HUAYI-HYG035N06LS1C2

HYG035N06LS1C2  

Single N-Channel Enhancement Mode MOSFET  

Feature  

Pin Description  



65V/90A  

D D D D  

D D D D  

R

DS(ON)

= 2.9mΩ(typ.) @V

GS

= 10V  

R

DS(ON)

= 4.7mΩ(typ.) @V

GS

= 4.5V  







100% Avalanche Tested  

Reliable and Rugged  

Halogen- Free Devices Available  

G S S S  

PDFN8L(5×6)  

S S S G  

Applications  







Load Switch  

Lithium battery protect board  

Motor drive for electric tools  

Single N-Channel MOSFET  

Ordering and Marking Information  

Package Code  

C2: PDFN8L(5×6)  

C2  

G035N06  

XYMXXXXXX  

Date Code  

XYMXXXXXX  

Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-  

Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-  

ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”  

to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous  

material and total of Br and Cl does not exceed 1500ppm by weight).  

HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr  

-oduct and/or to this document at any time without notice.  

V1.0

2019  

1

HYG035N06LS1C2  

Absolute Maximum Ratings  

Symbol  

Parameter  

Rating  

Unit  

Common Ratings

(

T

c=25

℃

Unless Otherwise Noted)  

V

DSS  

V

GSS  

T

J  

Drain-Source Voltage  

V

V

65  

Gate-Source Voltage  

﹢

20/-12  

-55 to 175  

-55 to 175  

90  

Junction

T

emperature Range  

Storage

T

emperature Range  

Source Current-Continuous(Body Diode)  

℃

℃

A

T

STG  

I

S  

T

c

=25

℃  

Mounted on Large Heat Sink  

T

c

=25

℃  

T

c

=25

℃  

T

c

=100

℃  

T

c

=25

℃  

T

c

=100

℃  

A

A

I

DM  

Pulsed Drain Current *  

410  

90  

I

D  

Continuous Drain Current  

A

62  

W

56  

P

D  

Maximum Power Dissipation  

W

28  

R



JC  

R



JA  

E

AS  

℃

/W  

℃

/W  

mJ  

Thermal Resistance, Junction-to-Case  

Thermal Resistance, Junction-to-Ambient **  

Single Pulsed-Avalanche Energy ***  

2.65  

45  

L=0.1mH  

190  

Note:  

*

Repetitive rating

；

pulse width limited by max.junction temperature.  

** Surface

 

mounted on FR-4 board.  

*** Limited

 

by T

J

max , starting T

J

=25

℃

, L =

0.1mH

,

R

G

=25

Ω.

,

V

GS

=10V

.  

Electrical Characteristics

(Tc =25

℃

Unless Otherwise Noted)  

HYG035N06LS1  

Symbol  

Parameter  

Test Conditions  

Unit  

Min  

Typ.  

Max  

Static Characteristics  

V

GS

=

0V

,I

DS

=250μA  

V

DS

=65

V,

V

GS

=0V  

BV

DSS  

Drain-Source Breakdown Voltage  

65  

–

–

–

–

–

1

V

μA  

μA  

I

DSS  

Drain-to-Source Leakage Current  

T

J

=125

℃  

–

50  

V

DS

=V

GS

, I

DS

=250μA  

V

GS(th)  

Gate Threshold Voltage  

1

1.2  

3

V

I

GSS  

Gate-Source Leakage Current  

V

GS

=+

20V/-12V,V

DS

=0V  

V

GS

=10V,I

DS

=20A  

–

–

–

–

±100  

3.5  

nA  

mΩ  

mΩ  

2.9  

4.7  

R

DS(ON)  

Drain-Source On-State Resistance  

V

GS

=4.5V,I

DS

=20A  

6.0  

Diode Characteristics  

Diode Forward Voltage  

I

SD

=20A,V

GS

=0V  

V

SD

*  

t

rr  

–

–

–

0.8  

42  

35  

1.2  

V

Reverse Recovery Time  

Reverse Recovery Charge  

–

–

ns  

nC  

I

SD

=10A,dI

SD

/dt

=100A/μs  

Q

rr  

V1.0

2019  

2

HYG035N06LS1C2  

Electrical Characteristics (Cont.)

(Tc =25

℃

Unless Otherwise Noted)  

HYG035N06LS1  

Symbol  

Parameter  

Test Conditions  

Unit  

Min  

Typ.  

Max  

Dynamic Characteristics  

R

G  

C

iss  

C

oss  

C

rss  

t

d(ON)  

T

r  

Gate Resistance  

V

GS

=0V

,

V

DS

=0V,F=1MHz  

V

GS

=

0V

,  

–

–

–

–

–

–

–

–

1.8  

3687  

1610  

112  

15  

–

–

–

–

–

–

–

–

Ω

Input Capacitance  

Output Capacitance  

Reverse Transfer Capacitance  

Turn-on Delay Time  

Turn-on Rise Time  

Turn-off Delay Time  

Turn-off Fall Time  

V

DS

=

25V

,  

pF  

Frequency=1.0MHz  

29  

V

DD

=

30V

,

R

G

=4

Ω,  

I

DS

=10A,V

GS

=10V  

ns  

t

d(OFF)  

