HUAYI-HYG080ND03LA1S
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HYG080ND03LA1S
Dual N-Channel Enhancement Mode MOSFET
Feature
Pin Description
30V/11A
R
DS(ON)
=9.5 m
Ω
(typ.)@V
GS
= 10V
R
DS(ON)
=12.5 m
Ω
(typ.)@V
GS
= 4.5V
100% Avalanche Tested
Reliable and Rugged
Halogen Free and Green Devices Available
(RoHS Compliant)
SOP8L
Applications
Power Management for DC/DC
Switching Application
Wireless Power
Dual N-Channel
MOSFET
Ordering and Marking Information
Package Code
S: SOP8L
S
G080ND03L
XXXYWXXXXX
Date Code
XXXYWXXXXX
Note:HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi-
Nationfinish;which are fully compliant with RoHS.HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.HUAYI defines
“
Green
”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
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HYG080ND03LA1S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(
T
c
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
30
±20
V
V
Gate-Source Voltage
Junction
T
emperature Range
Storage
T
emperature Range
Source Current-Continuous(Body Diode)
-55 to 150
-55 to 150
11
°C
°C
A
T
STG
I
S
T
c
=25°C
Mounted on Large Heat Sink
T
c
=25°C
T
c
=25°C
T
c
=70°C
T
c
=25°C
T
c
=70°C
44
11
A
A
I
DM
Pulsed Drain Current *
I
D
Continuous Drain Current
8.8
2.5
1.6
50
A
W
P
D
Maximum Power Dissipation
W
R
J
c
R
J
A
E
AS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
SinglePulsed-Avalanche Energy **
°C/W
°C/W
mJ
80
L=0.1mH
12
Note:
*
Repetitive rating
；
pulse width limited by max.junction temperature.
Limited by T
J
max , starting T
J
=25°C
, L =
0.1mH
, R
G
= 25
Ω
,
V
GS
=10V
.
**
Electrical Characteristics
(Tc =25°C Unless Otherwise Noted)
HYG080ND03LA1
Symbol
Parameter
Test Conditions
Unit
Min
Typ.
Max
Static Characteristics
V
GS
=
0V
,I
DS
=250
μ
A
BV
DSS
Drain-Source Breakdown Voltage
30
–
–
–
V
V
DS
=
30
V
,
V
GS
=0V
1
50
μ
A
μ
A
V
I
DSS
Drain-to-Source LeakageCurrent
T
J
=125°C
–
–
V
DS
=V
GS
, I
DS
=250
μ
A
V
GS
=
±
20
V
,
V
DS
=0V
V
GS
=10V,I
DS
=10A
V
GS
=4.5V,I
DS
=5A
V
GS(th)
I
GSS
Gate Threshold Voltage
1
–
1.6
–
3
Gate-Source Leakage Current
±100
13
nA
–
9.5
12.5
R
DS(ON)
*
Drain-Source On-State Resistance
m
Ω
1
6
Diode Characteristics
Diode Forward Voltage
I
SD
=1A,V
GS
=0V
–
–
–
0.7
15
35
1.0
V
V
SD
*
t
rr
Reverse Recovery Time
Reverse Recovery Charge
–
–
ns
nC
I
SD
=10A,dI
SD
/dt
=100A/
μs
Q
rr
V1.
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HYG080ND03LA1S
Electrical Characteristics (Cont.)
(Tc =25°C Unless Otherwise Noted)
HYG080ND03LA1
Symbol
Parameter
Test Conditions
Unit
Min
Typ.
Max
Dynamic Characteristics
V
GS
=0V
,
V
DS
=0V,F=1
MHz
R
G
Gate Resistance
–
1.
