Soak
100
°
C
150
°
C
60-120 seconds
150
°
C
200
°
C
60-120 seconds
Temperature min (T
smin
)
Temperature max (T
smax
)
Time (T
smin
to T
smax
) (t
s
)
Average ramp-up rate
(T
smax
to T
P
)
3
°
C/second max.
3
°
C/second max.
Liquidous temperature (T
L
)
Time at liquidous (t
L
)
183
°
C
60-150 seconds
217
°
C
60-150 seconds
Peak package body Temperature
(T
p
)*
See Classification Temp in table 1
20** seconds
See Classification Temp in table 2
30** seconds
Time (t
P
)** within 5
°
C of the specified
classification temperature (T
c
)
Average ramp-down rate (T
p
to T
smax
)
6
°
C/second max.
6
°
C/second max.
6 minutes max.
8 minutes max.
Time 25
°
C to peak temperature
* Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
p
) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm
3
350
Package
Thickness
Volume mm
3
<350
<2.5 mm
235
°
C
220
°
C
220
°
C
220
°
C
³
2.5 mm
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm
3
Volume mm
3
350-2000
260
°
C
Volume mm
3
<350
260
°
C
260
°
C
250
°
C
>2000
260
°
C
245
°
C
245
°
C
1.6 mm – 2.5 mm
³
2.5 mm
250
°
C
245
°
C
Reliability Test Program
Test item
SOLDERABILITY
Method
JESD-22, B102
Description
5 Sec, 245
°
C
HOLT
PCT
TCT
JESD-22, A108
JESD-22, A102
JESD-22, A104
1000 Hrs, Bias @ 125
°
C
168 Hrs, 100
%
RH, 2atm, 121
°
C
500 Cycles, -65
°
C~150
°
C
Customer Service
Worldwide Sales and Service: sales@hooyi.cc
Technical Support: Technology@hooyi.cc
Xi’an Hooyi Semiconductor Technology Co., Ltd.
East Side of 2# Plant,No.105,5th Fengcheng Road,Economic and Technological Development Zone,Xi’an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hooyi.cc
11
