HUAYI-HY5208W
| Part # | HUAYI-HY5208W |
Download  | HUAYI-HY5208W |
HY5208W/A
N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
80V/320A
1.7
m
(typ.) @ V
GS
=10V
R
DS(ON)
=
•
•
•
Avalanche Rated
Reliable and Rugged
Lead Free and Gree
n
D
evice
s
A
vailable
(RoHS Compliant)
S
S
D
D
G
G
TO-247
A
-3L
TO-3P-3L
Applications
Power Management for Inverter Systems.
N-Channe
l
M
OSFET
Ordering and Marking Information
Package Code
W
A
W : TO-247
A
-3L
A : TO-3P-3L
HY5208
HY5208
Assembly Material
Date Code
YYXXXJWW G
YYXXXJWW G
G : Lead Free Device
YYXXX WW
Note: HUAYI lead -free products contain molding compounds/die attach materials and 100% matte tin plate
Termination finish;which are fully compliant with RoHS. HUAYI lead -free products meet or exceed the lead-
Free requirements of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.
HUAYI defines
“Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed
900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to
this pr-oduct and/or to this document at any time without notice.
1
V1.0
HY5208W/A
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
80
±25
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
175
°C
°C
A
T
STG
I
S
-55 to 175
320
T
C
=25°C
Mounted on Large Heat Sink
I
DM
Pulsed Drain Current *
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
1050**
320
228
416
208
0.36
40
A
A
I
D
Continuous Drain Current
P
D
Maximum Power Dissipation
W
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
R
JC
R
JA
°C/W
Avalanche Ratings
E
AS
Avalanche Energ
y
,
S
ingle Pulsed
Note
：
1500***
mJ
L=0.5mH
* Repetitive
rating ; pulse width limiited by junction temperature
** Drain
current is limited by junction temperature
*** VD=64V
Electrical Characteristics
(T
C
= 25
C Unless Otherwise Noted)
HY5208
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
80
–
–
–
–
1
V
V
GS
=0V, I
DS
=250
A
V
DS
=80V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
A
T
J
=85°C
–
–
10
4
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
R
DS(ON)
Diode Characteristics
2
–
3
V
V
DS
=V
GS
, I
DS
=250
A
V
GS
=±25V, V
DS
=0V
–
±100
2.0
nA
m
1.7
*
Drain-Source On-state Resistance
V
GS
=10V, I
DS
=160A
–
V
SD
*
t
rr
Diode Forward Voltage
I
SD
=16
0
A
, V
GS
=0V
–
–
–
0.8
76
1
–
V
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
I
SD
=16
0
A
,dl
SD
/dt=100A/
s
Q
rr
140
–
V1.0
2
HY5208W/A
Electrical Characteristics (Cont.)
(T
C
= 25
C Unless Otherwise Noted)
HY5208
Symbol
Parameter
Test Conditions
Unit
Min. Typ. Max.
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
–
–
–
–
–
–
–
–
1.7
12160
1500
920
58
–
–
Input Capacitance
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
–
–
120
64
200
176
V
DD
=40V,
R
G
=
6
,
I
DS
=160A,
V
GS
=10V,
35
ns
t
d(OFF)
Turn-off Delay Time
T
f
Turn-off Fall Time
Gate Charge Characteristics
110
90
298
44
–
–
–
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
–
–
–
V
DS
=64V, V
GS
=10V,
I
DS
=160A
nC
115
Note * : Pulse test ; pulse width
300
s, duty cycle
2%.