0
–
Ω
680
150
70
V
GS
=
0V
,
C
iss
C
oss
C
rss
t
d(ON)
T
r
Input Capacitance
–
–
–
–
–
–
–
–
–
–
–
–
–
–
V
DS
=
15
V
,
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
pF
Frequency=1.0MHz
4.8
12.5
27.6
8.2
V
DD
=10V,
R
G
=4
Ω,
ns
I
DS
=
10
A,V
GS
=10V
t
d(OFF)
T
f
Turn-off Delay Time
Turn-off Fall Time
Gate Charge
Characteristics
Q
g
Q
g
Total Gate Charge
（
V
GS
=10V
）
–
–
–
–
16.1
8
.
5
–
–
–
–
V
DS
=
24
V, I
D
=
6
A
Total Gate Charge
（
V
GS
=4.5V)
nC
2.0
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain Charge
3.
7
5
Note: *Pulse test
，
pulse width ≤ 300us
，
duty cycle ≤ 2%
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HYG080ND03LA1S
Typical Operating Characteristics
Figure 1: Power Dissipation
Figure 2: Drain Current
T
c
-Case
T
emperature(
℃
)
T
c
-Case
T
emperature(
℃
)
Figure 3: Safe Operation Area
Figure 4: Thermal Transient Impedance
V
DS
-Drain-Source Voltage(V)
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 5: Output Characteristics
Figure 6: Drain-Source On Resistance
V
DS
-Drain-Source Voltage (V)
I
D
-Drain Current(A)
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HYG080ND03LA1S
Typical Operating Characteristics
Figure 7: On-Resistance vs. Temperature
Figure 8: Source-Drain Diode Forward
Tj-Junction
T
e
mperature (
℃
)
V
SD
-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics
Figure 10: Gate Charge Characteristics
V
DS
-Drain-Source Voltage (V)
Q
G
-Gate Charge (
nC
)
V1.
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HYG080ND03LA1S
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
V1.
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HYG080ND03LA1S
Device Per Unit
Package Type
Unit
Quantity
SOP8L
Reel
2500
Package Information
SOP8L
V1.
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HYG080ND03LA1S
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
150 °C
200 °C
Temperature min (T
smin
)
Temperature max (T
smax
)
60-120 seconds
60-120 seconds
Time (Tsmin to Tsmax) (t
Average ramp-up rate
s
)
3 °C/second max.
3°C/second max.
(T
smax
to T )
P
Liquidous temperature (T
Time at liquidous (t
Peak package body Temperature
(T )*
Time (t
classification temperature (T
Average ramp-down rate (T
Time 25°C to peak temperature
L
)
183 °C
217 °C
L
)
60-150 seconds
60-150 seconds
See Classification Temp in table 1
SeeClassification Tempin table 2
p
P
)** within 5°C of the specified
20** seconds
30** seconds
c
)
p
to T
smax
)
6 °C/second max.
6 minutes max.
6 °C/second max.
8 minutes max.
*Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t ) is defined as a supplier minimum and a user maximum.
p
V1.
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HYG080ND03LA1S
T
a
ble 1.SnPb Eutectic Process
–
Classification
T
emperatures (Tc)
Package
Thickness
＜
2.5 mm
≥2.5 mm
Volume mm
³
<350
Volume mm
³
≥
350
235 °C
220 °C
220 °C
220 °C
T
a
ble 2.Pb-free Process
–
Classification
T
emperatures (
T
c
)
Package
Thickness
<1.6 mm
Volume mm
³
<350
Volume mm
³
350-2000
260 °C
Volume mm
³
≥
2000
260 °C
260 °C
1.6 mm
–
2.5 mm
≥
2.5 mm
260 °C
250 °C
245 °C
250 °C
245 °C
245 °C
Reliability Test Program
Test item
Method
Description
SOLDERABILITY
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
5 Sec, 245°C
HTRB
PCT
168 Hrs 500Hrs 1000 Hrs, Bias @ 125°C
96 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -55°C~150°C
TCT
Customer Service
Worldwide Sales and Service: sales@hymexa.com
Xi’an Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and
T
e
chnological Development Zone,Xi’an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
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