HX-hengjiaxing-HX3400
| Part # | HX-hengjiaxing-HX3400 |
Download  | HX-hengjiaxing-HX3400 |
SO
T
–
23-3 Plastic-Encapsulate Transistors
HX3400
MOSFET(N-Channel)
FEATURES
High Power and current handing capability
Lead free product is acquired
Surface Mout Package
MARKING:
XORB
MAXIMUM RATINGS
(TA=25
℃
unless otherwise noted)
Symbol
Parameter
Value
30
Units
V
DS
Drain-Source voltage
Gate-Source voltage
Drain current
V
V
GS
I
D
±12
V
5.8
A
P
D
Power Dissipation
Junction Temperature
Storage Temperature
1.4
W
℃
℃
Tj
-55-150
-55-150
Tstg
ELECTRICAL CHARACTERISTICS
(Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)DSS
Vth
(GS)
I
GSS
Test conditions
V
GS
=0V,I
D
=250uA
V
DS
= V
GS,
I
D
=250 uA
V
DS
=0V, V
GS
=
±
12V
V
DS
=30V, V
GS
=
0
V
V
GS
=
2.5
V, I
D
=4A
V
GS
=4
.5
V, I
D
=5A
V
GS
=10V, I
D
=5.8A
MIN
30
TYP
MAX
UNIT
V
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
0.7
1.0
1.4
±100
1
V
Gate-body Leakage
nA
Zero Gate Voltage Drain Current
I
DSS
uA
mΩ
mΩ
mΩ
s
43
28
24
54
Drain-Source On-Resistance
R
DS(ON)
35
39
Forward Trans conductance
Dynamic Characteristics
Input Capacitance
gfs
V
DS
=
5
V, I
D
10
=5A
Ciss
Coss
Crss
823
99
V
DS
=
15
V, V
GS
=
0
V,
f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Switching Capacitance
Turn-on Delay Time
77
t
d(on)
t
r
3.3
4.8
26
4
nS
nS
nS
nS
nC
nC
nC
V
DD
=
15
V, I
D
=
2.9A
,
V
GS
=
10
V
R
GEN
=3
Ω
Turn-on Rise Time
Turn-off Delay Time
t
d(off)
t
f
R
GEN
=2.
7
Ω
Turn-off Fall Time
Total Gate Charge
Q
g
9.5
1.5
3
V
DS
=
15
V, I
D
=
5.8A
,
V
GS
=
4.5V
,
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
Drain-Source Diode Characteristics
Diode Forward Voltage
V
SD
Is
V
GS
=0
V
, I
D
=
1A
0.71
1.0
2.5
V
A
Diode Forward Current
1
