HXY-MOSFET-AO4606-HXY
| Part # | HXY-MOSFET-AO4606-HXY |
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HUAXUANYANG
HXY
AO4606-HXY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
Description
The AO4606-HXY uses advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 4.5
V
. This
device is suitable for use as a
D2
D2
D1
D1
G2
S2
G1
S1
Battery protection or in other Switching application.
SOP-8
General Features
V
DS
= 30V
I
D
=6A
R
DS(ON)
< 30mΩ @ V
GS
=10V
V
DS
= -30V
I
D
=-5.5A
D1
S1
D1 D2
D2
G2
R
DS(ON)
< 48
mΩ @ V
GS
=-10V
Application
G1 S2
Wireless charging
N-Channel and
P-Channel
Boost driver
Brushless motor
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AO4606-HXY
SOP-8
4606 XXXX
3000
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Rating
Symbol
Parameter
Units
N-Channel
P-Channel
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
30
-30
±20
V
V
±20
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
IDM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
6
-5.5
A
5
-4.3
A
30
-30
A
EAS
Single Pulse Avalanche Energy
3
T
o
tal Power Dissipation
4
5
26
mJ
W
P
D
@T
A
=25
℃
TSTG
2
2
Storage
T
e
mperature Range
-55 to 150
-55 to 150
-55 to 150
-55 to 150
℃
T
J
Operating Junction
T
e
mperature Range
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
℃
R
θ
JA
62.5
40
℃
/W
℃
/W
R
θ
JC
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AO4606-HXY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
N-Channel Electrical Characteristics (TJ =25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
I
D
=250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
30
V
V
DS
=30V, V
GS
=0V
1
5
I
DSS
Zero Gate Voltage Drain Current
µ
A
T
J
=55
°
C
I
GSS
V
DS
=0V, V
GS
=±20V
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
2.4
nA
V
V
GS(th)
I
D(ON)
V
DS
=V
GS
I
D
=250
µ
A
1.2
30
1.8
V
GS
=10V, V
DS
=5V
A
V
GS
=10V, I
D
=6A
2
0
40
30
48
42
m
Ω
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125
°
C
V
GS
=4.5V, I
D
=5A
V
DS
=5V, I
D
=6A
I
S
=1A,V
GS
=0V
33.5
15
m
Ω
S
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
0.76
1
V
Maximum Body-Diode Continuous Current
2.5
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
200
30
255
45
310
60
pF
pF
pF
Ω
V
GS
=0V, V
DS
=15V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
20
35
50
V
GS
=0V, V
DS
=0V, f=1MHz
1.6
3.25
4.9
SWITCHING PARAMETERS
Q
g
(10V) Total
Gate Charge
Q
g
(4.5V) Total
Gate Charge
4
2
5.2
2.55
0.85
1.3
6
3
nC
nC
nC
nC
ns
V
GS
=10V, V
DS
=15V, I
D
=6A
Q
gs
Q
gd
t
D(on)
t
r
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
4.5
Turn-On Rise Time
V
GS
=10V, V
DS
=15V, R
L
=2.5
Ω
,
GEN
2.5
ns
t
D(off)
t
f
Turn-Off DelayTime
14.5
3.5
ns
Turn-Off Fall Time
ns
t
rr
I
F
=6A, dI/dt=100A/
µ
s
I
F
=6A, dI/dt=100A/
µ
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
8.5
12
3
ns
Q
rr
nC
2.2
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The
value in any given application depends on the user’s specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using
≤
10s junction-to-ambient thermal resistance.
C. Repetitive
rating, pulse width limited by junction temperature T
J(MAX)
=150
°
C. Ratings are based on low frequency and duty cycles to keep
initialT
J
=25
°
C.
D. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150
°
C. The SOA curve provides a single pulse rating.
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AO4606-HXY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
30
25
20
15
10
5
15
12
9
10V
V
DS
=5V
4.5V
7V
4V
3.5V
6
125
°
C
3
25
°
C
V
GS
=3V
0
0
0
1
2
3
4
5
1
1.5
2
2.5
3
3.5
4
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
45
2
V
GS
=4.5V
I
D
=6A
1.8
1.6
1.4
1.2
1
40
35
30
25
20
V
GS
=4.5V
V
GS
=10V
I
D
=8A
V
GS
=10V
0.8
0
3
6
9
12
15
0
25
50
75
100
125
150
175
I
D
(A)
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
100
80
1.0E+02
1.0E+01
I
D
=6A
1.0E+00
125
°
C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
60
125
°
C
25
°
C
25
°
C
40
20
0
2
4
6
8
10
0.0
0.2
0.4
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AO4606-HXY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
10
8
500
400
300
200
100
0
V
DS
=15V
I
D
=6A
C
iss
6
4
C
oss
2
C
rss
0
0
5
10
15
20
25
30
0
2
4
6
V
DS
(Volts)
Q
g
(nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100.0
10.0
1.0
1000
100
10
T
A
=25
°
C
10
µ
s
R
DS(ON)
limited
100
µ
s
1ms
10ms
0.1
T
J(Max)
=150
°
C
T
A
=25
°
C
10s
DC
1
0.0
0.00001
0.001
0.1
10
1000
0.01
0.1
1
10
100
V
DS
(Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note F)
Safe Operating Area (Note F)
10
In descending order
D=T
on
/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=90
°
C/W
1
0.1
P
D
0.01
T
on
T
0.001
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
1000
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AO4606-HXY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+
Qgs
Qgd
Vds
VDC
–
–
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
10%
+
DUT
Vdd
Vgs
Rg
VDC
–
Vgs
Vgs
t
d(on)
t
r
t
d(off)
t
f
t
on
t
off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
E
AR
= 1/2 L
I
A
2
R
B
V
DSS
Vds
Id
Vds
+
Vgs
Vdd
I
AR
Vgs
VDC
Id
Rg
–
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
Isd
I
F
Isd
Vgs
dI/dt
I
RM
+
Vdd
VDC
Vdd
–
Vds
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AO4606-HXY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
P-Channel Electrical Characteristics (TJ =25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
I
D
=-250
µ
A, V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
-30
V
V
DS
=-30V, V
GS
=0V
-1
-5
I
DSS
Zero Gate Voltage Drain Current
µ
A
T
J
=55
°
C
V
DS
=0V, V
GS
=±20V
I
GSS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
±100
-2.4
nA
V
V
GS(th)
I
D(ON)
V
V
V
DS
=V
GS
I
D
=-250
µ
A
GS
=-10V, V
DS
=-5V
GS
=-10V, I
D
=-6.5A
-1.3
-30
-1.85
A
40
32
48
40
44
m
Ω
R
DS(ON)
Static Drain-Source On-Resistance
T
J
=125
°
C
V
V
GS
=-4.5V, I
D
=-5A
DS
=-5V, I
D
=-6.5A
34
m
Ω
S
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
18
I
S
=-1A,V
GS
=0V
-0.8
-1
V
Maximum Body-Diode Continuous Current
-2.5
A
DYNAMIC PARAMETERS
C
iss
C
oss
C
rss
R
g
Input Capacitance
760
140
95
pF
pF
pF
Ω
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
1.5
3.2
5
SWITCHING PARAMETERS
Q
g
(10V) Total
Gate Charge
Q
g
(4.5V) Total
Gate Charge
13.6
6.7
2.5
3.2
8
16
8
nC
nC
nC
nC
ns
V
GS
=10V, V
DS
=-15V, I
D
=-6.5A
Q
gs
Q
gd
t
D(on)
t
r
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
V
GS
=10V, V
DS
=-15V, R
L
=2.3
Ω
,
GEN
6
ns
t
D(off)
t
f
Turn-Off DelayTime
17
5
ns
Turn-Off Fall Time
ns
t
rr
I
F
=-6.5A, dI/dt=100A/
µ
s
I
F
=-6.5A, dI/dt=100A/
µ
s
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
15
9.7
ns
Q
rr
nC
A. The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25
°
C. The
value in any given application depends on the user’s specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using
≤
10s junction-to-ambient thermal resistance.
C. Repetitive
rating, pulse width limited by junction temperature T
J(MAX)
=150
°
C. Ratings are based on low frequency and duty cycles to keep
initialT
J
=25
°
C.
