HUAYI-HYG210P06LQ1D
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HYG210P06LQ1 D/U/V
P-Channel Enhancement Mode MOSFET
Feature
Pin Description
-60V/-40A
R
DS(ON)
= 19m
Ω
(typ.) @V
GS
= -10V
R
DS(ON)
= 25m
Ω
(typ.) @V
GS
= -4.5V
S
D
G
S
100% avalanche tested
D
G
Reliable and Rugged
S
D
G
Halogen Free and Green Devices Available
(RoHS Compliant)
TO-252-2L
TO-251-3L
TO-251-3S
Applications
Power Management in DC/DC
Load switching.
P-Channel MOSFET
Motor control.
Ordering and Marking Information
Package Code
D: TO-252-2L
Date Code
U: TO-251-3L
V:TO-251-3S
D
U
V
G210P06
G210P06
G210P06
XY
M
XXXXXX
XY
M
XXXXXX
X
YM
XXXXXX
XY
M
XXXXXX
Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-
nation finish; which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).
HUAYI reserves the right to make changes to improve reliability or manufacturability without notice, and Advise
customers to obtain the latest version of relevant information to verify before placing orders.
V1.
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HYG210P06LQ1 D/U/V
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(
T
c
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
-60
±20
V
V
Gate-Source Voltage
Junction
T
emperature Range
Storage
T
emperature Range
Drain Current-Continuous
-55 to 175
-55 to 175
-40
°C
°C
A
T
STG
I
S
T
c
=25°C
Mounted on Large Heat Sink
T
c
=25°C
T
c
=25°C
T
c
=100°C
T
c
=25°C
T
c
=100°C
-140
-40
A
A
I
DM
Pulsed Drain Current *
ID
Continuous Drain Current
-28
A
60
W
P
D
Maximum Power Dissipation
30
W
R
θ
J
C
R
θ
J
A
E
AS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient **
SinglePulsed-Avalanche Energy ***
2.5
°C/W
°C/W
mJ
110
289***
L=0.3mH
Note:
*
**
Repetitive rating; pulse width limited by max junction temperature.
Surface mounted on FR-4 board.
***
Limited by T
J
max , starting T
J
=25°C
, L = 0.3mH, R
G
= 25
Ω
, V
GS
=-10V.
Electrical Characteristics
(Tc =25°C Unless Otherwise Noted)
HYG210P06LQ1
Symbol
Parameter
Test Conditions
Unit
Min
Typ
Max
Static Characteristics
V
GS
=
0V
,I
DS
=-250uA
V
DS
=
-60
V
, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
-60
–
–
–
-1
V
–
uA
uA
V
I
DSS
Drain-to-Source Leakage Current
T
J
=125°C
–
–
-50
-3.0
±100
25
V
DS
=V
GS
, I
DS
=-250uA
V
GS
=
±
20
V
,
V
DS
=0V
V
GS
=-10V,I
D
= -20A
V
GS
=-4.5V,I
D
= -20A
V
GS(th)
I
GSS
Gate Threshold Voltage
-1.0
-1.7
–
Gate-Source Leakage Current
–
–
nA
m
Ω
m
Ω
19
25
R
DS(ON)
*
Drain-Source On-state Resistance
32
Diode Characteristics
Diode Forward Voltage
I
SD
= -20A,V
GS
=0V
–
–
–
-0.9
28
-1.3
V
V
SD
*
t
rr
Reverse Recovery Time
Reverse Recovery Charge
–
–
ns
nC
I
SD
= -20A
,
dI
/dt
=100A/us
Q
rr
25
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HYG210P06LQ1 D/U/V
Electrical Characteristics (Cont.)
(Tc =25°C Unless Otherwise Noted)
HYG210P06LQ1
Symbol
Parameter
Test Conditions
Unit
Min
Typ
Max
Dynamic Characteristics
V
GS
=0V
,
V
DS
=0V,
F=1MHz
R
G
Gate Resistance
–
6.4
–
Ω
Ciss
Coss
Crss
t
d(ON)
T
r
Input Capacitance
–
–
–
–
–
–
–
3679
123
60
–
–
–
–
–
–
–
V
GS
=0V,
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
V
DS
=-25V,
pF
Frequency=1.0MHz
11
17
V
DD
= -25V,
R
G
=3
Ω,
ns
I
DS
= -20A,V
GS
=-10V
t
d(OFF)
T
f
Turn-off Delay Time
Turn-off Fall Time
73
31
Gate Charge
Characteristics
Qg
Qgs
Qgd
Total Gate Charge
–
–
–
90
6
–
–
–
V
DS
= -48V, V
GS
= -10V
，
nC
Gate-Source Charge
Gate-Drain Charge
I
D
= -20A,
18
Note: *Pulse test; pulse width
≤
300us
，
duty cycle
≤
2%
V1.
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HYG210P06LQ1 D/U/V
Typical Operating Characteristics
Figure 1: Power Dissipation
Figure 2: Drain Current
T
c
-Case
T
emperature(
℃
)
Tc-Case Temperature(
℃
)
Figure 3: Safe Operation Area
Figure 4: Thermal Transient Impedance
-V
DS
-Drain-Source Voltage(V)
Maximum Effective Transient Thermal
Impedance, Junction-to-Case
Figure 5: Output Characteristics
Figure 6: Drain-Source On Resistance
-V
DS
-Drain-Source Voltage (V)
– I
D
-Drain Current(A)
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HYG210P06LQ1 D/U/V
Typical Operating Characteristics(Cont.)
