HUXN-2SD882U
| Part # | HUXN-2SD882U |
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2SD882PU
NPN Silicon Power Transistor
The transistor is subdivided into four groups, R, Q,
P and E, according to its DC current gain.
MARKING:2SD882PU
O
Absolute Maximum Ratings (T
a
= 25
C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
Unit
V
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
40
30
V
5
V
Collector Current
3
A
Peak Collector Current (t = 10 ms)
I
CP
7
A
O
Total power dissipation (T
a
= 25
C)
1
10
W
W
P
tot
Total power dissipation (T
c
= 2
5
O
C)
Junction Temperature
P
tot
O
C
150
T
j
O
Storage Temperature Range
T
stg
– 55 to + 150
C
Characteristics at T
a
= 25
O
C
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at V
CE
= 2 V, I
C
= 20 mA
at V
CE
= 2 V, I
C
= 1 A Current Gain Group
h
FE
h
FE
h
FE
h
FE
h
FE
30
60
100
160
200
–
–
–
–
–
–
–
–
–
–
–
R
Q
P
E
120
200
320
400
Collector Base Cutoff Current
at V
CB
= 30 V
I
CBO
I
EBO
–
–
–
–
–
–
–
–
1
1
µA
µA
V
Emitter Base Cutoff Current
at V
EB
= 3 V
Collector Emitter Saturation Voltage
at I
C
= 2 A, I
B
= 0.2 A
V
CE(sat)
V
BE(sat)
f
T
–
0.5
Base Emitter Saturation Voltage
at I
C
= 2 A, I
B
= 0.2 A
–
2
–
V
Gain Bandwidth Product
at V
CE
= 5 V, I
C
= 0.1 A
Output Capacitance
90
45
MHz
pF
C
ob
–
at V
CB
= 10 V, f = 1 MHz
+86-769-22857832
Rev.01
Page
1
o
3
f
2SD882PU
TYPICAL CHARACTERISTICS (Ta=25
o
C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
THERMAL RESISTANCE vs.
PULSE WIDTH
DERATING CURVES FOR ALL TYPES
NOTE
V
CE
=10V
I
C
=1.0A
Duty=0.001
1.
Aluminum heat sink
of 1.0 mm thickness.
2.
With no insulator film.
3.With silicon compound.
30
10
100
80
10
3
8
6
60
40
1
4
2
0.3
20
0
0
0.1
0.3
1 3
10 30
100 300 1000
0
50
100
150
0
100
150
PW-Pulse Width-mS
T
a
-Ambient Temperature –
o
C
Tc-Case Temperature –
o
C
DC CURRENT GAIN, BASE TO EMITTER
VOLTAGE vs. COLLECTOR CURRENT
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
SAFE OPERATING AREAS
1000
300
2.0
1.6
1.2
V
CE
=2.0V
Pulse Test
Pulse Test
10
3
I
C
(pulse) MAX.(PW 10ms,Duty Cycle 50%)
I
C
(DC) MAX.
10
9
h
FE
100
60
7
1
6
30
3
0.3
0.8
0.4
4
10
6
1
V
BE
0.1
0.6
3
I
B
=1mA
2
0.3
NOTE
1.T
=25
o
C
3
C
0.03
0.01
2.Curves must be derated
Iinearly with increase of
temperature and Duty Cycle.
1
0.1
10
0.001 0.003 0.01 0.03 0.1
0.3
1
3
0
4
8
12
16
20
1
3
6 10
30 60
100
I
C
-Collector Current-A
V
CE
-Collector to Emitte
o
r Voltage-V
V
CE
-Collector to Emitter Voltage-V
BASE AND COLLECTOR SATURATION
VOLTAGE vs. COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT vs.
COLLCETOR CURRENT
INPUT AND OUTPUT CAPACITANCE vs.
REVERSE VOLTAGE
1000
300
10
3
V
CE
=5.0V
Forced air
cooling
f=1.0MHz
I
C
=10.I
B
Pulse Test
I
E
=0(C
ob
)
I
C
=0(C
ib
)
300
(with heat sink)
1
V
BE(sat)
C
ib
0.6
0.3
100
30
100
60
0.1
0.06
30
C
ob
0.03
V
CE(sat)
10
3
10
6
0.01
0.006
0.003
3
0.001 0.003
0.01 0.03
0.1 0.3
1
3
10
1
1
0.01
0.03
0.1
0.3
1
3
6 10
30 60
I
C
-Collector Current-A
I
C
-Collcetor Current-A
V
CB
-Collector to Base Voltage-V
V
EB
-Emitter to Base Voltage-V
+86-769-22857832
Rev.01
Page
2
o
3
f
