HUAYI-HYG019N06LS1C2

HYG019N06LS1C2  

Single N-Channel Enhancement Mode MOSFET  

Feature  

Pin Description  

D D D D  

D D D D  



60V/210A  

R

DS(ON)

= 1.6 mΩ (typ.) @ V

GS

= 10V  

100% Avalanche Tested  

Reliable and Rugged  







Halogen- Free Devices Available  

(RoHS Compliant)  

S S S G  

G S S S  

Pin1  

PDFN8L

（

5×6

）  

Applications  







High Frequency Point-of-Load Synchronous Buck Converter  

Power Tool Application  

Networking DC-DC Power System  

Single N-Channel MOSFET  

Ordering and Marking Information  

Package Code  

C2  

C2: PDFN8L

（

5×6

）  

G019N06  

XYMXXXXXX  

Date Code  

XYMXXXXXX  

Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi-  

Nation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-  

ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”  

to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous  

material and total of Br and Cl does not exceed 1500ppm by weight).  

HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr  

-oduct and/or to this document at any time without notice.  

V1.1  

1

HYG019N06LS1C2  

Absolute Maximum Ratings  

Symbol  

Parameter  

Rating  

Unit  

Common Ratings

(

T

c=25°C Unless Otherwise Noted)  

V

DSS  

V

GSS  

T

J  

Drain-Source Voltage  

V

V

60  

±

20  

Gate-Source Voltage  

Maximum Junction

T

emperature  

Storage

T

emperature Range  

Source Current-Continuous(Body Diode)  

°C  

°C  

A

175  

T

STG  

I

S  

-55 to 175  

210  

T

c

=25°C  

T

c

=25°C  

Mounted on Large Heat Sink  

A

I

DM  

Pulsed Drain Current *  

720  

210  

T

c

=25°C  

A

A

I

D  

Continuous Drain Current  

T

c

=100°C  

148.5  

166.6  

83.3  

0.9  

T

c

=25°C  

W

W

P

D  

Maximum Power Dissipation  

T

c

=100°C  

R



JC  

R



JA  

E

AS  

°C/W  

°C/W  

mJ  

Thermal Resistance, Junction-to-Case  

Thermal Resistance, Junction-to-Ambient **  

SinglePulsed-Avalanche Energy ***  

47  

L=0.3mH  

702.2  

Note:  

*

Repetitive rating

；

pulse width limited by max.junction temperature.  

** Surface

 

mounted on FR-4 board.  

*** Limited

 

by T

J

max , starting T

J

=25°C

, L =

0.3mH

,

V

DS

=48V

.

,

V

GS

=10V

.  

Electrical Characteristics

(Tc =25°C Unless Otherwise Noted)  

HYG019N06LS1  

Symbol  

Parameter  

Test Conditions  

Unit  

Min  

Typ.  

Max  

Static Characteristics  

V

GS

=

0V

,I

DS

=250μA  

V

DS

=

60V,

V

GS

=0V  

BV

DSS  

Drain-Source Breakdown Voltage  

60  

–

–

–

V

–

–

1

μA  

μA  

V

I

DSS  

Drain-to-Source Leakage Current  

T

J

=100°C  

–

50  

3.0  

100  

2.2  

V

DS

=V

GS

, I

DS

=250μA  

V

GS

=

±

20V,V

DS

=0V  

V

GS

=10V,I

DS

=50A  

V

GS(th)  

I

GSS  

Gate Threshold Voltage  

1.5  

–

2.4  

–

Gate-Source Leakage Current  

Drain-Source On-State Resistance  

nA  

mΩ  

R

DS(ON)

*  

–

1.6  

Diode Characteristics  

V

SD

*  

t

rr  

Diode Forward Voltage  

I

SD

=50A,V

GS

=0V  

–

–

–

0.83  

42  

1.2  

V

Reverse Recovery Time  

Reverse Recovery Charge  

–

–

ns  

nC  

I

SD

=50A,dI

SD

/dt

=100A/μs  

Q

rr  

54.6  

V1.1  

2

HYG019N06LS1C2  

Electrical Characteristics (Cont.)

(Tc =25°C Unless Otherwise Noted)  

HYG019N06LS1  

Symbol  

Parameter  

Test Conditions  

Unit  

Min  

Typ.  

Max  

Dynamic Characteristics  

R

G  

C

iss  

C

oss  

Gate Resistance  

Input Capacitance  

V

GS

=0V

,

V

DS

=0V,F=1MHz  

–

–

–

0.68  

–

–

–

Ω

5044  

V

GS

=

0V

,  

Output Capacitance  

Reverse Transfer Capacitance  

Turn-on Delay Time  

Turn-on Rise Time  

V

DS

=

25V

,  

1150  

40.4  

17.9  

59.9  

41.2  

43.6  

pF  

Frequency=1.0MHz  

C

rss  

t

d(ON)  

T

r  

–

–

–

–

–

–

–

–

–

–

V

DD

=3

0

V,

R

G

=

2.5Ω,  

I

DS

=50A,V

GS

=10V  

ns  

t

d(OFF)  

T

f  

Turn-off Delay Time  

Turn-off Fall Time  

Gate Charge

 

