HUXN-BC807-40
| Part # | HUXN-BC807-40 |
Download  | HUXN-BC807-40 |
BC807
TRANSISTOR(PNP)
SOT-23 Plastic-Encapsulate Transistors
SOT-23
Features
Complementary to BC817
Power Dissipation of 300mW
High Stability and High Reliability
Mechanical Data
SOT-23 Small Outline Plastic Package
Epoxy UL: 94V-0
Mounting Position: Any
Maximum Ratings & Thermal Characteristics
(
Ratings at 25
℃
ambient temperature unless otherwise specified.)
Parameters
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
-50
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter -Base Voltage
-45
V
-5
V
Collector Current-Continuous
Collector Power Dissipation
Junction
T
e
mperature
-500
300
mA
mW
℃
P
C
T
j
150
Storage
T
e
mperature
T
s
tg
R
θJA
-55-+150
417
℃
Thermal resistance from junction to ambient
℃
/W
Electrical Characteristics
(
Ratings at 25
℃
ambient temperature unless otherwise specified).
Limits
Parameter
Symbols
Test Condition
I
C
=-10uA, I
E
=0
Unit
Min
-50
-45
-5
Max
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
V
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
I
C
=-10mA, I
B
=0
I
E
=-1uA, I
C
=0
V
CB
=-45V, I
E
=0
V
-100
-100
600
nA
nA
I
EBO
h
FE(1)
h
FE(2)
V
CE(sat)
V
EB
=-4V, I
C
=0
Emitter cut-off current
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
C
=-500mA
I
C
=-500mA, I
B
=-50mA
100
40
DC current gain
-0.70
-1.20
V
V
Collector-emitter saturation voltage
Base -emitter saturation voltage
Transition frequency
V
BE(sat)
f
T
I
C
=-500mA, I
B
=-50mA
V
CE
=-5V, I
C
=-10mA,f=100MHz
100
MHz
CLASSIFICATION OF h
FE(1)
RANK
RANGE
Marking
BC807-16
100-250
BC807-25
160-400
5B
BC807-40
250-600
5C
5A
6GMKꢀ
1
ꢀULꢀ
3
ꢀꢀꢀꢀꢀ
ꢀ
ꢁꢂꢃꢄꢂꢅꢃꢆꢆꢁꢇꢄꢁꢈꢆꢀꢀꢀꢀꢀꢀꢀꢉꢉꢉ
ꢀꢀꢀꢀꢀꢊꢋꢌꢍꢌꢎꢏꢊꢍꢐꢑꢒꢊꢐ
ꢀꢀꢀꢀꢀꢓꢔꢕꢒꢖꢗ
ꢀꢀꢀꢀꢀ
Typical characteristics
6GMKꢀ
2
ꢀULꢀ
3
ꢀꢀꢀꢀꢀ
ꢀ
ꢁꢂꢃꢄꢂꢅꢃꢆꢆꢁꢇꢄꢁꢈꢆꢀꢀꢀꢀꢀꢀꢀꢉꢉꢉ
ꢀꢀꢀꢀꢀꢊꢋꢌꢍꢌꢎꢏꢊꢍꢐꢑꢒꢊꢐ
ꢀꢀꢀꢀꢀꢓꢔꢕꢒꢖꢗ
ꢀꢀꢀꢀꢀ
SOT-23 PACKAGE OUTLINE
Plastic surface mounted package
6GMKꢀ
3
ꢀULꢀ
3
ꢀꢀꢀꢀꢀ
ꢀ
ꢁꢂꢃꢄꢂꢅꢃꢆꢆꢁꢇꢄꢁꢈꢆꢀꢀꢀꢀꢀꢀꢀꢉꢉꢉ
ꢀꢀꢀꢀꢀꢊꢋꢌꢍꢌꢎꢏꢊꢍꢐꢑꢒꢊꢐ
ꢀꢀꢀꢀꢀꢓꢔꢕꢒꢖꢗ
ꢀꢀꢀꢀꢀ
