HXY-MOSFET-5N10-HXY
| Part # | HXY-MOSFET-5N10-HXY |
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HUAXUANYANG
HXY
5N10-HXY
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Description
The
5N10-HXY
uses advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 4.5
V
. This
device is suitable for use as a
D
S
G
SOT-23
Battery protection or in other Switching application.
PIN2 D
General Features
!
V
DS
= 100V
I
D
=5A
“
! ”
“
“
!
PIN1 G
R
DS(ON)
< 125mΩ @ V
GS
=
10V
Application
!
PIN3 S
N-Channel MOSFET
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
5N10-HXY
SOT
–
23
MA6
3000
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
Parameter
Rating
Units
V
DS
Drain-Source Voltage
100
V
V
V
GS
Gate-Sou
r
ce Voltage
±
20
Continuous Drain Current, V
GS
@ 10V
1
5
A
A
I
D
@T
A
=25
℃
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
3.2
16
I
D
@T
A
=70
℃
I
DM
A
T
o
tal Power Dissipation
3
3.1
W
P
D
@T
A
=25
℃
T
STG
Storage
T
e
mperature Range
-55 to 150
-55 to 150
100
℃
℃
T
J
Operating Junction
T
e
mperature Range
Thermal Resistance Junction-ambient(steady state)
1
R
θ
JA
℃
/W
R
θ
JA
Thermal Resistance Junction-ambient(t<10s)
1
40
℃
/W
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
5N10-HXY
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
100
—
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
108
110
120
1.7
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
V
GS
=10V , I
D
=4A
125
145
2.5
1
mΩ
mΩ
V
R
DS(ON)
V
GS(th)
I
DSS
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
V
GS
=4.5V , I
D
=2A
V
GS
=V
DS
, I
D
=250uA
V
DS
=80V , V
GS
=0V , T
J
=25
℃
V
DS
=80V , V
GS
=0V , T
J
=85
℃
V
GS
=
±
20V , V
DS
=0V
Drain-Source Leakage Current
uA
nA
—
50
±
100
4.6
—
I
GSS
R
g
Gate-Source Leakage Current
Gate Resistance
—
V
DS
=0V , V
GS
=0V , f=1MHz
2.3
3.57
0.76
0.71
11
Q
g
T
o
tal Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q
gs
Q
gd
T
d(on)
T
r
V
DS
=30V , V
GS
=10V , I
D
=4A
—
nC
ns
—
—
V
DD
=30V , V
GS
=10V ,
R
G
=3.3
6
—
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
30
—
I
D
=1A
4
—
C
iss
C
oss
C
rss
I
S
Input Capacitance
182
30
—
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
1,4
Diode Forward Voltage
2
—
V
DS
=50V , V
GS
=0V , f=1MHz
pF
3.6
—
—
V
G
=V
D
=0V , Force Current
2
A
V
V
SD
—
1.2
V
GS
=0V , I
S
=1A , T
J
=25
℃
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
5N10-HXY
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Typical Characteristics
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs G-S Voltage
12
10
8
6
T
J
=150
℃
T
J
=25
℃
4
2
0
0
0.3
0.6
0.9
1.2
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Source Drain Forward Characteristics
Fig.4 Gate-Charge Characteristics
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
T
J
,Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs T
J
Fig.6 Normalized R
DSON
vs T
J
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
5N10-HXY
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.01
P
DM
T
ON
0.01
T
D =
T
ON
/T
SINGLE
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
V
DS
90%
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
Fig.11 Gate Charge Waveform
Fig.10 Switching Time Waveform
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
5N10-HXY
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
SO
T
-23 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
SO
T
-23 Suggested Pad Layout
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
5N10-HXY
ELECTRONICS CO.,LTD
N-Channel Enhancement Mode MOSFET
Attention
■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein.
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characteristics, and functions of the described products in the independent state, and are not guarantees of the performance,
characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and
states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the
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