HUXN-BSS123
| Part # | HUXN-BSS123 |
Download  | HUXN-BSS123 |
SOT-23 Plastic-Encapsulate MOSFETS
BSS123
N Channel MOSFET
SOT-23
I
D
V
(BR)DSS
R
DS(on)
MAX
@
Ω
10V
6
V
10
0
0.1
7
A
@
Ω
4.
5V
10
1. GATE
2. SOURCE
3. DRAIN
APPLICATION
FEATURE
Small Servo Motor Controls
Power MOSFET Gate Drivers
Surface Mount Package
High Density Cell Design for Extremely Low R
DS(ON)
Voltage Controlled Small Signal Switch
Rugged and Reliable
Switching Application
MARKING
Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
Symbol
Parameter
Value
Unit
N-MOSFET
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
I
D
100
±20
V
V
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
0.17
A
I
DM
I
S
0.68
A
Continous Source-Drain Diode Current
Power Dissipation
0.17
A
P
D
0.35
W
℃
/W
℃
℃
℃
Thermal Resistance from Junction to Ambient
(note 1)
Junction Temperature
R
θ
JA
T
J
357
150
Storage Temperature
T
STG
T
L
-55~+150
260
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
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Rev.01
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1
of
4
MOSFET ELECTRICAL
CHARACTERISTICS
unless otherwise specified
T =25
a
℃
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC CHARACTERISTICS
Drain-source breakdown voltage
V
(BR)DSS
V
GS
= 0V, I
D
=250µA
V
DS
=100V,V
GS
= 0V
V
DS
=20V,V
GS
= 0V
V
GS
=±20V, V
DS
= 0V
V
DS
=V
GS
, I
D
=250µA
V
GS
=4.5V, I
D
=0.17A
V
GS
=10V, I
D
=0.17A
V
DS
=10V, I
D
=170mA
I
S
=340mA, V
GS
= 0V
100
V
µA
nA
nA
V
1
10
±50
2.8
10
6
Zero gate voltage drain current
I
DSS
Gate-body leakage current
I
GSS
Gate threshold voltage
(note 2)
V
GS(th)
1
Ω
Drain-source on-resistance
(note 2)
R
DS(on)
Ω
Forward tranconductance
(note 2)
Diode forward voltage
g
FS
80
mS
V
V
SD
1.3
DYNAMIC CHARACTERISTICS (note 4)
Input Capacitance
60
15
6
C
iss
C
oss
C
rss
29
10
2
pF
pF
pF
Output Capacitance
V
DS
=25V,V
GS
=0V,f =1MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (note 3,4)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Notes :
t
d(on)
8
8
ns
ns
t
r
t
d(off)
t
f
V
GS
=10V,V
DD
=30V,
I
D
=2.8A,R
GEN
=50
Ω
13
16
2
ns
ns
Q
g
1.4
0.15
0.2
nC
nC
nC
V
V
DS
=10V,I
D
=0.22A,
GS
=10V
Q
gs
Q
gd
0.25
0.4
1.Surface mounted on FR4 board using the minimum recommended pad size.
2. Pulse Test : Pulse width=300
μ
s, duty cycle
≤
2%.
3. Switching characteristics are independent of operating junction temperature.
4. Graranted by design
，
not subject to producting.
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Rev.01
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4
7SLFDOꢀ&KDUDFWHULVWLFV
Output Characteristics
Transfer Characteristics
450
400
350
300
250
200
150
100
50
450
400
350
300
250
200
150
100
50
T
a
=25
℃
V
GS
=4V,5V,6V
V
DS
=3V
Pulsed
Pulsed
V
GS
=3V
T
a
=25
℃
T
a
=100
℃
V
GS
=2.5V
V
GS
=2V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
350
1.4
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
R
DS(ON)
V
GS
——
R
DS(ON)
I
D
——
6
5
4
3
2
30
25
20
15
10
5
Pulsed
T
a
=25
℃
Pulsed
I
D
=0.17A
V
GS
=4.5V
V
GS
=10V
250
T
a
=100
℃
T
a
=25
℃
0
50
100
150
200
300
0
1
2
3
4
5
6
7
8
9
10
DRAIN CURRENT
I
D
(mA)
GATE TO SOURCE VOLTAGE
V
GS
(V)
Threshold Voltage
I
S
——
V
SD
400
2.0
1.8
1.6
1.4
1.2
1.0
Pulsed
100
I
D
=250uA
T
a
=25
℃
T
a
=100
℃
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
25
50
75
100
125
SOURCE TO DRAIN VOLTAGE
V
(V)
JUNCTION TEMPERATURE
T
(
℃
)
SD
j
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Rev.01
Page 3
of
4
