HXY-MOSFET-2N7002-HXY
| Part # | HXY-MOSFET-2N7002-HXY |
Download  | HXY-MOSFET-2N7002-HXY |
HUAXUANYANG
HXY
2N7002-HXY
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Description
The
2N7002-HX
Y
uses advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 4.5
V
. This
device is suitable for use as a
D
S
G
SOT-23
Battery protection or in other Switching application.
D
General Features
!
“
V
DS
= 60V
I
D
=0.3A
! ”
“
!
G
“
R
DS(ON)
< 2Ω @ V
GS
=10V
!
S
ESD Rating
：
HBM
≥
2000V
N-Channel MOSFET
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
SOT-23
72
K
/7002
3000
2N7002-HXY
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Limit
60
Unit
V
Drain-Source Voltage
Gate-Source Voltage
V
DS
±20
V
V
GS
0.3
T
A
=25
℃
Continuous Drain Current (T
J
=150
℃
)
A
I
D
0.19
T
A
=100
℃
Drain Current-Pulsed
(Note 1)
Maximum Power Dissipation
0.8
A
W
I
DM
0.35
P
D
Operating Junction and Storage
T
e
mperature Range
Thermal Resistance,Junction-to-Ambient
(Note 2)
-55
T
o
1
50
350
℃
T
J
,T
STG
R
θJA
℃
/W
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
2N7002-HXY
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Symbol
BV
DSS
I
DSS
Condition
Min Typ
Max Unit
V
GS
=0V I
D
=250μA
V
DS
=60
V
,
V
GS
=0V
60
–
68
–
–
V
1
μA
I
GSS
V
GS
=±10
V
,
V
DS
=0V
V
GS
=±20
V
,
V
DS
=0V
–
–
±100 ±500
nA
uA
±4
1.2
1.3
1
±10
1.9
3
Gate Threshold Voltage
V
GS(th)
V
DS
=V
GS
,I
D
=250μA
V
GS
=5
V
,
I
D
=0.1A
V
GS
=10
V
,
I
D
=0.1A
V
DS
=10
V
,
I
D
=0.2A
0.7
V
Ω
–
Drain-Source On-State Resistance
R
DS(ON)
–
2
Ω
Forward Transconductance
Input Capacitance
g
FS
C
lss
C
oss
C
rss
t
d(on)
t
r
0.1
–
–
S
–
–
–
–
–
–
–
21
11
4.2
10
50
17
10
50
25
5
PF
PF
PF
nS
nS
nS
nS
V
DS
=25
V
,
V
GS
=0
V
,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
–
–
V
DD
=30
V
,
I
D
=0.2A
V
GS
=10
V
,
R
GEN
=10Ω
Turn-Off Delay Time
Turn-Off Fall Time
t
d(off)
t
f
–
–
V
DS
=10
V
,
I
D
=0.3A,
V
GS
=4.5V
T
o
tal Gate Charge
Q
g
–
1.7
3
nC
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
V
SD
V
GS
=0
V
,
I
S
=0.2A
–
–
–
–
1.2
0.3
V
A
I
S
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse
T
e
st: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4.
Guaranteed by design, not subject to production
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
2N7002-HXY
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
2N7002-HXY
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Qg Gate Charge (nC)
Vs
Source-Drain Voltage (V)
Figure 7 Gate Charge
Figure 8
ource-DrainDiode Forward
℃
T
J
-Junction
T
e
mperature
)
Vds Drain-Source Voltage (V)
Figure 9 Drain-Source On-Resistance
Figure 10
Safe Operation Area
Vds Drain-Source Voltage (V)
Figure 11 Capacitance vs Vds
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
2N7002-HXY
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Square Wave Pluse Duration(sec)
Figure 12 Normalized Maximum Transient Thermal Impedance
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
2N7002-HXY
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
SO
T
-23 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
SO
T
-23 Suggested Pad Layout
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
2N7002-HXY
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Attention
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applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein.
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characteristics, and functions of the described products in the independent state, and are not guarantees of the performance,
characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and
states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the
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