HUAYI-HYG035N06LS1D
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HYG035N06LS1D
Single N-Channel Enhancement Mode MOSFET
Feature
Pin Description
65V/150A
R
DS(ON)
= 3.5 mΩ(typ.) @V
GS
= 10V
R
DS(ON)
= 5.3 mΩ(typ.) @V
GS
= 4.5V
100% Avalanche Tested
Reliable and Rugged
S
D
G
Halogen- Free Devices Available
Applications
Load Switch
Motor drive for electric tools
Single N-Channel MOSFET
Ordering and Marking Information
Package Code
D: TO-252-2L
D
G035N06
XYMXXXXXX
Date Code
XYMXXXXXX
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-
Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
V1.0
2019
1
HYG035N06LS1D
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(
T
c=25
℃
Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
65
V
V
Gate-Source Voltage
+20/-12
-55 to 175
-55 to 175
150
Junction
T
emperature Range
Storage
T
emperature Range
Source Current-Continuous(Body Diode)
℃
℃
A
T
STG
I
S
T
c
=25
℃
Mounted on Large Heat Sink
T
c
=25
℃
T
c
=25
℃
T
c
=100
℃
T
c
=25
℃
T
c
=100
℃
410
150
107
183
91.5
0.82
60.0
209
A
A
I
DM
Pulsed Drain Current *
I
D
Continuous Drain Current
A
W
P
D
Maximum Power Dissipation
W
R
JC
R
JA
E
AS
℃
/W
℃
/W
mJ
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient **
Single Pulsed-Avalanche Energy ***
L=0.3mH
Note:
*
Repetitive rating
；
pulse width limited by max.junction temperature.
** Surface
mounted on FR-4 board.
*** Limited
by T
J
max , starting T
J
=25
℃
, L =
0.3mH
,
R
G
=25
Ω.
,
V
GS
=10V
.
Electrical Characteristics
(Tc =25
℃
Unless Otherwise Noted)
HYG035N06LS1
Symbol
Parameter
Test Conditions
Unit
Min
Typ.
Max
Static Characteristics
V
GS
=
0V
,I
DS
=250μA
V
DS
=65
V,
V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
65
–
–
–
–
–
1
V
μA
μA
I
DSS
Drain-to-Source Leakage Current
T
J
=125
℃
–
50
V
DS
=V
GS
, I
DS
=250μA
V
GS(th)
Gate Threshold Voltage
1
1.5
3
V
I
GSS
Gate-Source Leakage Current
V
GS
=+
20V/-12V,V
DS
=0V
V
GS
=10V,I
DS
=20A
–
–
–
–
±
100
4.0
nA
mΩ
mΩ
3.5
5.3
R
DS(ON)
Drain-Source On-State Resistance
V
GS
=4.5V,I
DS
=20A
6.0
Diode Characteristics
Diode Forward Voltage
I
SD
=20A,V
GS
=0V
V
SD
*
t
rr
–
–
–
0.8
42
35
1.2
V
Reverse Recovery Time
Reverse Recovery Charge
–
–
ns
nC
I
SD
=10A,dI
SD
/dt
=100A/μs
Q
rr
V1.0
2019
2
HYG035N06LS1D
Electrical Characteristics (Cont.)
(Tc =25
℃
Unless Otherwise Noted)
HYG035N06LS1
Symbol
Parameter
Test Conditions
Unit
Min
Typ.
