HX-hengjiaxing-HX2301
| Part # | HX-hengjiaxing-HX2301 |
Download  | HX-hengjiaxing-HX2301 |
SO
T
–
23 -3Plastic-Encapsulate Transistors
HX230
1
MOSFET(P-Channel)
FEATURES
TrenchFET Power MOSFET
MARKING: A1SHB
MAXIMUM RATINGS
(TA=25
℃
unless otherwise noted)
Symbol
Parameter
Value
-20
Units
V
DS
Drain-Source voltage
Gate-Source voltage
Drain current
V
V
GS
I
D
±12
-2.8
V
A
P
D
Power Dissipation
Junction Temperature
Storage Temperature
1
W
℃
℃
Tj
150
Tstg
-55-150
ELECTRICAL CHARACTERISTICS
(Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)DSS
Vth
(GS)
I
GSS
Test conditions
V
GS
=0V,I
D
=-250uA
V
DS
= V
GS,
I
D
=-250 uA
V
DS
=0V, V
GS
=
±
12V
V
DS
=-20V, V
GS
=
0
V
V
GS
=-
4.5
V, I
D
=-2.8A
V
GS
=-
2.5
V, I
D
=-2A
V
DS
=
-5
V, I
D
=-5A
MIN
-20
TYP
MAX
UNIT
V
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
-0.4
-0.7
-1.2
±100
-1
V
Gate-body Leakage
nA
Zero Gate Voltage Drain Current
I
DSS
uA
mΩ
mΩ
S
55
60
5
85
Drain-Source On-Resistance
r
DS(ON)
gfs
110
Forward Trans conductance
Dynamic Characteristics
Input Capacitance
Ciss
Coss
Crss
560
61
V
DS
=-
10
V, V
GS
=
0
V,
f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Capacitance
Turn-on Delay Time
55
t
d(on)
t
r
11
6.6
113
46
nS
nS
nS
nS
2.8A
V
DD
=-
10
V, I
D
=
–
,
Turn-on Rise Time
V
GS
=-
4.5
V
R
GEN
=-60ohm
R
L
=10ohm
Turn-off Delay Time
t
d(off)
t
f
Turn-off Fall Time
Total Gate Charge
Q
g
6.1
1.7
1.3
nC
nC
nC
V
DS
=-
10
V, I
D
=
-3A
,
V
GS
=-
4.5V
,
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
Drain-Source Diode Characteristics
Diode Forward Voltage
V
SD
Is
V
GS
=0
V
, I
D
=-
1.3A
-1.2
-1.3
V
A
Diode Forward Current
1
