HUAYI-HYG012N03LR1TA
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Microelectronics
HYG012N03LR1TA
N-Channel Enhancement Mode MOSFET
Feature
Pin Description
30V/380A
Tab
R
DS(ON)
= 0.7 mΩ(typ.)
@VGS = 10V
R
DS(ON)
=1.0
mΩ(typ.)@VGS =
4.5V
8
100% Avalanche Tested
100% DVDS
TOLL
Reliable and Rugged
Halogen Free and Green Devices Available
(RoHS Compliant)
Applications
Switching application
Pin 1
Pin 2,3,4,5,6,7,8
Single N-Channel MOSFET
Ordering and Marking Information
Package Code
TA: TOLL
TA
HYG012N03
XYMXXXXXX
Date Code
XYMXXXXXX
Note: HUAYI halogen free products contain molding compounds/die attach materials and 100% matte tin plate Termi-
Nation finish;which are fully compliant with RoHS. HUAYI halogen free products meet or exceed the halogen free
require-ments of IPC/JEDEC J-STD-020 for MSL classification at halogen free peak reflow temperature. HUAYI
defines “Green” to mean halogen free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by
weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
V2.0
1
Microelectronics
HYG012N03LR1TA
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(
T
c
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
30
V
V
Gate-Source Voltage
±
20
Junction
T
emperature Range
Storage
T
emperature Range
Source Current-Continuous(Body Diode)
°C
°C
A
-55 to 175
380
T
STG
I
S
T
c
=25°C
Mounted on Large Heat Sink
T
c
=25°C
T
c
=25°C
T
c
=100°C
T
c
=25°C
T
c
=100°C
1368
380
269
234
117
0.64
45
A
A
I
DM
Pulsed Drain Current *
I
D
Continuous Drain Current
A
W
P
D
Maximum Power Dissipation
W
R
θ
J
C
R
θ
J
A
E
AS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient **
Single Pulsed-Avalanche Energy ***
°C/W
°C/W
mJ
L=0.3mH
1150
Note:
*
Repetitive rating
；
pulse width limited by max.junction temperature.
** Surface
mounted on 1in2 FR-4 board.
*** Limited
by T
J
max , starting T
J
=25°C
, L =
0.3mH
, R
G
= 25
Ω
,
V
GS
=10V
.
Electrical Characteristics
(Tc =25°C Unless Otherwise Noted)
HYG012N03LR1
Symbol
Parameter
Test Conditions
Unit
Min
Typ.
Max
Static Characteristics
V
GS
=
0V
,I
DS
= 250
μ
A
BV
DSS
Drain-Source Breakdown Voltage
30
–
–
–
–
1
V
μ
A
μ
A
V
V
DS
=3
0
V
,
V
GS
=0V
I
DSS
Drain-to-Source Leakage Current
T
J
=125°C
–
–
50
3
V
DS
=V
GS
, I
DS
=250
μ
A
V
GS
=
±
20
V
,
V
DS
=0V
V
GS
=10V,I
DS
=20A
V
GS(th)
I
GSS
Gate Threshold Voltage
1
–
1.8
–
Gate-Source Leakage Current
Drain-Source On-State Resistance
Drain-Source On-State Resistance
±100
nA
m
Ω
mΩ
R
DS(ON)
R
DS(ON)
–
0.7
1.0
0.9
1.4
VGS=4.5V,IDS=20A
–
Diode Characteristics
Diode Forward Voltage
I
SD
=20A,V
GS
=0V
–
0.76
0.90
V
V
SD
t
rr
Reverse Recovery Time
Reverse Recovery Charge
–
–
38
40
–
–
ns
nC
I
SD
=20A,dI
SD
/dt
=100A/
μs
Q
rr
V2.0
2
Microelectronics
HYG012N03LR1TA
Electrical Characteristics (Cont.)
(Tc =25°C Unless Otherwise Noted)
HYG012N03LR1
Symbol
Parameter
Test Conditions
Unit
Min
Typ.
Max
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
Gate Resistance
V
GS
=0V
,
V
DS
=0V,F=1MHz
V
GS
=
0V
,
–
–
–
–
–
–
–
–
1.0
7796
1160
913
21
–
–
–
–
–
–
–
–
Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DS
=
25V
,
pF
Frequency=1MKHz
38
V
DD
=20V,
R
G
=4
Ω,
ns
I
DS
=20A,V
GS
=10V
t
d(OFF)
T
f
114
99
Gate Charge
Characteristics
Total Gate Charge(V
GS
=10V)
Q
g
Q
g
–
175
94
–
Total Gate Charge(V
GS
=4.5V)
nC
V
V
DS
=24V, I
D
s
=20A
Q
gs
–
–
–
27
–
–
–
Gate-Source Charge
Gate-Drain Charge
Gate plateau voltage
Q
gd
53
V
plateau
3.4
Note: *Pulse test
，
pulse width
≤
300us
，
duty cycle
≤
2%
V2.0
3
Microelectronics
HYG012N03LR1TA
Typical Operating Characteristics
Figure 1: Power Dissipation
Figure 2: Drain Current
280
400
350
300
250
V
GS
=10V
V
GS
=10V
240
200
160
120
80
limited by package
200
150
100
50
40
0
0
25
50
100
125
150
175
Tc-Case Temperature(
℃
)
Tc
7
–
C
5
ase Temperature(
℃
)
0
25
50
75
100
125
150
175
Figure 3: Safe Operation Area
Figure 4: Thermal Transient Impedance
10000
10
D=T
on
/T
In descending order
D=0.5,0.3,0.1,0.05,0.02,0.01,single pluse
*Notes:
1.Tc=25
℃
2.Tj=175
℃
T
j,PK
=T
θ jC
=0.64
℃
/
W
C
+
P
DM
.
