HXY-MOSFET-AO4459-HXY
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HUAXUANYANG
HXY
AO4459
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Description
The AO4459 uses advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5
V
. This
device is suitable for use as a
D
D
D
D
G
S
Battery protection or in other Switching application.
S
S
General Features
SOP-8
V
DS
=-30V I
D
= -5.8A
D
R
DS(ON)
< 5
5
m
Ω @ V
GS
=10V
Application
G
Battery protection
S
P-Channel MOSFET
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
9435 XXX
YYYY
Qty(PCS)
AO4459
SOP-8
3000
Absolute Maximum Ratings
(Tc=25
℃
unless otherwise noted )
Symbol Parameter
Rating
Units
V
DS
Drain-Source Voltage
Gate-Source Voltage
– 30
V
V
A
±20
VGS
Drain Current
3
, V
GS
@ 10V
-5.8
I
D
@T
A
=25
℃
IDM
Pulsed Drain Current
1
T
o
tal Power Dissipation
-20
2.5
A
W
P
D
@T
A
=25
℃
Linear Derating Factor
0.02
W/
℃
Storage
T
e
mperature Range
-55 to 150
-55 to 150
50
℃
℃
TSTG
T
J
Operating Junction
T
e
mperature Range
Maximum Thermal Resistance, Junction-ambient
3
Rthj-a
℃
/W
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AO4459
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min Typ
Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics
(Note 3)
BV
DSS
I
DSS
V
GS
=0V I
D
=-250
μ
A
V
DS
=-24V,V
GS
=0V
V
GS
=±20V,V
DS
=0V
-30
-33
–
V
–
–
–
–
-1
μ
A
nA
I
GSS
±100
Gate Threshold Voltage
V
GS
(
t
h)
V
DS
=V
GS
,I
D
=-250
μ
A
V
GS
=-10V, I
D
=-5.1A
V
GS
=-4.5V, I
D
=-4.2A
-1
–
-1.6
43
-3
55
90
V
m
Ω
m
Ω
Drain-Source On-State Resistance
R
DS
(
O
N
)
g
FS
–
62
Forward Transconductance
V
DS
=-15V,I
D
=-4.5A
4
7
–
S
Dynamic Characteristics
(Note4)
Input Capacitance
C
lss
C
oss
C
rss
–
–
–
520
130
70
–
–
–
PF
PF
PF
V
DS
=-15V,V
GS
=0V,
F=1.0MHz
Output Capacitance
Reverse
T
ransfer Capacitance
Switching Characteristics
(Note 4)
Turn-on Delay
T
i
me
Turn-on Rise Time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
–
–
–
7
13
14
9
–
–
–
–
–
–
–
nS
nS
nS
nS
nC
nC
nC
V
DD
=-15V, ID=-1A, V
GS
=-
10V,R
GEN
=6
Ω
Turn-Off Delay
T
i
me
Turn-Off Fall Time
T
o
tal Gate Charge
Q
g
11
2.2
3
V
DS
=-15V,I
D
=-5.1A,V
GS
=-
10V
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
Drain-Source Diode Characteristics
Diode Forward Voltage
(
N
o
te 3)
V
SD
V
GS
=0V,I
S
=-5.1A
–
–
-1.2
V
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse
T
e
st: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AO4459
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Typical Electrical and Thermal Characteristics
t
on
t
off
t
f
t
r
t
d(on)
V
OUT
V
IN
t
d(off)
90%
90%
INVERTED
10%
90%
10%
50%
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction
T
e
mperature(
℃
)
T
J
-Junction
T
e
mperature(
℃
)
Figure 3 Power Dissipation
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
I
D
– Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AO4459
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Figure 5 Output Characteristics
℃
T
J
-Junction Temperature(
)
Vgs Gate-Source Voltage (V)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Vs
Source-Drain
V
oltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AO4459
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AO4459
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
SO
P-8
Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Sy
m
bo l
M
i
n
1.350
0.100
1.
3
50
0.330
0.170
4.800
Max
1.
7
50
0.250
1.5
5
0
0.510
0.250
5.000
M
i
n
0.053
0.004
0.0
53
0.013
0.007
0.189
Max
0.069
0.010
0.0
61
0.020
0.010
0.197
A
A1
A2
b
c
D
e
1.270（BSC）
0.050（BSC）
E
5.800
3.800
0.400
0°
6.200
4.000
1.270
8°
0.228
0.150
0.016
0°
0.244
0.157
0.050
8°
E1
L
θ
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AO4459
ELECTRONICS CO.,LTD
P-Channel Enhancement Mode MOSFET
Attention
■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG
ELECTRONICS representative nearest you before using any HUA XUAN YANG ELECTRONICS products described or contained herein
in such applications.
■ HUA XUAN YANG ELECTRONICS assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein.
■ Specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the performance,
characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and
states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the
customer’s products or equipment.
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products fail with some probability. It is possible that these probabilistic failures could
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