Characteristics  

Q

g  

Q

gs  

Q

gd  

Total Gate Charge  

–

–

–

–

–

–

79.2  

24.4  

13.6  

V

DS

=48V, V

GS

=10V,  

I

D

=50A  

Gate-Source Charge  

Gate-Drain Charge  

Note: *Pulse test

，

pulse width ≤ 300us

，

duty cycle ≤ 2%  

V1.1  

3

HYG019N06LS1C2  

Typical Operating Characteristics  

Figure 1: Power Dissipation  

Figure 2: Drain Current  

Tc-Case Temperature(

℃

)  

Tc-Case Temperature(

℃

)  

Figure 3: Safe Operation Area  

Figure 4: Thermal Transient Impedance  

V

DS

-Drain-Source Voltage(V)  

Maximum Effective Transient Thermal  

Impedance, Junction-to-Case  

Figure 5: Output Characteristics  

Figure 6: Drain-Source On Resistance  

V

DS

-Drain-Source Voltage (V)  

I

D

-Drain Current(A)  

V1.1  

4

HYG019N06LS1C2  

Typical Operating Characteristics(Cont.)  

Figure 7: On-Resistance vs. Temperature  

Figure 8: Source-Drain Diode Forward  

Tj-Junction

T

emperature (

℃

)  

V

SD

-Source-Drain Voltage(V)  

Figure 9: Capacitance Characteristics  

Figure 10: Gate Charge Characteristics  

V

DS

-Drain-Source Voltage (V)  

Q

G

-Gate Charge (

nC

)  

V1.1  

5

HYG019N06LS1C2  

Avalanche Test Circuit and Waveforms  

Switching Time Test Circuit and Waveforms  

Gate Charge Test Circuit and Waveforms  

V1.1  

6

HYG019N06LS1C2  

Device Per Unit  

Package Type  

Unit  

Quantity  

PDFN8L

（

5×6

）  

Reel  

5000  

Package Information  

PDFN8L

（

5×6

）  

V1.1  

7

HYG019N06LS1C2  

Classification Profile  

Classification Reflow Profiles  

Profile Feature  

Preheat & Soak  

Sn-Pb Eutectic Assembly  

Pb-Free Assembly  

100 °C  

150 °C  

150 °C  

200 °C  

Temperature min (T

smin  

)

Temperature max (T

smax  

)

60-120 seconds  

60-120 seconds  

Time (Tsmin to Tsmax) (t  

s

)

Average ramp-up rate  

3 °C/second max.  

3°C/second max.  

(T

smax

to T )  

P

Liquidous temperature (T  

Time at liquidous (t  

Peak package body Temperature  

(T )*  

Time (t  

classification temperature (T  

Average ramp-down rate (T  

Time 25°C to peak temperature  

L

)

183 °C  

217 °C  

L

)

60-150 seconds  

60-150 seconds  

See Classification Temp in table 1

 

SeeClassification Tempin table 2  

p

P

)** within 5°C of the specified  

20** seconds  

30** seconds  

c

)

p

to T

smax  

)

6 °C/second max.  

6 minutes max.  

6 °C/second max.  

8 minutes max.  

*Tolerance for peak profile Temperature (T

p

) is defined as a supplier minimum and a user maximum.  

** Tolerance for time at peak profile temperature (t ) is defined as a supplier minimum and a user maximum.  

p

V1.1  

8

HYG019N06LS1C2  

Table 1.SnPb Eutectic Process – Classification Temperatures (Tc)  

Package  

Thickness  

＜

2.5 mm  

≥2.5 mm  

Volume mm

³  

<350  

Volume mm

³  

≥

350  

235 °C  

220 °C  

220 °C  

220 °C  

Table 2.Pb-free Process – Classification Temperatures (Tc)  

Package  

Thickness  

<1.6 mm  

Volume mm

³  

<350  

Volume mm

³  

350-2000  

260 °C  

Volume mm

³  

≥

2000  

260 °C  

260 °C  

1.6 mm – 2.5 mm  

≥

2.5 mm  

260 °C  

250 °C  

245 °C  

250 °C  

245 °C  

245 °C  

Reliability Test Program  

Test item  

Method  

Description  

SOLDERABILITY  

PRECON  

JESD-22, B102  

JESD-22, A113  

JESD-22, A108  

5 Sec, 245°C  

30°C/60%/192Hrs  

HTRB  

168Hrs//500Hrs/1000Hrs, Bias @ 150°C  

168 Hrs/500Hrs/1000Hrs, V

gs

100% @ 150°C  

96 Hrs, 100%RH, 2atm, 121°C  

HTGB  

PCT  

JESD-22, A108  

JESD-22, A102  

JESD-22, A104  

TCT  

500 Cycles, -55°C~150°C  

Customer Service  

Worldwide Sales and Service: sales@hymexa.com  

Technical Support:

 

Huayi Microelectronics Co., Ltd.  

No.8928,Shangji Road,Economic and

T

echnological Development Zone,Xi’an,China  

TEL: (86-029) 86685706  

FAX: (86-029) 86685705  

E-mail: sales@hymexa.com  

V1.1  

9