92  

T

f  

95  

Gate Charge

 

Characteristics  

Q

g  

Q

g  

Total Gate Charge

（

V

GS

=10V

）  

–

–

–

–

76  

42  

11  

23  

–

–

–

–

Total Gate Charge

（

V

GS

=4.5V)  

V

DS

=48V, V

GS

=10V,  

I

DS

=20A  

nC  

Q

gs  

Q

gd  

Gate-Source Charge  

Gate-Drain Charge  

Note: *Pulse test

，

pulse width ≤ 300us

，

duty cycle ≤ 2%  

V1.0

2019  

3

HYG035N06LS1C2  

Typical Operating Characteristics  

Figure 1: Power Dissipation  

Figure 2: Drain Current  

5.5  

7

Tc-Case Temperature(

℃

)  

Tc-Case Temperature(

℃

)  

Figure 3: Safe Operation Area  

Figure 4: Thermal Transient Impedance  

V

DS

-Drain-Source Voltage(V)  

Maximum Effective Transient Thermal  

Impedance, Junction-to-Case  

Figure 5: Output Characteristics  

Figure 6: Drain-Source On Resistance  

V

DS

-Drain-Source Voltage (V)  

I

D

-Drain Current(A)  

V1.0

2019  

4

HYG035N06LS1C2  

Typical Operating Characteristics(Cont.)  

Figure 7: On-Resistance vs. Temperature  

Figure 8: Source-Drain Diode Forward  

Tj-Junction

T

emperature (

℃

)  

V

SD

-Source-Drain Voltage(V)  

Figure 9: Capacitance Characteristics  

Figure 10: Gate Charge Characteristics  

V

DS

-Drain-Source Voltage (V)  

Q

G

-Gate Charge (

nC

)  

V1.0

2019  

5

HYG035N06LS1C2  

Avalanche Test Circuit  

Switching Time Test Circuit  

Gate Charge Test Circuit  

V1.0

2019  

6

HYG035N06LS1C2  

Device Per Unit  

Package Type  

Unit  

Quantity  

PDFN8L(5×6)  

Reel  

5000  

Package Information  

PDFN8L(5×6

）

 

V1.0

2019  

7

HYG035N06LS1C2  

Classification Profile  

Classification Reflow Profiles  

Profile Feature  

Preheat & Soak  

Sn-Pb Eutectic Assembly  

Pb-Free Assembly  

100

℃  

150

℃  

150

℃  

200

℃  

Temperature min (T

smin  

)

Temperature max (T

smax  

)

60-120 seconds  

60-120 seconds  

Time (Tsmin to Tsmax) (t  

s

)

Average ramp-up rate  

3

℃

/second max.  

3

℃

/second max.  

(T

smax

to T )  

P

Liquidous temperature (T  

Time at liquidous (t  

Peak package body Temperature  

(T )*  

Time (t  

classification temperature (T  

Average ramp-down rate (T  

Time 25

℃

to peak temperature  

L

)

183

℃  

217

℃  

L

)

60-150 seconds  

60-150 seconds  

See Classification Temp in table 1

 

SeeClassification Tempin table 2  

p

P

)** within 5

℃

of the specified  

20** seconds  

30** seconds  

c

)

p

to T

smax  

)

6

℃

/second max.  

6

℃

/second max.  

6 minutes max.  

8 minutes max.  

*Tolerance for peak profile Temperature (T

p

) is defined as a supplier minimum and a user maximum.  

** Tolerance for time at peak profile temperature (t ) is defined as a supplier minimum and a user maximum.  

p

V1.0

2019  

8

HYG035N06LS1C2  

Table 1.SnPb Eutectic Process – Classification Temperatures (Tc)  

Package  

Thickness  

＜

2.5 mm  

≥2.5 mm  

Volume mm

³  

<350  

Volume mm

³  

≥

350  

235

℃  

220

℃  

220

℃  

220

℃  

Table 2.Pb-free Process – Classification Temperatures (Tc)  

Package  

Thickness  

<1.6 mm  

Volume mm

³  

<350  

Volume mm

³  

350-2000  

260

℃  

Volume mm

³  

≥

2000  

260

℃  

260

℃  

1.6 mm – 2.5 mm  

≥

2.5 mm  

260

℃  

250

℃  

245

℃  

250

℃  

245

℃  

245

℃  

Reliability Test Program  

Test item  

SOLDERABILITY  

HTRB  

Method  

Description  

JESD-22, B102  

JESD-22, A108  

JESD-22, A102  

JESD-22, A104  

5 Sec, 245

℃  

168 Hrs /500 Hrs /1000 Hrs, Bias @ 150

℃  

96 Hrs, 100%RH, 2atm, 121

℃  

500 Cycles, -55

℃

~150

℃  

PCT  

TCT  

Customer Service  

Worldwide Sales and Service: sales@hymexa.com  

Technical Support:

T

e

Huayi Microelectronics Co., Ltd.  

No.8928,Shangji Road,Economic and

T

echnological Development Zone,Xi’an,China  

TEL: (86-029) 86685706  

FAX: (86-029) 86685705  

E-mail: sales@hymexa.com  

V1.0

2019  

9