Figure 7: On-Resistance vs. Temperature
Figure 8: Source-Drain Diode Forward
Tj-Junction
T
emperature (
℃
)
-V
SD
-Source-Drain Voltage(V)
Figure 9: Capacitance Characteristics
Figure 10: Gate Charge Characteristics
-V
DS
-Drain-Source Voltage (V)
Q
G
-Gate Charge (
nC
)
V1.
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HYG210P06LQ1 D/U/V
Avalanche Test Circuit
Switching Time Test Circuit
Gate Charge Test Circuit
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HYG210P06LQ1 D/U/V
Device Per Unit
Package Type
TO-252-2L
Unit
Tube
Quantity
75
TO-252-2L
Reel
Tube
Tube
2500
75
TO-251-3L
TO-251-3S
75
Package Information
TO-252-2L
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.00
0.97
0.68
5.20
0.43
5.98
NOM
2.30
–
MAX
2.40
0.20
1.17
0.90
5.50
0.63
6.22
A
A1
A2
b
1.07
0.78
5.33
0.53
6.10
5.30REF
6.60
–
b3
c
D
D1
E
6.40
4.63
6.80
–
E1
e
2.286BSC
10.10
1.50
2.90REF
0.51BSC
–
H
9.40
1.38
10.50
1.75
L
L1
L2
L3
L4
L5
θ
0.88
–
1.28
1.00
1.95
8°
–
1.65
0°
1.80
–
V1.
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HYG210P06LQ1 D/U/V
TO-251-3L
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.97
0.68
0.00
0.00
5.20
0.43
5.98
NOM
2.30
MAX
2.40
1.17
0.90
0.10
0.10
5.50
0.63
6.22
A
A2
b
1.07
0.78
b2
b2′
b3
c
0.04
0.04
5.33
0.53
D
6.10
D1
E
5.30REF
6.60
6.40
4.63
6.80
–
E1
e
–
2.286BSC
16.52
9.40
H
16.22
9.15
0.88
1.65
16.82
9.65
1.28
1.95
L1
L3
L5
1.02
1.80
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HYG210P06LQ1 D/U/V
TO-251-3S
COMMON DIMENSIONS
mm
SYMBOL
MIN
2.20
0.97
0.68
5.20
0.43
5.98
NOM
2.30
MAX
2.40
1.17
0.90
5.50
0.63
6.22
A
A2
b
1.07
0.78
b3
c
5.33
0.53
D
6.10
D1
E
5.30REF
6.60
6.40
4.63
6.80
–
E1
e
–
2.286BSC
11.22
4.10
H
10.00
3.90
0.88
1.65
11.44
4.30
1.28
1.95
L1
L3
L5
1.02
1.80
V1.
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HYG210P06LQ1 D/U/V
Classification Profile
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
100 °C
150 °C
150 °C
200 °C
Temperature min (T
smin
)
Temperature max (T
smax
)
60-120 seconds
60-120 seconds
Time (Tsmin to Tsmax) (t
Average ramp-up rate
s
)
3 °C/second max.
3°C/second max.
(T
smax
to T
Liquidous temperature (T
Time at liquidous (t
Peak package body Temperature
(T )*
Time (t
classification temperature (T
Average ramp-down rate (T
Time 25°C to peak temperature
P
)
L
)
183 °C
217 °C
L
)
60-150 seconds
60-150 seconds
See Classification Temp in table 1
See Classification Temp in table 2
p
P
)** within 5°C of the specified
20** seconds
30** seconds
c
)
p
to T
smax
)
6 °C/second max.
6 minutes max.
6 °C/second max.
8 minutes max.
*Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
p
) is defined as a supplier minimum and a user maximum.
V1.
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HYG210P06LQ1 D/U/V
Table 1.SnPb Eutectic Process – Classification
T
emperatures (Tc)
Package
Thickness
＜
2.5 mm
≥2.5 mm
Volume mm
³
<350
Volume mm
³
≥
350
235 °C
220 °C
220 °C
220 °C
Table 2.Pb-free Process – Classification Temperatures (
T
c
)
Package
Thickness
<1.6 mm
Volume mm
³
<350
Volume mm
³
350-2000
260 °C
Volume mm
³
≥
2000
260 °C
260 °C
1.6 mm – 2.5 mm
≥
2.5 mm
260 °C
250 °C
245 °C
250 °C
245 °C
245 °C
Reliability Test Program
Test item
Method
Description
SOLDERABILITY
JESD-22, B102
JESD-22, A108
JESD-22, A102
JESD-22, A104
5 Sec, 245°C
HTRB
PCT
168 Hrs/500 Hrs/1000Hrs, Bias @ 150°C
96 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -55°C~150°C
TCT
Customer Service
Worldwide Sales and Service: sales@hymexa.com
Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and
T
echnological Development Zone,Xi’an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: sales@hymexa.com
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