Z
θ jC
.
R
θ jC
R
1000
100
10
3.Single Pulse
10us
1
100us
0.5
0.3
1ms
0.1
10ms
DC
0.05
Operation In This Area
Is Limited By R
D
SON
0.02
0.1
0.01
P
D
Single Pusle
1
T
o
n
T
0.1
0.01
0.01
Maximum Effective Transient Thermal
10
1E-5
1E-4
0.001
0.01
0.1
1
100
1
100
V
0
D
.
1
S
-Drain-Source Voltage(V)
10
Impedance, Junction-to-Case
Figure 5: Output Characteristics
Figure 6: Drain-Source On Resistance
1.5
350
300
250
200
150
100
50
V
G
S
=15V
V
G
S
=10V
V
G
S
=6V
Tj=25
℃
Tj=25
℃
1.2
V
G
S
=4.5V
V
G
S
=4.5V
0.9
V
G
S
=8V
V
G
S
=10V
0.6
0.3
0.0
0
0.0
0.4
0.6
1.0
0.2
V
DS
-Drain-Source Voltage (V)
0.8
0
25 50 75
100 125 150 175
225 250 275 300
I
D
-Drain Current(A
2
)
00
V2.0
4
Microelectronics
HYG012N03LR1TA
Typical Operating Characteristics(Cont.)
Figure 7: On-Resistance vs. Temperature
Figure 8: Source-Drain Diode Forward
2.4
1000
100
10
V
GS
=10V
I
DS
=20A
2.0
1.6
1.2
0.8
0.4
Tj=175
℃
Tj=25
℃
1
0.1
0.01
0
25
100
150
175
Tj
5
–
0
Junctio
7
n
5
Temperature
1
(
2
℃
5
)
0.3
0.4
0.6
0.7
0.8
0.9
1.0
V
0
S
.
D
5
-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics
Figure 10: Gate Charge Characteristics
10
12000
Tj=25
℃
V
DS
=24V
V
GS
=0V,
Frequency=1MHz
I
D
=20A
8
10000
8000
6000
4000
2000
Ciss
6
4
2
0
Coss
Crss
0
25
50
75
100
125
150
175
0
5
15
20
25
30
V
DS
–
1
D
0
rain-Source Voltage (V)
Q
G
-Gate Charge (nC)
V2.0
5
Microelectronics
HYG012N03LR1TA
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
V2.0
6
Microelectronics
HYG012N03LR1TA
Device Per Unit
Package Type
Unit
Quantity
TOLL
Reel
1200
Package Information
TOLL
V2.0
7
Microelectronics
HYG012N03LR1TA
Classification Profile
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Preheat & Soak
Pb-Free Assembly
Temperature min (T
smin
)
100 °C
150 °C
150 °C
200 °C
Temperature max (T
smax
)
Time (Tsmin to Tsmax) (t
s
)
60-120 seconds
60-120 seconds
Average ramp-up rate
3 °C/second max.
3°C/second max.
(T
smax
to T
Liquidous temperature (T
Time at liquidous (t
Peak package body Temperature
(T )*
Time (t
classification temperature (T
Average ramp-down rate (T
Time 25°C to peak temperature
P
)
L
)
183 °C
217 °C
L
)
60-150 seconds
60-150 seconds
See Classification Temp in table 1
SeeClassification Tempin table 2
p
P
)** within 5°C of the specified
20** seconds
30** seconds
c
)
p
to T
smax
)
6 °C/second max.
6 minutes max.
6 °C/second max.
8 minutes max.
*Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
p
) is defined as a supplier minimum and a user maximum.
V2.0
8
Microelectronics
HYG012N03LR1TA
Table 1.SnPb Eutectic Process – Classification
T
emperatures (Tc)
Package
Thickness
＜
2.5 mm
≥2.5 mm
Volume mm
³
Volume mm
³
<350
≥
350
220 °C
220 °C
235 °C
220 °C
Table 2.Pb-free Process – Classification Temperatures (
T
c
)
Package
Thickness
<1.6 mm
Volume mm
³
<350
Volume mm
³
350-2000
260 °C
Volume mm
³
≥
2000
260 °C
260 °C
1.6 mm – 2.5 mm
≥
2.5 mm
260 °C
250 °C
245 °C
250 °C
245 °C
245 °C
Reliability Test Program
Test item
SOLDERABILITY
HTRB
Method
Description
5 Sec, 245°C
JESD-22, B102
JESD-22, A108
JESD-22, A108
168/500 Hrs, Bias @ 150°C
168 /500 Hrs, V
gs
100% @ 150°C
96 Hrs, 100%RH, 2atm, 121°C
250/500 Cycles, -55°C~150°C
HTGB
PCT
TCT
JESD-22, A102
JESD-22, A104
Customer Service
Worldwide Sales and Service: sales@hymexa.com
Technical Support:Technology@hymexa.com
Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and
T
echnological Development Zone,Xi’an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
9
V2.0
