HUAYI-HYG090ND06LS1C2
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HYG090ND06LS1C2
Dual N-Channel Enhancement Mode MOSFET
Feature
Pin Description
60V/56A
R
DS(ON)
= 8.0 m
Ω
(typ.) @V
GS
= 10V
R
DS(ON)
= 12.2 m
Ω
(typ.) @V
GS
= 4.5V
100% Avalanche Tested
Reliable and Rugged
Halogen Free and Green Devices Available
(RoHS Compliant)
PIN1
PDFN8L(5×6)
Applications
Switching Application
Power Management for DC/DC
Dual N-Channel
MOSFET
Ordering and Marking Information
Package Code
C2: PDFN8L(5×6)
C2
G090ND06
XXXYWXXXXX
Date Code
XXXYWXXXXX
Note:HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plateTermi-
Nationfinish;which are fully compliant with RoHS.HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature.HUAYI defines
“Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.
V1.0
1
HYG090ND06LS1C2
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(
T
c
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
60
±20
V
V
Gate-Source Voltage
Junction
T
emperature Range
Storage
T
emperature Range
Source Current-Continuous(Body Diode)
-55 to 175
-55 to 175
56
°C
°C
A
T
STG
I
S
T
c
=25°C
Mounted on Large Heat Sink
T
c
=25°C
T
c
=25°C
T
c
=70°C
T
c
=25°C
T
c
=70°C
220
56
A
A
I
DM
Pulsed Drain Current *
I
D
Continuous Drain Current
39.5
60
A
W
P
D
Maximum Power Dissipation
30
W
R
θ
J
c
R
θ
J
A
E
AS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
SinglePulsed-Avalanche Energy **
2.5
50
°C/W
°C/W
mJ
L=0.3mH
83
Note:
*
Repetitive rating
；
pulse width limited by max.junction temperature.
Limited by T
J
max , starting T
J
=25°C
, L =
0.3mH
, R
G
= 25
Ω
,
V
GS
=10V
.
**
Electrical Characteristics
(Tc =25°C Unless Otherwise Noted)
HYG090ND06LS1
Symbol
Parameter
Test Conditions
Unit
Min
Typ.
Max
Static Characteristics
V
GS
=
0V
,I
DS
=250
μ
A
BV
DSS
Drain-Source Breakdown Voltage
60
–
–
–
V
V
DS
=
60
V
,
V
GS
=0V
1
50
μ
A
μ
A
V
I
DSS
Drain-to-Source LeakageCurrent
T
J
=125°C
–
–
V
DS
=V
GS
, I
DS
=250
μ
A
V
GS
=
±
20
V
,
V
DS
=0V
V
GS
=10V,I
DS
=20A
V
GS
=4.5V,I
DS
=20A
V
GS(th)
I
GSS
Gate Threshold Voltage
1
–
1.9
–
3
Gate-Source Leakage Current
±100
9.8
14.8
nA
–
8.0
12.2
R
DS(ON)
*
Drain-Source On-State Resistance
m
Ω
–
Diode Characteristics
Diode Forward Voltage
I
SD
=20A,V
GS
=0V
–
–
–
0.87
22.9
15
–
–
–
V
V
SD
*
t
rr
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
I
SD
=20A,dI
SD
/dt
=100A/
μ
s
Q
rr
V1.0
2
HYG090ND06LS1C2
Electrical Characteristics (Cont.)
(Tc =25°C Unless Otherwise Noted)
HYG090ND06LS1
Symbol
Parameter
Test Conditions
Unit
Min
Typ.
