HUXN-MMBT491A
| Part # | HUXN-MMBT491A |
Download  | HUXN-MMBT491A |
MMBT491A
NPN Silicon Epitaxial Planar Transistor
MARKING:
491A
1.Base 2.Emitter
3.Collector
SOT-23 Plastic Package
O
Absolute Maximum Ratings
(T
a
= 25
C)
Parameter
Symbol
Value
Unit
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
V
CBO
V
CEO
V
EBO
I
C
40
V
V
40
5
V
1
A
Peak Pulse Current
I
CM
2
200
A
Power Dissipation
P
tot
T
J
mW
O
C
Junction
T
e
mperature
Storage
T
e
mperature Range
150
O
C
T
S
– 55 to + 150
ELECTRICAL CHARACTERISTICS at Ta = 25
°
C
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at V
CE
= 5
V
,
I
C
= 1 mA
at V
CE
= 5
V
,
I
C
= 500 mA
at V
CE
= 5
V
,
I
C
= 1 A
h
FE
h
FE
h
FE
300
300
200
–
900
–
–
–
–
Collector Base Cutoff Current
at V
CB
= 30 V
I
CBO
I
CES
I
EBO
–
–
–
100
100
100
nA
nA
nA
Collector Emitter Cutoff Current
at V
CE
= 30 V
Emitter Base Cutoff Current
at V
EB
= 4 V
Collector Emitter Saturation Voltage
at I
C
= 500 mA, I
B
= 50 mA
at I
C
= 1 A, I
B
= 100 mA
V
CEsat
–
–
0.3
0.5
V
Base Emitter Saturation Voltage
at I
C
= 1 A, I
B
= 100 mA
Base Emitter Voltage
at I
C
= 1 A, V
CE
= 5 V
V
BEsat
V
BE
C
ob
f
T
–
1.2
1.1
10
–
V
V
–
–
Collector Output Capacitance
at V
CB
= 10
V
, f = 1
M
Hz
pF
Gain Bandwidth Product
at V
CE
= 10
V
, I
C
= 50 mA, f = 100 MHz
150
MHz
+86-769-22857832
Rev.
1.0
Page
1
of
3
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT-23
+86-769-22857832
Rev.
1.0
Page
3
of
3