Max
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
Gate Resistance
V
GS
=0V
,
V
DS
=0V,F=1MHz
V
GS
=
0V
,
–
–
–
–
–
–
–
–
1.8
3687
1610
112
15
–
–
–
–
–
–
–
–
Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DS
=
25V
,
pF
Frequency=1.0MHz
29
V
DD
=30V,
R
G
=6
Ω,
I
DS
=10A,V
GS
=10V
ns
t
d(OFF)
92
T
f
95
Gate Charge
Characteristics
Q
g
Q
g
Total Gate Charge
（
V
GS
=10V
）
–
–
–
–
76.3
41.7
11.0
23.0
–
–
–
–
Total Gate Charge
（
V
GS
=4.5V)
V
DS
=48V, V
GS
=10V,
I
D
=20A
nC
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain Charge
Note: *Pulse test
，
pulse width ≤ 300us
，
duty cycle ≤ 2%
V1.0
2019
3
HYG035N06LS1D
Typical Operating Characteristics
Figure 1: Power Dissipation
Figure 2: Drain Current
Tc-Case Temperature(
℃
)
Tc-Case Temperature(
℃
)
Figure 3: Safe Operation Area
Figure 4: Thermal Transient Impedance
V
DS
-Drain-Source Voltage(V)
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 5: Output Characteristics
Figure 6: Drain-Source On Resistance
V
DS
-Drain-Source Voltage (V)
I
D
-Drain Current(A)
V1.0
2019
4
HYG035N06LS1D
Typical Operating Characteristics(Cont.)
Figure 7: On-Resistance vs. Temperature
Figure 8: Source-Drain Diode Forward
Tj-Junction
T
emperature (
℃
)
V
SD
-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics
Figure 10: Gate Charge Characteristics
V
DS
-Drain-Source Voltage (V)
Q
G
-Gate Charge (
nC
)
V1.0
2019
5
HYG035N06LS1D
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
V1.0
2019
6
HYG035N06LS1D
Device Per Unit
Package Type
Unit
Quantity
TO-252-2L
Tube
75
Package Information
TO-252-2L
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.00
0.97
0.68
5.20
0.43
5.98
NOM
2.30
–
MAX
2.40
0.20
1.17
0.90
5.50
0.63
6.22
A
A1
A2
b
1.07
0.78
5.33
0.53
6.10
5.30REF
6.60
–
b3
c
D
D1
E
6.40
4.63
6.80
–
E1
e
2.286BSC
10.10
1.50
2.90REF
0.51BSC
–
H
9.40
1.38
10.50
1.75
L
L1
L2
L3
L4
L5
θ
0.88
–
1.28
1.00
1.95
8°
–
1.65
0°
1.80
–
V1.0
2019
7
HYG035N06LS1D
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100
℃
150
℃
150
℃
200
℃
Temperature min (T
smin
)
Temperature max (T
smax
)
60-120 seconds
60-120 seconds
Time (Tsmin to Tsmax) (t
s
)
Average ramp-up rate
3
℃
/second max.
3
℃
/second max.
(T
smax
to T )
P
Liquidous temperature (T
Time at liquidous (t
Peak package body Temperature
(T )*
Time (t
classification temperature (T
Average ramp-down rate (T
Time 25
℃
to peak temperature
L
)
183
℃
217
℃
L
)
60-150 seconds
60-150 seconds
See Classification Temp in table 1
SeeClassification Tempin table 2
p
P
)** within 5
℃
of the specified
20** seconds
30** seconds
c
)
p
to T
smax
)
6
℃
/second max.
6
℃
/second max.
6 minutes max.
8 minutes max.
*Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t ) is defined as a supplier minimum and a user maximum.
p
V1.0
2019
8
HYG035N06LS1D
Table 1.SnPb Eutectic Process – Classification Temperatures (Tc)
Package
Thickness
＜
2.5 mm
≥2.5 mm
Volume mm
³
<350
Volume mm
³
≥
350
235
℃
220
℃
220
℃
220
℃
Table 2.Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm
³
<350
Volume mm
³
350-2000
260
℃
Volume mm
³
≥
2000
260
℃
260
℃
1.6 mm – 2.5 mm
≥
2.5 mm
260
℃
250
℃
245
℃
250
℃
245
℃
245
℃
Reliability Test Program
Test item
SOLDERABILITY
HTRB
Method
Description
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
5 Sec, 245
℃
168 Hrs /500 Hrs /1000 Hrs, Bias @ 150
℃
96 Hrs, 100%RH, 2atm, 121
℃
500 Cycles, -55
℃
~150
℃
PCT
TCT
Customer Service
Worldwide Sales and Service: sales@hymexa.com
Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and
T
echnological Development Zone,Xi’an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
V1.0
2019
9