Max
Dynamic Characteristics
VGS=0V,VDS=0V,
F=1MHz
R
G
Gate Resistance
–
2.1
926
505
39
–
Ω
C
iss
Input Capacitance
–
–
–
–
–
–
–
–
V
GS
=
0V
,
C
oss
Output Capacitance
V
DS
=
25V
,
pF
Frequency=1.0MHz
C
rss
t
d(ON)
T
r
Reverse Transfer Capacitance
Turn-on Delay Time
7.7
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
–
–
–
–
–
–
V
DD
=30V,
R
G
=4
Ω,
31.7
18.4
34.8
ns
I
DS
=20A,V
GS
=10V
t
d(OFF)
T
f
Gate Charge
Characteristics
Q
g
Q
g
Total Gate Charge
（
V
GS
=10V
）
–
–
–
–
–
–
–
–
18.5
9.4
Total Gate Charge
（
V
GS
=4.5V)
V
DS
=48V, V
GS
=10V,
I
D
=20A
nC
Q
gs
Q
gd
Gate-Source Charge
Gate-Drain Charge
3.9
4.8
Note: *Pulse test
，
pulse width
≤
300us
，
duty cycle
≤
2%
V1.0
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HYG090ND06LS1C2
Typical Operating Characteristics
Figure 1: Power Dissipation
Figure 2: Drain Current
T
c
-Case
T
emperature(
℃
)
T
c
-Case
T
emperature(
℃
)
Figure 3: Safe Operation Area
Figure 4: Thermal Transient Impedance
V
DS
-Drain-Source Voltage(V)
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 5: Output Characteristics
Figure 6: Drain-Source On Resistance
V
DS
-Drain-Source Voltage (V)
I
D
-Drain Current(A)
V1.0
4
HYG090ND06LS1C2
Typical Operating Characteristics
Figure 7: On-Resistance vs. Temperature
Figure 8: Source-Drain Diode Forward
Tj-Junction
T
emperature (
℃
)
V
SD
-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics
Figure 10: Gate Charge Characteristics
V
DS
-Drain-Source Voltage (V)
Q
G
-Gate Charge (
nC
)
V1.0
5
HYG090ND06LS1C2
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
V1.0
6
HYG090ND06LS1C2
Device Per Unit
Package Type
Unit
Quantity
PDFN8L(5×6)
Reel
5000
Package Information
PDFN8L(5×6)
V1.0
7
HYG090ND06LS1C2
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
150 °C
200 °C
Temperature min (T
smin
)
Temperature max (T
smax
)
60-120 seconds
60-120 seconds
Time (Tsmin to Tsmax) (t
Average ramp-up rate
s
)
3 °C/second max.
3°C/second max.
(T
smax
to T
Liquidous temperature (T
Time at liquidous (t
Peak package body Temperature
(T )*
Time (t
classification temperature (T
Average ramp-down rate (T
Time 25°C to peak temperature
P
)
L
)
183 °C
217 °C
L
)
60-150 seconds
60-150 seconds
See Classification Temp in table 1
SeeClassification Tempin table 2
p
P
)** within 5°C of the specified
20** seconds
30** seconds
c
)
p
to T
smax
)
6 °C/second max.
6 minutes max.
6 °C/second max.
8 minutes max.
*Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t ) is defined as a supplier minimum and a user maximum.
p
V1.0
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HYG090ND06LS1C2
Table 1.SnPb Eutectic Process – Classification
T
emperatures (Tc)
Package
Thickness
＜
2.5 mm
≥2.5 mm
Volume mm
³
Volume mm
³
≥
350
<350
235 °C
220 °C
220 °C
220 °C
Table 2.Pb-free Process – Classification Temperatures (
T
c
)
Package
Thickness
<1.6 mm
Volume mm
³
<350
Volume mm
³
350-2000
260 °C
Volume mm
³
≥
2000
260 °C
260 °C
1.6 mm – 2.5 mm
≥
2.5 mm
260 °C
250 °C
245 °C
250 °C
245 °C
245 °C
Reliability Test Program
Test item
SOLDERABILITY
PRECON
Method
Description
JESD-22, B102
JESD-22, A113
JESD-22, A108
JESD-22, A108
5 Sec, 245°C
30°C/60%/192Hrs
HTRB
168/500/1000 Hrs, Bias @ 150°C
168 /500/1000Hrs, V
gs
100% @ 150°C
96 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -55°C~150°C
HTGB
PCT
TCT
JESD-22, A102
JESD-22, A104
Customer Service
Worldwide Sales and Service: sales@hymexa.com
Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and
T
echnological Development Zone,Xi’an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
V1.0
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