3
V1.0
HY5208W/A
Typical Operating Characteristics
Power Dissipation
Drain Current
320
280
240
200
500
400
300
200
100
limited by package
160
120
80
40
T
C
=25
o
C
0
T
C
=25
o
C,V
G
=10V
0
20 40 60 80
100 120 140 160 180 200
0
20 40 60 80
100 120 140 160 180 200
T
c
–
Temperature (°C)
T
c
–
C
ase
T
emperature (°C)
Case
Safe Operation Area
1000
100us
10ms
100
10
1ms
DC
1
0.1
1
10
100
400
V
DS
– Drain – Source Voltage (V)
Thermal Transient Impedance
1
Duty =
0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.001
0.01
Mounted on minimum pad
o
R
JA
:
40 C/W
Single
0.0001
0.1
0.0001
0.001
0.01
1
10
Square Wave Pulse Duration (sec)
4
V1.0
HY5208W/A
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
400
350
300
250
200
150
100
50
3.0
2.5
V
GS
= 6,7,8,9,10V
5.5V
5V
V
GS
=10V
2.0
1.5
4.5V
1.0
0.5
0
0.0
0
80
160
240
320
400
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain-Source Voltage (V)
I
D
– Drain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
3.5
3.0
2.5
I
DS
=160A
I
DS
=250
A
2.0
1.5
1.0
0.5
4
5
6
7
8
9
10
-50 -25
0
25 50 75
100 125 150 175
V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
emperature (°C)
V1.0
5
HY5208W/A
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
170
100
V
GS
= 10V
I
DS
=160A
T
j
=175
o
C
10
1
T
j
=25
o
C
R
ON
@T
j
=25
o
C: 1.7m
0.1
-50 -25
0
25 50 75
100 125 150 175
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
j
– Junction
T
emperature (°C)
V
SD
– Source-Drain Voltage (V)
Capacitance
Gate Charge
10
22000
20000
18000
16000
14000
12000
10000
8000
6000
4000
2000
0
Frequency=1MHz
V
DS
= 64V
I
DS
= 160A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
0
5
10 15 20 25 30 35 40
0
40 80
120 160
200 240 280 320
V
DS
– Drain – Source Voltage (V)
Q
G
–
G
ate Charge (nC)
V1.0
6
HY5208W/A
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
V1.0
7
HY5208W/A
Device Per Unit
Package Type
Unit
Quantity
TO-247A-3L
Tube
30
Package Information
TO-247A
–
3
L
PP
120
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V1.0
8
HY5208W/A
Device Per Unit
Package Type
Unit
Quantity
TO-3P-3L
Tube
30
Package Information
TO-3P-3L
V1.0
9
HY5208W/A
Classification Profile
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Preheat & Soak
100
C
150
C
60-120 seconds
150
C
200
C
60-120 seconds
Temperature min (T
smin
)
Temperature max (T
smax
)
Time (T
smin
to T
smax
) (t
s
)
Average ramp-up rate
(T
smax
to T
P
)
3
C/second max.
3
C/second max.
Liquidous temperature (T
L
)
Time at liquidous (t
L
)
183
C
60-150 seconds
217
C
60-150 seconds
Peak package body Temperature
(T
p
)*
See Classification Temp in table 1
20** seconds
See Classification Temp in table 2
30** seconds
Time (t
P
)** within 5
C of the specified
classification temperature (T
c
)
Average ramp-down rate (T
p
to T
smax
)
6
C/second max.
6
C/second max.
6 minutes max.
8 minutes max.
Time 25
C to peak temperature
* Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
p
) is defined as a supplier minimum and a user maximum.
V1.0
10
HY5208W/A
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm
3
Package
Thickness
Volume mm
3
<350
≥
350
<2.5 mm
235
C
220
C
220
C
2.5 mm
220
C
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm
3
<350
Volume mm
3
350-2000
260
C
Volume mm
3
>2000
260
C
245
C
245
C
260
C
260
C
250
C
1.6 mm – 2.5 mm
2.5 mm
250
C
245
C
Reliability Test Program
Test item
SOLDERABILITY
Method
JESD-22, B102
Description
5 Sec, 245°C
HTRB
PCT
JESD-22, A108
JESD-22, A102
JESD-22, A104
168 Hrs /500 Hrs /1000 Hrs, Bias @ 150°C
96Hrs, 100%RH, 2atm, 121°C
500 Cycles, -55°C~150°C
TCT
Customer Service
Worldwide Sales and Service: sales@hymexa.com
Technical Support: Technology@hymexa.com
Xi’an Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and
T
e
chnological Development Zone,Xi’an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
V1.0
11