D. The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µ
s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150
°
C. The SOA curve provides a single pulse rating.
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AO4606-HXY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
40
30
20
10
0
40
30
20
10
0
V
DS
=-5V
-10V
-5V
-4.5V
-4V
125
°
C
-3.5V
25
°
C
V
GS
=-3V
0
1
2
3
4
5
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
45
1.8
1.6
1.4
1.2
1
V
GS
=-4.5V
40
35
30
25
20
15
10
V
GS
=-10V
I
D
=-6.5A
=-4.5
V
I
D
=-5A
V
GS
V
GS
=-10V
0.8
0
5
10
15
20
0
25
50
75
100
125
150
175
-I
D
(A)
Temperature (
°
C
)
Figure 4: On-Resistance vs. Junctio
n
Temperature
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
(Note E)
90
1.0E+02
1.0E+01
I
D
=-6.5A
70
50
30
10
1.0E+00
125
°
C
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125
°
C
25
°
C
25
°
C
2
4
6
8
10
0.0
0.2
0.4
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.6
0.8
1.0
1.2
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AO4606-HXY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
10
1200
1000
800
600
400
200
0
V
DS
=-15V
I
D
=-6.5A
8
6
4
2
0
C
iss
C
oss
C
rss
0
5
10
15
20
25
30
0
3
6
9
12
15
-V
DS
(Volts)
Q
g
(nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
1000
100
10
100.0
10.0
1.0
T
A
=25
°
C
10
µ
s
R
DS(ON)
limited
100
µ
s
1ms
10ms
0.1
DC
T
J(Max)
=150
°
C
T
A
=25
°
C
10s
0.0
1
0.01
0.1
1
10
100
0.00001
0.001
0.1
10
1000
-V
DS
(Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note F)
10
D=T
on
/T
In descending order
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
R
θ
JA
=90
°
C/W
0.1
P
D
0.01
T
on
T
0.001
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.1
1
10
100
1000
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AO4606-HXY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
Gate Charge Test Circuit & Waveform
Vgs
Qg
–
-10V
–
VDC
Qgs
Qgd
+
Vds
VDC
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
t
off
t
on
t
t
d(off)
t
d(on)
t
r
f
Vgs
–
90%
10%
DUT
Vdd
Vgs
Rg
VDC
+
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
E
AR
= 1/2 LI
A
2
R
L
Vds
Vds
Id
–
BV
DSS
Vgs
Vdd
Vgs
Rg
VDC
+
Id
I
AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q
rr
= –
Idt
Vds +
Vds –
Ig
DUT
Vgs
t
rr
L
-Isd
-I
F
Isd
Vgs
dI/dt
-I
RM
+
Vdd
VDC
Vdd
–
-Vds
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AO4606-HXY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
SO
P-8
Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Sy
m
bo l
M
i
n
1.350
0.100
1.
3
50
0.330
0.170
4.800
Max
1.
7
50
0.250
1.5
5
0
0.510
0.250
5.000
M
i
n
0.053
0.004
0.0
53
0.013
0.007
0.189
Max
0.069
0.010
0.0
61
0.020
0.010
0.197
A
A1
A2
b
c
D
e
1.270（BSC）
0.050（BSC）
E
5.800
3.800
0.400
0°
6.200
4.000
1.270
8°
0.228
0.150
0.016
0°
0.244
0.157
0.050
8°
E1
L
θ
Shenzhen HuaXuanYang Electronics CO.,LTD
HUAXUANYANG
HXY
AO4606-HXY
ELECTRONICS CO.,LTD
Dual N+P-Channel Enhancement Mode MOSFET
Attention
■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications
whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your HUA XUAN YANG
ELECTRONICS representative nearest you before using any HUA XUAN YANG ELECTRONICS products described or contained herein
in such applications.
■ HUA XUAN YANG ELECTRONICS assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products
specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein.
■ Specifications of any and all HUA XUAN YANG ELECTRONICS products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the performance,
characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and
states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the
customer’s products or equipment.
■ HUA XUAN YANG ELECTRONICS CO.,LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other
property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures
include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design.
■ In the event that any or all HUA XUAN YANG ELECTRONICS products(including technical data, services) described or contained herein
are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the
export license from the authorities concerned in accordance with the above law.
■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including
photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of HUA
XUAN YANG ELECTRONICS CO.,LTD.
■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production.
HUA XUAN YANG ELECTRONICS believes information herein is accurate and reliable, but no guarantees are made or implied regarding
its use or any infringements of intellectual property rights or other rights of third parties.
■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc.
When designing equipment, refer to the “Delivery Specification” for the HUA XUAN YANG ELECTRONICS product that you intend to use.
Shenzhen HuaXuanYang Electronics CO.,LTD
